Max Shatalov

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Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicPotvrđena adresa e-pošte na rpi.edu
Grigory SiminUniversity of South CarolinaPotvrđena adresa e-pošte na engr.sc.edu
Mikhail GaevskiCVD Equipment CorporationPotvrđena adresa e-pošte na CVDEquipment.com
Craig MoeAkoustis TechnologiesPotvrđena adresa e-pošte na akoustis.com
Juras MickeviciusVilnius UniversityPotvrđena adresa e-pošte na ff.vu.lt
Jonas JurkevičiusResearch fellow, Vilnius UniversityPotvrđena adresa e-pošte na ff.vu.lt
Marcinkevicius SauliusKTH Royal Institute of TechnologyPotvrđena adresa e-pošte na kth.se
Ajay SattuAutomotive Product MarketingPotvrđena adresa e-pošte na amkor.com
Joel DucosteNorth Carolina State UniversityPotvrđena adresa e-pošte na ncsu.edu
Qhalid FareedTexas InstrumentsPotvrđena adresa e-pošte na ti.com
Arunas KadysVilnius UniversityPotvrđena adresa e-pošte na ff.vu.lt
OD Simmons, IIINC State UniversityPotvrđena adresa e-pošte na ncsu.edu
Thomas M KatonaCalifornia Polytechnic State UniversityPotvrđena adresa e-pošte na calpoly.edu
Ramunas AleksiejunasVilnius UniversityPotvrđena adresa e-pošte na ff.vu.lt
Žydrūnas PodlipskasResearch fellow, Vilnius UniversityPotvrđena adresa e-pošte na ff.vu.lt
Kai LiuTAECPotvrđena adresa e-pošte na taec.toshiba.com
Matteo MeneghiniFull Professor at the University of PadovaPotvrđena adresa e-pošte na dei.unipd.it
Gaudenzio MeneghessoUniversity of Padova, Dept. of Information EngineeringPotvrđena adresa e-pošte na dei.unipd.it
Enrico ZanoniProfessor, Electronics, University of PadovaPotvrđena adresa e-pošte na dei.unipd.it
Karolis KazlauskasChief Researcher, Vilnius UniversityPotvrđena adresa e-pošte na ff.vu.lt

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Max Shatalov

CVD Equipment Corporation

Potvrđena adresa e-pošte na cvdequipment.com

compound semiconductors materials deposition


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	539	2012
III–nitride UV devices MA Khan, M Shatalov, HP Maruska, HM Wang, E Kuokstis Japanese journal of applied physics 44 (10R), 7191, 2005	535	2005
Deep Ultraviolet Light-Emitting Diodes M Shur, M Shatalov, A Dobrinsky, R Gaska GaN and ZnO-based Materials and Devices, 83-120, 2012	395	2012
Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm JP Zhang, A Chitnis, V Adivarahan, S Wu, V Mandavilli, R Pachipulusu, ... Applied physics letters 81 (26), 4910-4912, 2002	276	2002
Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire A Chitnis, C Chen, V Adivarahan, M Shatalov, E Kuokstis, V Mandavilli, ... Applied Physics Letters 84 (18), 3663, 2004	266	2004
250nmAlGaN light-emitting diodes V Adivarahan, WH Sun, A Chitnis, M Shatalov, S Wu, HP Maruska, ... Applied physics letters 85 (12), 2175-2177, 2004	262	2004
Microbial UV fluence-response assessment using a novel UV-LED collimated beam system C Bowker, A Sain, M Shatalov, J Ducoste Water research 45 (5), 2011	244	2011
High power AlGaN ultraviolet light emitters M Shatalov, W Sun, R Jain, A Lunev, X Hu, A Dobrinsky, Y Bilenko, ... Semiconductor Science and Technology 29 (8), 084007, 2014	219	2014
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes V Adivarahan, S Wu, JP Zhang, A Chitnis, M Shatalov, V Mandavilli, ... Applied Physics Letters 84 (23), 4762-4764, 2004	214	2004
Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates JW Yang, A Lunev, G Simin, A Chitnis, M Shatalov, MA Khan, ... Applied Physics Letters 76 (3), 273-275, 2000	162	2000
Ultraviolet system for disinfection M Shur, M Shatalov, TJ Bettles, Y Bilenko, S Smetona, A Dobrinsky, ... US Patent 9,179,703, 2015	148	2015
AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA JP Zhang, X Hu, Y Bilenko, J Deng, A Lunev, MS Shur, R Gaska, ... Applied physics letters 85 (23), 5532-5534, 2004	147	2004
Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells C Chen, V Adivarahan, J Yang, M Shatalov, E Kuokstis, MA Khan Japanese journal of applied physics 42 (9A), L1039, 2003	145	2003
Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power W Sun, M Shatalov, J Deng, X Hu, J Yang, A Lunev, Y Bilenko, M Shur, ... Applied Physics Letters 96 (6), 2010	140	2010
Storage device including ultraviolet illumination M Shur, M Shatalov, TJ Bettles, Y Bilenko, S Smetona, A Dobrinsky, ... US Patent 9,034,271, 2015	131	2015
Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells V Adivarahan, A Chitnis, JP Zhang, M Shatalov, JW Yang, G Simin, ... Applied Physics Letters 79 (25), 4240-4242, 2001	130	2001
Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes R Jain, W Sun, J Yang, M Shatalov, X Hu, A Sattu, A Lunev, J Deng, ... Applied Physics Letters 93, 051113, 2008	127	2008
Storage device including target UV illumination ranges M Shur, M Shatalov, TJ Bettles, Y Bilenko, S Smetona, A Dobrinsky, ... US Patent 9,795,699, 2017	121	2017
Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes A Chitnis, JP Zhang, V Adivarahan, M Shatalov, S Wu, R Pachipulusu, ... Applied physics letters 82 (16), 2565-2567, 2003	120	2003
Sub-milliwatt power III-N light emitting diodes at 285 nm V Adivarahan, J Zhang, A Chitnis, W Shuai, J Sun, R Pachipulusu, ... Japanese journal of applied physics 41 (4B), L435, 2002	120	2002

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