Kaustav Banerjee

Citirano

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Suautori

Jiahao KangPeking UniversityPotvrđena adresa e-pošte na pku.edu.cn
Wei LiuFujian Institute of Research on the Structure of Matter, Chinese Academy of SciencesPotvrđena adresa e-pošte na fjirsm.ac.cn
deblina sarkarAssistant Professor at MIT, AT&T Chair Prof. at MIT MAS & MIT Center for Neurobiological EngineeringPotvrđena adresa e-pošte na mit.edu
Wei CaoPostdoc Researcher, ECE@UCSBPotvrđena adresa e-pošte na ucsb.edu
Hong LiMicron Technology IncPotvrđena adresa e-pošte na ece.ucsb.edu
Chuan XuAnalog DevicesPotvrđena adresa e-pošte na analog.com
Navin SrivastavaSoftware Engineer, Intel CorpPotvrđena adresa e-pošte na intel.com
Xuejun Sheldon XiePhantaField Inc.Potvrđena adresa e-pošte na phantafield.com
chenming huUniversity of California, BerkeleyPotvrđena adresa e-pošte na eecs.berkeley.edu
A.M. IonescuProfessor of NanoelectronicsPotvrđena adresa e-pošte na epfl.ch
Junkai JiangGoogle, UCSB ECE, PKU EECSPotvrđena adresa e-pošte na google.com
Ajayan PMProfessor of Materials Science and NanoEngineering, Rice UniversityPotvrđena adresa e-pošte na rice.edu
R SuayaUTN FRBA visiting ProfessorPotvrđena adresa e-pošte na frba.utn.edu.ar
Debdeep JenaCornell UniversityPotvrđena adresa e-pošte na cornell.edu
Amir AjamiSenior Software Architect @ Synopsys Inc.Potvrđena adresa e-pošte na synopsys.com
Vivek DeIntel Fellow, Intel CorporationPotvrđena adresa e-pošte na intel.com
Kenneth E. GoodsonStanford Mechanical Engineering, Davies Provostial ProfessorPotvrđena adresa e-pošte na stanford.edu
Yongji Gong 宫勇吉Beihang UniversityPotvrđena adresa e-pošte na buaa.edu.cn
Kwang-Hoon Oh 오광훈Sung Kyun Kwan UniversityPotvrđena adresa e-pošte na skku.edu
Andras KisProfessor of Electrical Engineering, EPFLPotvrđena adresa e-pošte na epfl.ch

Prati

Kaustav Banerjee

UC Santa Barbara, Stanford University, UC Berkeley

Potvrđena adresa e-pošte na ece.ucsb.edu - Početna stranica

Nanoelectronics Quantum Electronics Carbon Nanomaterials 2D Materials Graphene


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Electrical contacts to two-dimensional semiconductors A Allain, J Kang, K Banerjee, A Kis Nature materials 14 (12), 1195-1205, 2015	1815	2015
3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration K Banerjee, SJ Souri, P Kapur, KC Saraswat Proceedings of the IEEE 89 (5), 602-633, 2001	1334	2001
MoS₂ Field-Effect Transistor for Next-Generation Label-Free Biosensors D Sarkar, W Liu, X Xie, AC Anselmo, S Mitragotri, K Banerjee ACS nano 8 (4), 3992-4003, 2014	1156	2014
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe₂ Field Effect Transistors W Liu, J Kang, D Sarkar, Y Khatami, D Jena, K Banerjee Nano letters 13 (5), 1983-1990, 2013	1133	2013
A subthermionic tunnel field-effect transistor with an atomically thin channel D Sarkar, X Xie, W Liu, W Cao, J Kang, Y Gong, S Kraemer, PM Ajayan, ... Nature 526 (7571), 91-95, 2015	1057	2015
Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors J Kang, W Liu, D Sarkar, D Jena, K Banerjee Physical Review X 4 (3), 031005, 2014	979	2014
Interconnect limits on gigascale integration (GSI) in the 21st century JA Davis, R Venkatesan, A Kaloyeros, M Beylansky, SJ Souri, K Banerjee, ... Proceedings of the IEEE 89 (3), 305-324, 2001	969	2001
Two-dimensional van der Waals materials P Ajayan, P Kim, K Banerjee Physics Today 69 (9), 38-44, 2016	585	2016
Carbon nanomaterials for next-generation interconnects and passives: Physics, status, and prospects H Li, C Xu, N Srivastava, K Banerjee IEEE Transactions on electron devices 56 (9), 1799-1821, 2009	560	2009
Modeling, analysis, and design of graphene nano-ribbon interconnects C Xu, H Li, K Banerjee IEEE transactions on electron devices 56 (8), 1567-1578, 2009	460	2009
Circuit modeling and performance analysis of multi-walled carbon nanotube interconnects H Li, WY Yin, K Banerjee, JF Mao IEEE Transactions on electron devices 55 (6), 1328-1337, 2008	460	2008
High-performance MoS2 transistors with low-resistance molybdenum contacts J Kang, W Liu, K Banerjee Applied Physics Letters 104 (9), 2014	444	2014
A power-optimal repeater insertion methodology for global interconnects in nanometer designs K Banerjee, A Mehrotra IEEE Transactions on Electron Devices 49 (11), 2001-2007, 2002	444	2002
Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition W Liu, H Li, C Xu, Y Khatami, K Banerjee Carbon 49 (13), 4122-4130, 2011	425	2011
Steep subthreshold slope n-and p-type tunnel-FET devices for low-power and energy-efficient digital circuits Y Khatami, K Banerjee IEEE transactions on electron devices 56 (11), 2752-2761, 2009	420	2009
Vertical Si-Nanowire-Type Tunneling FETs With Low Subthreshold Swing () at Room Temperature R Gandhi, Z Chen, N Singh, K Banerjee, S Lee IEEE Electron Device Letters 32 (4), 437-439, 2011	411	2011
Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing D Sarkar, X Xie, J Kang, H Zhang, W Liu, J Navarrete, M Moskovits, ... Nano letters 15 (5), 2852-2862, 2015	410	2015
Performance analysis of carbon nanotube interconnects for VLSI applications N Srivastava, K Banerjee ICCAD-2005. IEEE/ACM International Conference on Computer-Aided Design, 2005 …, 2005	394	2005
Multiple Si layer ICs: Motivation, performance analysis, and design implications SJ Souri, K Banerjee, A Mehrotra, KC Saraswat Proceedings of the 37th Annual Design Automation Conference, 213-220, 2000	390	2000
2D semiconductor FETs—Projections and design for sub-10 nm VLSI W Cao, J Kang, D Sarkar, W Liu, K Banerjee IEEE transactions on electron devices 62 (11), 3459-3469, 2015	350	2015

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