| Graphene nanoelectronics: Metrology, synthesis, properties and applications H Raza Springer Science & Business Media, 2012 | 270 | 2012 |
| Complex electrical permittivity of the monolayer molybdenum disulfide (MoS2) in near UV and visible B Mukherjee, F Tseng, D Gunlycke, KK Amara, G Eda, E Simsek Optical Materials Express 5 (2), 447-455, 2015 | 146 | 2015 |
| Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors F Tseng, D Unluer, K Holcomb, MR Stan, AW Ghosh Applied Physics Letters 94 (22), 2009 | 41 | 2009 |
| Graphene devices, interconnect and circuits—challenges and opportunities MR Stan, D Unluer, A Ghosh, F Tseng 2009 IEEE International Symposium on Circuits and Systems, 69-72, 2009 | 29 | 2009 |
| Monolithically patterned wide–narrow–wide all-graphene devices D Unluer, F Tseng, AW Ghosh, MR Stan IEEE transactions on nanotechnology 10 (5), 931-939, 2010 | 27 | 2010 |
| Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene RN Sajjad, F Tseng, KMM Habib, AW Ghosh Physical Review B 92 (20), 205408, 2015 | 16 | 2015 |
| Triangular lattice exciton model D Gunlycke, F Tseng Physical Chemistry Chemical Physics 18 (12), 8579-8586, 2016 | 13 | 2016 |
| Graphene nanoribbons: from chemistry to circuits F Tseng, D Unluer, MR Stan, AW Ghosh Graphene Nanoelectronics: Metrology, Synthesis, Properties and Applications …, 2012 | 11 | 2012 |
| Using dark states for exciton storage in transition-metal dichalcogenides F Tseng, E Simsek, D Gunlycke Journal of Physics: Condensed Matter 28 (3), 034005, 2015 | 10 | 2015 |
| Physics-based GNRFET compact model for digital circuit design D Unluer, F Tseng, AW Ghosh 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 7 | 2011 |
| Atomistic deconstruction of clear performance advantages of a monolithically patterned wide-narrow-wide all-graphene FET D Unluer, F Tseng, AW Ghosh, MR Stan, CL Brown 2009 Device Research Conference, 75-76, 2009 | 6 | 2009 |
| From low-bias mobility to high-bias current saturation: fundamental trade-offs in graphene based transistors F Tseng, AW Ghosh arXiv preprint arXiv:1003.4551, 2010 | 2 | 2010 |
| Conductance of graphene: Role of metal contact, charge puddles and differential gating RN Sajjad, F Tseng, AW Ghosh 72nd Device Research Conference, 77-78, 2014 | 1 | 2014 |
| Switching limits in nano-electronic devices L Li, D Unluer, M Kabir, F Tseng, MR Stan, AW Ghosh 10th IEEE International Conference on Nanotechnology, 15-20, 2010 | 1 | 2010 |
| Storing excitons in transition-metal dichalcogenides using dark states D Gunlycke, F Tseng, E Simsek APS March Meeting Abstracts 2016, S17. 009, 2016 | | 2016 |
| Theory and applications of strongly bound excitons in layered transition-metal dichalcogenides F Tseng, D Gunlycke, E Simsek 2015 IEEE Photonics Conference (IPC), 188-189, 2015 | | 2015 |
| Exciton physics in transition-metal dichalcogenides at the atomic scale F Tseng, E Smisek, D Gunlycke Integrated Photonics Research, Silicon and Nanophotonics, IM4A. 6, 2015 | | 2015 |
| Atomistic model for excitons: Capturing Strongly Bound Excitons in Monolayer Transition-Metal Dichalcogenides F Tseng, E Simsek, D Gunlycke APS March Meeting Abstracts 2015, T2. 005, 2015 | | 2015 |
| Tunneling through graphene and topological insulators in presence of pn junction: transport properties and device prospects R Sajjad, KM Habib, F Tseng, A Ghosh APS March Meeting Abstracts 2014, L29. 006, 2014 | | 2014 |
| Can we engineer current saturation in narrow gap graphitic FETs without hurting mobility? F Tseng, G Fiori, AW Ghosh 71st Device Research Conference, 1-2, 2013 | | 2013 |