| Investigation of high-sensitivity piezoresistive pressure sensors at ultra-low differential pressures M Basov, DM Prigodskiy IEEE Sensors Journal 20 (14), 7646-7652, 2020 | 46 | 2020 |
| Development of high-sensitivity piezoresistive pressure sensors for− 0.5…+ 0.5 kPa M Basov, D Prigodskiy Journal of Micromechanics and Microengineering 30 (10), 105006, 2020 | 44 | 2020 |
| Ultra-high sensitivity MEMS pressure sensor utilizing bipolar junction transistor for pressures ranging from− 1 to 1 kPa M Basov IEEE Sensors Journal 21 (4), 4357-4364, 2020 | 32 | 2020 |
| High-sensitivity MEMS pressure sensor utilizing bipolar junction transistor with temperature compensation M Basov Sensors and Actuators A: Physical 303, 111705, 2020 | 31 | 2020 |
| Development of high-sensitivity pressure sensor with on-chip differential transistor amplifier M Basov Journal of Micromechanics and Microengineering 30 (6), 065001, 2020 | 27 | 2020 |
| Schottky diode temperature sensor for pressure sensor M Basov Sensors and Actuators A: Physical 331, 112930, 2021 | 26 | 2021 |
| Pressure sensor with novel electrical circuit utilizing bipolar junction transistor M Basov 2021 IEEE Sensors, 1-4, 2021 | 23 | 2021 |
| High sensitive, linear and thermostable pressure sensor utilizing bipolar junction transistor for 5 kPa M Basov Physica Scripta 96 (6), 065705, 2021 | 21 | 2021 |
| Modeling of sensitive element for pressure sensor based on bipolar piezotransistor M Basov, D Prigodskiy Sensors and Systems 215 (6), 17-24, 2017 | 21* | 2017 |
| Investigation of sensitive element for pressure sensor based on bipolar piezotransistor M Basov, D Prigodskiy Nano - i Mikrosistemnaya Tekhnika 19 (11), 2017 | 20* | 2017 |
| Research of Pressure Sensitive Elements with Increased Strenght D Prigodskiy, M Basov Nano Microsys 21 (6), 368-376, 2019 | 17 | 2019 |
| Research of Long-Term Stability of High Sensitivity Piezoresistive Pressure Sensors for Ultra-Low Differential Pressures M Basov IEEE Sensors Journal, 2024 | 3 | 2024 |
| Research of MEMS pressure sensor stability with PDA-NFL circuit M Basov IEEE Sensors Journal, 2024 | 1 | 2024 |
| Microassembly of pressure sensor chip with low error of long-term stability and mechanical strength M Basov RU Patent RU 230059 U1, 2024 | | 2024 |
| Microassembly of pressure sensor chip with upgraded base structure for increased long-term stability M Basov RU Patent RU 230026 U1, 2024 | | 2024 |
| Absolute pressure sensor with vacuum stabilizing getter layer M Basov RU Patent RU 224499 U1, 2024 | | 2024 |
| Mechanically ultra-high-strength absolute pressure sensor M Basov RU Patent RU 223684 U1, 2024 | | 2024 |
| Pressure Sensor Chip with New Electrical Circuit for 10 kPa Range M Basov arXiv preprint arXiv:2302.07101, 2023 | | 2023 |
| Absolute pressure sensor with upgraded base structure for improved long-term stability M Basov RU Patent RU 219932 U1, 2022 | | 2022 |
| Absolute pressure sensor with increased long-term stability M Basov RU Patent RU 212797 U1, 2022 | | 2022 |