| Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers JW Tomm, M Ziegler, M Hempel, T Elsaesser Laser & Photonics Reviews 5 (3), 422-441, 2011 | 139 | 2011 |
| Photoluminescence properties of ZnGa2O4:Mn powder phosphors TK Tran, W Park, JW Tomm, BK Wagner, SM Jacobsen, CJ Summers, ... Journal of applied physics 78 (9), 5691-5695, 1995 | 110 | 1995 |
| Fast recombination processes in lead chalcogenide semiconductors studied via transient optical nonlinearities R Klann, T Höfer, R Buhleier, T Elsaesser, JW Tomm Journal of applied physics 77 (1), 277-286, 1995 | 88 | 1995 |
| Origin of Band-Tail and Deep-Donor States in Cu2ZnSnS4 Solar Cells and Their Suppression through Sn-Poor Composition S Ma, H Li, J Hong, H Wang, X Lu, Y Chen, L Sun, F Yue, JW Tomm, ... The journal of physical chemistry letters 10 (24), 7929-7936, 2019 | 84 | 2019 |
| Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers F Rinner, J Rogg, MT Kelemen, M Mikulla, G Weimann, JW Tomm, ... Journal of applied physics 93 (3), 1848-1850, 2003 | 84 | 2003 |
| Interdot carrier transfer in asymmetric bilayer InAs∕ GaAs quantum dot structures YI Mazur, ZM Wang, GG Tarasov, M Xiao, GJ Salamo, JW Tomm, ... Applied Physics Letters 86 (6), 2005 | 83 | 2005 |
| InP quantum dots embedded in GaP: Optical properties and carrier dynamics F Hatami, WT Masselink, L Schrottke, JW Tomm, V Talalaev, C Kristukat, ... Physical Review B 67 (8), 085306, 2003 | 74 | 2003 |
| Carrier transfer in self-assembled coupled InAs/GaAs quantum dots GG Tarasov, YI Mazur, ZY Zhuchenko, A Maaßdorf, D Nickel, JW Tomm, ... Journal of Applied Physics 88 (12), 7162-7170, 2000 | 74 | 2000 |
| Transient luminescence of dense InAs/GaAs quantum dot arrays JW Tomm, T Elsaesser, YI Mazur, H Kissel, GG Tarasov, ZY Zhuchenko, ... Physical Review B 67 (4), 045326, 2003 | 71 | 2003 |
| Quantum-Well Laser Array Packaging: Nanoscale Pckaging Techniques JW Tomm, J Jimenez McGraw Hill Professional, 2007 | 65 | 2007 |
| High-power broad-area diode lasers and laser bars G Erbert, A Bärwolff, J Sebastian, J Tomm High-Power Diode Lasers: Fundamentals, Technology, Applications: With …, 2000 | 65 | 2000 |
| Transient thermal behavior of high power diode laser arrays R Puchert, A Barwolff, M Voß, U Menzel, JW Tomm, J Luft IEEE Transactions on Components and Packaging Technologies 23 (1), 95-100, 2000 | 62 | 2000 |
| Optical and photoelectrical properties of oriented ZnO films JW Tomm, B Ullrich, XG Qiu, Y Segawa, A Ohtomo, M Kawasaki, ... Journal of Applied Physics 87 (4), 1844-1848, 2000 | 59 | 2000 |
| Transient thermal properties of high-power diode laser bars M Ziegler, F Weik, JW Tomm, T Elsaesser, W Nakwaski, RP Sarzała, ... Applied physics letters 89 (26), 2006 | 56 | 2006 |
| Complementary thermoreflectance and micro-Raman analysis of facet temperatures of diode lasers TJ Ochalski, D Pierścińska, K Pierściński, M Bugajski, JW Tomm, ... Applied physics letters 89 (7), 2006 | 56 | 2006 |
| The dielectric function of PbS quantum dots in a glass matrix I Moreels, D Kruschke, P Glas, JW Tomm Optical Materials Express 2 (5), 496-500, 2012 | 55 | 2012 |
| Defect evolution during catastrophic optical damage of diode lasers M Hempel, F La Mattina, JW Tomm, U Zeimer, R Broennimann, ... Semiconductor Science and Technology 26 (7), 075020, 2011 | 55 | 2011 |
| Analysis of thermal images from diode lasers: Temperature profiling and reliability screening A Kozlowska, M Latoszek, JW Tomm, F Weik, T Elsaesser, M Zbroszczyk, ... Applied Physics Letters 86 (20), 2005 | 55 | 2005 |
| Simultaneous quantification of strain and defects in high-power diode laser devices JW Tomm, A Gerhardt, T Elsaesser, D Lorenzen, P Hennig Applied physics letters 81 (17), 3269-3271, 2002 | 55 | 2002 |
| Optical near‐field photocurrent spectroscopy: A new technique for analyzing microscopic aging processes in optoelectronic devices A Richter, JW Tomm, C Lienau, J Luft Applied physics letters 69 (26), 3981-3983, 1996 | 55 | 1996 |
Thomas ElsaesserMax Born Institute, Berlin, GermanyPotvrđena adresa e-pošte na mbi-berlin.de