| Strain-related phenomena in GaN thin films C Kisielowski, J Krüger, S Ruvimov, T Suski, JW Ager III, E Jones, ... Physical review B 54 (24), 17745, 1996 | 1038 | 1996 |
| Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy OH Nam, MD Bremser, TS Zheleva, RF Davis Applied Physics Letters 71 (18), 2638-2640, 1997 | 860 | 1997 |
| Dislocation density reduction via lateral epitaxy in selectively grown GaN structures TS Zheleva, OH Nam, MD Bremser, RF Davis Applied Physics Letters 71 (17), 2472-2474, 1997 | 687 | 1997 |
| III-V nitrides for electronic and optoelectronic applications RF Davis Proceedings of the IEEE 79 (5), 702-712, 1991 | 621 | 1991 |
| Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide RF Davis, CH Carter Jr, CE Hunter US Patent App. 07/594,856, 1995 | 620* | 1995 |
| Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond Proceedings of the IEEE 79 (5), 677-701, 1991 | 593 | 1991 |
| A critical review of ohmic and rectifying contacts for silicon carbide LM Porter, RF Davis Materials Science and Engineering: B 34 (2-3), 83-105, 1995 | 581 | 1995 |
| Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy MJ Paisley, Z Sitar, JB Posthill, RF Davis Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989 | 502 | 1989 |
| Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ... US Patent 6,177,688, 2001 | 488 | 2001 |
| Gold Schottky contacts on oxygen plasma-treated, n-type BJ Coppa, RF Davis, RJ Nemanich Applied Physics Letters 82 (3), 400-402, 2003 | 481 | 2003 |
| Cleaning of AlN and GaN surfaces SW King, JP Barnak, MD Bremser, KM Tracy, C Ronning, RF Davis, ... Journal of Applied Physics 84 (9), 5248-5260, 1998 | 419 | 1998 |
| Diamond films and coatings: development, properties, and applications RF Davis (No Title), 1993 | 345 | 1993 |
| Epitaxial Growth and Characterization of β‐SiC Thin Films P Liaw, RF Davis Journal of the Electrochemical Society 132 (3), 642, 1985 | 338 | 1985 |
| Martensitic transformations in Ti-Mo alloys R Davis, HM Flower, DRF West Journal of Materials Science 14, 712-722, 1979 | 332 | 1979 |
| GaN thin films deposited via organometallic vapor phase epitaxy on α (6H)-SiC (0001) using high-temperature monocrystalline AlN buffer layers TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, RF Davis Applied physics letters 67 (3), 401-403, 1995 | 321 | 1995 |
| Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates HS Kong, JT Glass, RF Davis Journal of applied physics 64 (5), 2672-2679, 1988 | 297 | 1988 |
| Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer RF Davis, OH Nam, T Zheleva, MD Bremser US Patent 6,051,849, 2000 | 294 | 2000 |
| Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ... Materials Science and Engineering: B 1 (1), 77-104, 1988 | 284 | 1988 |
| Structural TEM study of nonpolar -plane gallium nitride grown on -SiC by organometallic vapor phase epitaxy DN Zakharov, Z Liliental-Weber, B Wagner, ZJ Reitmeier, EA Preble, ... Physical Review B—Condensed Matter and Materials Physics 71 (23), 235334, 2005 | 271 | 2005 |
| Phase evolution in boron nitride thin films DJ Kester, KS Ailey, RF Davis, KL More Journal of materials research 8 (6), 1213-1216, 1993 | 263 | 1993 |
