| Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in AlxGa1−xAs/GaAs quantum wells by magneto-photoluminescence S Haldar, VK Dixit, G Vashisht, SK Khamari, S Porwal, TK Sharma, ... Scientific Reports 7 (1), 4905, 2017 | 30 | 2017 |
| Effect of 60Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p–i–n diode SK Khamari, VK Dixit, T Ganguli, S Porwal, SD Singh, S Kher, RK Sharma, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011 | 28 | 2011 |
| Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN A Chatterjee, SK Khamari, VK Dixit, SM Oak, TK Sharma Journal of Applied Physics 118 (17), 2015 | 25 | 2015 |
| Effect of high dose γ-ray irradiation on GaAs pin photodetectors VK Dixit, SK Khamari, S Manwani, S Porwal, K Alexander, TK Sharma, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015 | 24 | 2015 |
| Investigation of crystalline and electronic band alignment properties of GaP/Ge (111) heterostructure VK Dixit, S Kumar, SD Singh, SK Khamari, R Kumar, P Tiwari, DM Phase, ... Applied Physics Letters 104 (9), 2014 | 21 | 2014 |
| Effect of γ-ray irradiation on breakdown voltage, ideality factor, dark current and series resistance of GaAs p–i–n diode VRV Pillai, SK Khamari, VK Dixit, T Ganguli, S Kher, SM Oak Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2012 | 20 | 2012 |
| Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors A Chatterjee, SK Khamari, S Porwal, S Kher, TK Sharma Journal of Applied Physics 123 (16), 2018 | 17 | 2018 |
| Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors A Chatterjee, SK Khamari, R Kumar, S Porwal, A Bose, TK Sharma Superlattices and Microstructures 148, 106733, 2020 | 16 | 2020 |
| Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers A Chatterjee, SK Khamari, R Kumar, VK Dixit, SM Oak, TK Sharma Applied Physics Letters 106 (2), 2015 | 14 | 2015 |
| Numerical simulation of inverse spin Hall spectra in Pt/GaAs hybrid structure SK Khamari, VK Dixit, SM Oak Journal of Physics D: Applied Physics 44 (26), 265104, 2011 | 13 | 2011 |
| Role of ZrO2 Passivation Layer Thickness in the Fabrication of High‐Responsivity GaN Ultraviolet Photodetectors A Chatterjee, SK Khamari, S Porwal, TK Sharma physica status solidi (RRL)–Rapid Research Letters 13 (10), 1900265, 2019 | 12 | 2019 |
| Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors A Chatterjee, VK Agnihotri, SK Khamari, S Porwal, A Bose, SC Joshi, ... Journal of Applied Physics 124 (10), 2018 | 12 | 2018 |
| A spin-optoelectronic detector for the simultaneous measurement of the degree of circular polarization and intensity of a laser beam SK Khamari, S Porwal, SM Oak, TK Sharma Applied Physics Letters 107 (7), 2015 | 12 | 2015 |
| Temperature dependence of the photo-induced inverse spin Hall effect in Au/InP hybrid structures SK Khamari, S Porwal, VK Dixit, TK Sharma Applied Physics Letters 104 (4), 2014 | 11 | 2014 |
| Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers SK Khamari, S Arslan, C Zink, SJ Sweeney, P Crump Applied Physics Letters 122 (21), 2023 | 9 | 2023 |
| Evaluation of structural and microscopic properties of tetragonal ZrO2 for the facet coating of 980 nm semiconductor laser diodes VK Dixit, A Marathe, G Bhatt, SK Khamari, K Rajiv, R Kumar, C Mukherjee, ... Journal of Physics D: Applied Physics 48 (10), 105102, 2015 | 9 | 2015 |
| Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy SK Khamari, P Mudi, S Porwal, TK Sharma Journal of Luminescence 213, 204-209, 2019 | 8 | 2019 |
| Theoretical prediction and experimental demonstration of inter-valley scattering induced Inverse Spin Hall effect for hot electrons in GaAs P Mudi, SK Khamari, TK Sharma Journal of Applied Physics 126 (6), 2019 | 8 | 2019 |
| Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells SD Singh, VK Dixit, SK Khamari, R Kumar, AK Srivastava, T Ganguli, ... Journal of Applied Physics 109 (7), 2011 | 8 | 2011 |
| Role of Hot Electrons in the Development of GaAs‐Based Spin Hall Devices with Low Power Consumption P Mudi, SK Khamari, TK Sharma physica status solidi (RRL)–Rapid Research Letters 14 (6), 2000097, 2020 | 7 | 2020 |
Tarun Kumar SharmaProfessor, HBNI Mumbai & Head, Semiconductor Lasers & Devices Division, RRCAT Indore, IndiaPotvrđena adresa e-pošte na rrcat.gov.in