| Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra Applied Physics Letters 77 (2), 250-252, 2000 | 1469 | 2000 |
| Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006 | 853 | 2006 |
| Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ... Journal of applied physics 86 (8), 4520-4526, 1999 | 624 | 1999 |
| Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy EJ Tarsa, B Heying, XH Wu, P Fini, SP DenBaars, JS Speck Journal of applied physics 82 (11), 5472-5479, 1997 | 531 | 1997 |
| Dislocation mediated surface morphology of GaN B Heying, EJ Tarsa, CR Elsass, P Fini, SP DenBaars, JS Speck Journal of Applied Physics 85 (9), 6470-6476, 1999 | 517 | 1999 |
| Electrical characterization of GaN junctions with and without threading dislocations P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ... Applied physics letters 73 (7), 975-977, 1998 | 490 | 1998 |
| High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN G Parish, S Keller, P Kozodoy, JP Ibbetson, H Marchand, PT Fini, ... Applied Physics Letters 75 (2), 247-249, 1999 | 423 | 1999 |
| High Al-content AlGaN/GaN MODFETs for ultrahigh performance YF Wu, BP Keller, P Fini, S Keller, TJ Jenkins, LT Kehias, SP Denbaars, ... IEEE Electron Device Letters 19 (2), 50-53, 1998 | 350 | 1998 |
| Technique for the growth of planar semi-polar gallium nitride TJ Baker, BA Haskell, PT Fini, SP Denbaars, JS Speck, S Nakamura US Patent 7,220,324, 2007 | 314 | 2007 |
| Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition H Marchand, XH Wu, JP Ibbetson, PT Fini, P Kozodoy, S Keller, JS Speck, ... Applied physics letters 73 (6), 747-749, 1998 | 312 | 1998 |
| Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy B Heying, I Smorchkova, C Poblenz, C Elsass, P Fini, S Den Baars, ... Applied Physics Letters 77 (18), 2885-2887, 2000 | 252 | 2000 |
| Development of the IES method for evaluating the color rendition of light sources A David, PT Fini, KW Houser, Y Ohno, MP Royer, KAG Smet, M Wei, ... Optics express 23 (12), 15888-15906, 2015 | 244 | 2015 |
| Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth SF Chichibu, H Marchand, MS Minsky, S Keller, PT Fini, JP Ibbetson, ... Applied physics letters 74 (10), 1460-1462, 1999 | 233 | 1999 |
| Defect reduction in a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy BA Haskell, F Wu, MD Craven, S Matsuda, PT Fini, T Fujii, K Fujito, ... Applied physics letters 83 (4), 644-646, 2003 | 228 | 2003 |
| Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures S Keller, G Parish, PT Fini, S Heikman, CH Chen, N Zhang, SP DenBaars, ... Journal of applied physics 86 (10), 5850-5857, 1999 | 224 | 1999 |
| Heying B, Keller S, Mishra UK, DenBaars SP, Speck JS XH Wu, P Fini, EJ Tarsa J Cryst Growth 189 (19), 231, 1998 | 203 | 1998 |
| Structural and morphological characteristics of planar a-plane gallium nitride grown by hydride vapor phase epitaxy BA Haskell, F Wu, S Matsuda, MD Craven, PT Fini, SP DenBaars, ... Applied Physics Letters 83 (8), 1554-1556, 2003 | 201 | 2003 |
| Characterization of planar semipolar gallium nitride films on spinel substrates TJ Baker, BA Haskell, F Wu, PT Fini, JS Speck, S Nakamura Japanese journal of applied physics 44 (7L), L920, 2005 | 197 | 2005 |
| Dislocation generation in GaN heteroepitaxy XH Wu, P Fini, EJ Tarsa, B Heying, S Keller, UK Mishra, SP DenBaars, ... Journal of crystal growth 189, 231-243, 1998 | 173 | 1998 |
| Defect reduction in (11¯ 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy BA Haskell, TJ Baker, MB McLaurin, F Wu, PT Fini, SP DenBaars, ... Applied Physics Letters 86 (11), 2005 | 169 | 2005 |
Jim SpeckProfessor of Materials, UCSBPotvrđena adresa e-pošte na ucsb.edu