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Michael A Reshchikov
Michael A Reshchikov
Professor of Physics, Virginia Commonwealth University
Potvrđena adresa e-pošte na vcu.edu - Početna stranica
Naslov
Citirano
Citirano
Godina
A comprehensive review of ZnO materials and devices
Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, ...
Journal of applied physics 98 (4), 2005
135092005
Luminescence properties of defects in GaN
MA Reshchikov, H Morkoç
Journal of applied physics 97 (6), 2005
23642005
Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
MA Reshchikov, GC Yi, BW Wessels
Physical Review B 59 (20), 13176, 1999
2921999
Yellow luminescence of gallium nitride generated by carbon defect complexes
DO Demchenko, IC Diallo, MA Reshchikov
Physical review letters 110 (8), 087404, 2013
2572013
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films
MA Reshchikov, RY Korotkov
Physical Review B 64 (11), 115205, 2001
2392001
Luminescence properties of defects in ZnO
MA Reshchikov, H Morkoc, B Nemeth, J Nause, J Xie, B Hertog, ...
Physica B: Condensed Matter 401, 358-361, 2007
2192007
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN
MA Reshchikov, DO Demchenko, A Usikov, H Helava, Y Makarov
Physical Review B 90 (23), 235203, 2014
2142014
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
P Visconti, KM Jones, MA Reshchikov, R Cingolani, H Morkoç, RJ Molnar
Applied Physics Letters 77 (22), 3532-3534, 2000
2122000
Energy band bowing parameter in alloys
F Yun, MA Reshchikov, L He, T King, H Morkoç, SW Novak, L Wei
Journal of applied physics 92 (8), 4837-4839, 2002
2092002
Green luminescence in Mg-doped GaN
MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ...
Physical Review B 90 (3), 035207, 2014
1622014
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
MA Reshchikov, F Shahedipour, RY Korotkov, BW Wessels, MP Ulmer
Journal of Applied Physics 87 (7), 3351-3354, 2000
1462000
an, V. Avrutin, S.-J. Cho, H. Morkoç
Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Do
J. Appl. Phys 98, 041301, 2005
1452005
Surface photovoltage in undoped n-type GaN
MA Reshchikov, M Foussekis, AA Baski
Journal of Applied Physics 107 (11), 2010
1362010
Measurement and analysis of photoluminescence in GaN
MA Reshchikov
Journal of applied physics 129 (12), 2021
1342021
Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors
MA Reshchikov
Journal of Applied Physics 115 (1), 2014
1192014
Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
MA Reshchikov, AA Kvasov, MF Bishop, T McMullen, A Usikov, ...
Physical Review B—Condensed Matter and Materials Physics 84 (7), 075212, 2011
1192011
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
D Huang, P Visconti, KM Jones, MA Reshchikov, F Yun, AA Baski, T King, ...
Applied Physics Letters 78 (26), 4145-4147, 2001
1152001
Two charge states of the acceptor in GaN: Evidence from photoluminescence
MA Reshchikov, M Vorobiov, DO Demchenko, Ü Özgür, H Morkoç, ...
Physical Review B 98 (12), 125207, 2018
1142018
GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces
X Gu, MA Reshchikov, A Teke, D Johnstone, H Morkoç, B Nemeth, ...
Applied physics letters 84 (13), 2268-2270, 2004
1022004
Yellow and green luminescence in a freestanding GaN template
MA Reshchikov, H Morkoç, SS Park, KY Lee
Applied Physics Letters 78 (20), 3041-3043, 2001
1022001
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