| Seeded growth of AlN bulk crystals in m-and c-orientation P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ... Journal of Crystal Growth 312 (1), 58-63, 2009 | 166 | 2009 |
| Report on the growth of bulk aluminum nitride and subsequent substrate preparation JC Rojo, GA Slack, K Morgan, B Raghothamachar, M Dudley, ... Journal of crystal growth 231 (3), 317-321, 2001 | 124 | 2001 |
| X-ray characterization of bulk AIN single crystals grown by the sublimation technique B Raghothamachar, M Dudley, JC Rojo, K Morgan, LJ Schowalter Journal of Crystal Growth 250 (1-2), 244-250, 2003 | 94 | 2003 |
| Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+ a during the physical vapor transport growth of 4H–SiC M Dudley, F Wu, H Wang, S Byrappa, B Raghothamachar, G Choi, S Sun, ... Applied Physics Letters 98 (23), 2011 | 89 | 2011 |
| Epitaxy of boron phosphide on aluminum nitride (0001)/sapphire substrate B Padavala, CD Frye, X Wang, Z Ding, R Chen, M Dudley, ... Crystal Growth & Design 16 (2), 981-987, 2016 | 81 | 2016 |
| Defect analysis in crystals using X‐ray topography B Raghothamachar, G Dhanaraj, J Bai, M Dudley Microscopy research and technique 69 (5), 343-358, 2006 | 78 | 2006 |
| Correlations between crystal defects and performance of CdZnTe detectors AE Bolotnikov, S Babalola, GS Camarda, Y Cui, R Gul, SU Egarievwe, ... IEEE Transactions on Nuclear Science 58 (4), 1972-1980, 2011 | 67 | 2011 |
| Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes Y Wang, GN Ali, MK Mikhov, V Vaidyanathan, BJ Skromme, ... Journal of applied physics 97 (1), 2005 | 67 | 2005 |
| Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules V Noveski, R Schlesser, B Raghothamachar, M Dudley, S Mahajan, ... Journal of crystal growth 279 (1-2), 13-19, 2005 | 53 | 2005 |
| Fabrication of native, single‐crystal AlN substrates LJ Schowalter, GA Slack, JB Whitlock, K Morgan, SB Schujman, ... physica status solidi (c), 1997-2000, 2003 | 43 | 2003 |
| Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN B Raghothamachar, WM Vetter, M Dudley, R Dalmau, R Schlesser, Z Sitar, ... Journal of crystal growth 246 (3-4), 271-280, 2002 | 43 | 2002 |
| Memory and perfection in ferroelastic inclusion compounds MD Hollingsworth, ML Peterson, JR Rush, ME Brown, MJ Abel, AA Black, ... Crystal growth & design 5 (6), 2100-2116, 2005 | 42 | 2005 |
| Characterization of threading dislocations in PVT-grown AlN substrates via X-ray topography and ray tracing simulation T Zhou, B Raghothamachar, F Wu, R Dalmau, B Moody, S Craft, ... Journal of electronic materials 43, 838-842, 2014 | 40 | 2014 |
| Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications M St G, EK Sanchez, DM Hansen, RD Drachev, G Chung, B Thomas, ... Journal of crystal growth 352 (1), 39-42, 2012 | 39 | 2012 |
| Low defect density bulk AlN substrates for high performance electronics and optoelectronics B Raghothamachar, R Dalmau, B Moody, HS Craft, R Schlesser, JQ Xie, ... Materials Science Forum 717, 1287-1290, 2012 | 37 | 2012 |
| The influence of polarity on twinning in zincblende structure crystals: new insights from a study of magnetic liquid encapsulated, Czochralski grown InP single crystals M Dudley, B Raghothamachar, Y Guo, XR Huang, H Chung, DTJ Hurle, ... Journal of crystal growth 192 (1-2), 1-10, 1998 | 37 | 1998 |
| Mapping of lattice strain in 4H-SiC crystals by synchrotron double-crystal X-ray topography J Guo, Y Yang, B Raghothamachar, M Dudley, S Stoupin Journal of Electronic Materials 47, 903-909, 2018 | 36 | 2018 |
| Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial J Guo, Y Yang, B Raghothamachar, T Kim, M Dudley, J Kim Journal of Crystal Growth 480, 119-125, 2017 | 36 | 2017 |
| Prismatic slip in PVT-grown 4H-SiC crystals J Guo, Y Yang, B Raghothamachar, J Kim, M Dudley, G Chung, ... Journal of Electronic Materials 46, 2040-2044, 2017 | 34 | 2017 |
| X-ray topography techniques for defect characterization of crystals B Raghothamachar, M Dudley, G Dhanaraj Springer Handbook of Crystal Growth, 1425-1451, 2010 | 34 | 2010 |
Michael DudleyStony Brook Univ., Univ. of Warwick, Strathclyde Univ., Université Pierre et Marie Curie (Paris 6)Potvrđena adresa e-pošte na stonybrook.edu
