| High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 318 | 2009 |
| VARIOT: A novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices B Govoreanu, P Blomme, M Rosmeulen, J Van Houdt, K De Meyer IEEE Electron Device Letters 24 (2), 99-101, 2003 | 245 | 2003 |
| Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018 | 160 | 2018 |
| Multibit non-volatile memory and method J Van Houdt, L Haspeslagh US Patent 6,897,517, 2005 | 140 | 2005 |
| Trap spectroscopy by charge injection and sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks R Degraeve, M Cho, B Govoreanu, B Kaczer, MB Zahid, J Van Houdt, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 118 | 2008 |
| Analytical percolation model for predicting anomalous charge loss in flash memories R Degraeve, F Schuler, B Kaczer, M Lorenzini, D Wellekens, P Hendrickx, ... IEEE Transactions on Electron Devices 51 (9), 1392-1400, 2004 | 109 | 2004 |
| Analysis of the enhanced hot-electron injection in split-gate transistors useful for EEPROM applications J Van Houdt, P Heremans, L Deferm, G Groeseneken, HE Maes IEEE transactions on Electron Devices 39 (5), 1150-1156, 1992 | 99 | 1992 |
| Scaling down the interpoly dielectric for next generation flash memory: Challenges and opportunities B Govoreanu, DP Brunco, J Van Houdt Solid-State Electronics 49 (11), 1841-1848, 2005 | 95 | 2005 |
| Understanding ferroelectric Al: HfO2 thin films with Si-based electrodes for 3D applications K Florent, S Lavizzari, M Popovici, L Di Piazza, U Celano, G Groeseneken, ... Journal of Applied Physics 121 (20), 2017 | 93 | 2017 |
| HIM0S-a high efficiency flash E/sup 2/PROM cell for embedded memory applications J Van Houdt, L Haspeslagh, D Wellekens, L Deferm, G Groeseneken, ... IEEE Transactions on Electron Devices 40 (12), 2255-2263, 1993 | 92 | 1993 |
| Low voltage low cost nitride embedded flash memory cell G Xue, J Van Houdt, D Wellekens, L Haspeslagh, P Hendrickx, J De Vos, ... | 82 | 2003 |
| Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications K Florent, S Lavizzari, L Di Piazza, M Popovici, J Duan, G Groeseneken, ... IEEE Transactions on Electron Devices 64 (10), 4091-4098, 2017 | 77 | 2017 |
| Vertical ferroelectric memory device and a method for manufacturing thereof J Van Houdt, P Blomme US Patent 10,211,223, 2019 | 74 | 2019 |
| A new 2 isolated-bits/cell flash memory device with self aligned split gate structure using ONO stacks for charge storage L Breuil, F Schuler, L Haspeslagh, D Wellekens, J De Vos, M Lorenzini, ... | 73 | 2003 |
| SILC-related effects in flash E2PROM's-Part I: a quantitative model for steady-state SILC J De Blauwe, J Van Houdt, D Wellekens, G Groeseneken, H Maes | 70 | 1998 |
| Two-Pulse – : A New Method for Characterizing Electron Traps in the Bulk of Dielectric Stacks WD Zhang, B Govoreanu, XF Zheng, DR Aguado, M Rosmeulen, ... IEEE Electron Device Letters 29 (9), 1043-1046, 2008 | 63 | 2008 |
| Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices A Maconi, A Arreghini, CM Compagnoni, AS Spinelli, J Van Houdt, ... Solid-State Electronics 74, 64-70, 2012 | 56 | 2012 |
| On the characterization and separation of trapping and ferroelectric behavior in HfZrO FET MNK Alam, B Kaczer, LÅ Ragnarsson, M Popovici, G Rzepa, N Horiguchi, ... IEEE Journal of the Electron Devices Society 7, 855-862, 2019 | 55 | 2019 |
| Contacted cell array configuration for erasable and programmable semiconductor memories JF Van Houdt, G Groeseneken, H Maes US Patent 6,243,293, 2001 | 55 | 2001 |
| An analytical model for the optimization of source-side injection flash EEPROM devices JF Van Houdt, G Groeseneken, HE Maes IEEE Transactions on Electron Devices 42 (7), 1314-1320, 1995 | 55 | 1995 |
