Randall Feenstra

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Jörg NeugebauerDirector, Max-Planck-Institut für EisenforschungPotvrđena adresa e-pošte na mpie.de
Joseph A. StroscioCenter for Nanoscale Science and Technology, National Institute of Standards and TechnologyPotvrđena adresa e-pošte na nist.gov
Nishtha SrivastavaIntel, Senior Process EngineerPotvrđena adresa e-pošte na andrew.cmu.edu
Gong Guthe University of Tennessee, KnoxvillePotvrđena adresa e-pošte na utk.edu
Jerry WoodallUC DavisPotvrđena adresa e-pošte na ucdavis.edu
Marek SkowronskiCarnegie Mellon UniversityPotvrđena adresa e-pošte na cmu.edu
Joshua A. RobinsonProf. MatSE; Center for 2DLM; ATOMIC; 2D Crystal Consort.; The Pennsylvania State UniversityPotvrđena adresa e-pošte na psu.edu
Sergio C. de la BarreraAssistant Professor, University of TorontoPotvrđena adresa e-pošte na utoronto.ca
Wendy SarneyDEVCOM Army Research LaboratoryPotvrđena adresa e-pošte na army.mil
Yifan NieLawrence Berkeley National Laboratory, Synopsys Inc.Potvrđena adresa e-pošte na lbl.gov
Yu-Chuan LinMaterials Science and Engineering, National Yang Ming Chiao Tung University (NYCU)Potvrđena adresa e-pošte na nycu.edu.tw
Bhakti JariwalaPostdoc FellowPotvrđena adresa e-pošte na psu.edu
Jun LiResearch Assistant, Physics, Carnegie Mellon UniversityPotvrđena adresa e-pošte na alumni.cmu.edu
Luxmi PuriIntel CorporationPotvrđena adresa e-pošte na intel.com
Yi Pan (潘毅）Professor , Xi'an Jiaotong UniversityPotvrđena adresa e-pošte na xjtu.edu.cn
Debdeep JenaCornell UniversityPotvrđena adresa e-pošte na cornell.edu
Michael WidomProfessor of Physics, Carnegie Mellon UniversityPotvrđena adresa e-pošte na cmu.edu
Ivan VlassioukOak Ridge National LaboratoryPotvrđena adresa e-pošte na ornl.gov
Dacen WatersUniversity of DenverPotvrđena adresa e-pošte na du.edu
Lourdes G Salamanca-RibaUniversity of MarylandPotvrđena adresa e-pošte na umd.edu

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Randall Feenstra

Professor of Physics, Carnegie Mellon University

Potvrđena adresa e-pošte na cmu.edu - Početna stranica

surfaces and interfaces semiconductor materials 2D materials


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Tunneling spectroscopy of the Si (111) 2× 1 surface RM Feenstra, JA Stroscio, AP Fein Surface science 181 (1-2), 295-306, 1987	890	1987
Electronic structure of the Si (111) 2× 1 surface by scanning-tunneling microscopy JA Stroscio, RM Feenstra, AP Fein Physical review letters 57 (20), 2579, 1986	833	1986
Atom-selective imaging of the GaAs (110) surface RM Feenstra, JA Stroscio, J Tersoff, AP Fein Physical Review Letters 58 (12), 1192, 1987	823	1987
Tunneling spectroscopy of the GaAs (110) surface RM Feenstra, JA Stroscio Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987	551	1987
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors RM Feenstra Physical Review B 50 (7), 4561, 1994	547	1994
Reconstructions of the GaN (000 1) surface AR Smith, RM Feenstra, DW Greve, J Neugebauer, JE Northrup Physical review letters 79 (20), 3934, 1997	447	1997
Structure of GaN (0001): The laterally contracted Ga bilayer model JE Northrup, J Neugebauer, RM Feenstra, AR Smith Physical Review B 61 (15), 9932, 2000	438	2000
Determination of wurtzite GaN lattice polarity based on surface reconstruction AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... Applied physics letters 72 (17), 2114-2116, 1998	413	1998
Adatom kinetics on and below the surface: The existence of a new diffusion channel J Neugebauer, TK Zywietz, M Scheffler, JE Northrup, H Chen, ... Physical Review Letters 90 (5), 056101, 2003	394	2003
Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER …, 1998	325	1998
Real-space observation of π-bonded chains and surface disorder on Si (111) 2× 1 RM Feenstra, WA Thompson, AP Fein Physical review letters 56 (6), 608, 1986	319	1986
Geometric and electronic structure of antimony on the GaAs (110) surface studied by scanning tunneling microscopy P Mårtensson, RM Feenstra Physical Review B 39 (11), 7744, 1989	293	1989
Preparation of atomically flat surfaces on silicon carbide using hydrogen etching V Ramachandran, MF Brady, AR Smith, RM Feenstra, DW Greve Journal of Electronic Materials 27 (4), 308-312, 1998	282	1998
Inversion of wurtzite GaN (0001) by exposure to magnesium V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ... Applied Physics Letters 75 (6), 808-810, 1999	278	1999
Scanning tunneling spectroscopy RM Feenstra Surface science 299, 965-979, 1994	278	1994
Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe₂ C Zhang, Y Chen, A Johnson, MY Li, LJ Li, PC Mende, RM Feenstra, ... Nano letters 15 (10), 6494-6500, 2015	265	2015
Local state density and long-range screening of adsorbed oxygen atoms on the GaAs (110) surface JA Stroscio, RM Feenstra, AP Fein Physical review letters 58 (16), 1668, 1987	264	1987
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs RM Feenstra, JM Woodall, GD Pettit Physical review letters 71 (8), 1176, 1993	261	1993
Graphene nucleation density on copper: fundamental role of background pressure I Vlassiouk, S Smirnov, M Regmi, SP Surwade, N Srivastava, R Feenstra, ... The Journal of Physical Chemistry C 117 (37), 18919-18926, 2013	259	2013
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ... Journal of applied physics 64 (10), 4843-4852, 1988	255	1988

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