K. P. O'Donnell

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Suautori

Robert MartinProfessor of Physics, Strathclyde UniversityPotvrđena adresa e-pošte na strath.ac.uk
Eduardo AlvesFull Researcher, DECN, Instituto Superior Técnico, Universidade de LisboaPotvrđena adresa e-pošte na tecnico.ulisboa.pt
Carol Trager-CowanDepartment of Physics, University of StrathclydePotvrđena adresa e-pošte na strath.ac.uk
Sergio Manuel de Sousa PereiraCICECO and Physics Department University of AveiroPotvrđena adresa e-pošte na ua.pt
Paul R. EdwardsSenior Research Fellow, University of StrathclydePotvrđena adresa e-pošte na strath.ac.uk
Peter J ParbrookStokes Professor of Nitride Materials, University College CorkPotvrđena adresa e-pošte na tyndall.ie
Michal BockowskiInstitute of High Pressure Physics PASPotvrđena adresa e-pošte na unipress.waw.pl
EMILIO NOGALES DIAZUniversidad Complutense de MadridPotvrđena adresa e-pošte na fis.ucm.es
Olivier BriotL2C, CNRS, Université Montpellier 2Potvrđena adresa e-pošte na univ-montp2.fr
Iman RoqanKAUSTPotvrđena adresa e-pošte na kaust.edu.sa
Sergi HernándezUniversitat de BarcelonaPotvrđena adresa e-pošte na ub.edu
J Frederick w Mosselmansfacility scientist, diamond light sourcePotvrđena adresa e-pošte na diamond.ac.uk
Ingrid MoermanProfessor, Ghent UniversityPotvrđena adresa e-pošte na ugent.be
Luis ArtusCSICPotvrđena adresa e-pošte na ija.csic.es
Teresa MonteiroDepartamento de Física e i3N, Universidade de AveiroPotvrđena adresa e-pošte na ua.pt
Ben HourahineSenior Lecturer in photonic materials, University of StrathclydePotvrđena adresa e-pošte na strath.ac.uk
DAVID PASTORUniversidad Complutense de MadridPotvrđena adresa e-pošte na ucm.es
Nuno P. BarradasC2TN, DECN, Instituto Superior Técnico, Universidade de LisboaPotvrđena adresa e-pošte na ctn.tecnico.ulisboa.pt
DM BagnallMacquarie UniversityPotvrđena adresa e-pošte na mq.edu.au
Deepak UttamchandaniProfessor of Microsystems Engineering, University of Strathclyde, UKPotvrđena adresa e-pošte na strath.ac.uk

Prati

K. P. O'Donnell

ex-Strathclyde University

Potvrđena adresa e-pošte na strath.ac.uk - Početna stranica

Physics Luminescence Spectroscopy


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Temperature dependence of semiconductor band gaps KP O’Donnell, X Chen Applied Physics Letters 58 (25), 2924-2926, 1991	1472	1991
Origin of luminescence from InGaN diodes KP O'Donnell, RW Martin, PG Middleton Physical Review Letters 82 (1), 237, 1999	645	1999
Exciton localization and the Stokes’ shift in InGaN epilayers RW Martin, PG Middleton, KP O’Donnell, W Van der Stricht Applied Physics Letters 74 (2), 263-265, 1999	392	1999
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping S Pereira, MR Correia, E Pereira, KP O’Donnell, E Alves, AD Sequeira, ... Applied Physics Letters 80 (21), 3913-3915, 2002	290	2002
Compositional pulling effects in InxGa1-x N/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study S Pereira, MR Correia, E Pereira, KP O’Donnell, C Trager-Cowan, ... Physical Review B 64 (20), 205311, 2001	270	2001
Origin of the Stokes shift: a geometrical model of exciton spectra in 2D semiconductors F Yang, M Wilkinson, EJ Austin, KP O’Donnell Physical Review Letters 70 (3), 323, 1993	259	1993
Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state K Lorenz, N Franco, E Alves, IM Watson, RW Martin, KP O’Donnell Physical Review Letters 97 (8), 085501, 2006	185	2006
Luminescence decay in disordered low‐dimensional semiconductors X Chen, B Henderson, KP O’Donnell Applied Physics Letters 60 (21), 2672-2674, 1992	172	1992
Origin of the 0.97 eV luminescence in irradiated silicon KP O'Donnell, KM Lee, GD Watkins Physica B+ C 116 (1-3), 258-263, 1983	147	1983
Identification of the prime optical center in GaN: Eu3+ IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ... Physical Review B 81 (8), 085209, 2010	133	2010
Disorder and the optical spectroscopy of Cr3+-doped glasses: I. Silicate glasses F Rasheed, KP O'Donnell, B Henderson, DB Hollis Journal of Physics: Condensed Matter 3 (12), 1915, 1991	131	1991
Structural and optical properties of InGaN/GaN layers close to the critical layer thickness S Pereira, MR Correia, E Pereira, C Trager-Cowan, F Sweeney, ... Applied Physics Letters 81 (7), 1207-1209, 2002	126	2002
Rare-earth doped III-nitrides for optoelectronic and spintronic applications VD (Eds.)K.P. O'Donnell Springer, 2010	125*	2010
Raman-scattering study of the InGaN alloy over the whole composition range S Hernández, R Cuscó, D Pastor, L Artús, KP O'Donnell, RW Martin, ... J Appl Phys, 2005	122	2005
Structural analysis of InGaN epilayers KP O'Donnell, JFW Mosselmans, RW Martin, S Pereira, ME White Journal of Physics: Condensed Matter 13 (32), 6977, 2001	120	2001
Selectively excited photoluminescence from Eu-implanted GaN K Wang, RW Martin, KP O’Donnell, V Katchkanov, E Nogales, K Lorenz, ... Applied Physics Letters 87 (11), 2005	114	2005
Optical linewidths of InGaN light emitting diodes and epilayers KP O’Donnell, T Breitkopf, H Kalt, W Van der Stricht, I Moerman, ... Applied Physics Letters 70 (14), 1843-1845, 1997	103	1997
Optical energies of AlInN epilayers K Wang, RW Martin, D Amabile, PR Edwards, S Hernandez, E Nogales, ... Journal of Applied Physics 103 (7), 2008	96	2008
Disorder and the optical spectroscopy of Cr3+-doped glasses. II. Glasses with high and low ligand fields F Rasheed, KP O'Donnell, B Henderson, DB Hollis Journal of Physics: Condensed Matter 3 (21), 3825, 1991	93	1991
High-temperature annealing and optical activation of Eu-implanted GaN K Lorenz, U Wahl, E Alves, S Dalmasso, RW Martin, KP O'Donnell, ... Applied physics letters 85 (14), 2712-2714, 2004	90	2004

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