Moiré photonics and optoelectronics L Du, MR Molas, Z Huang, G Zhang, F Wang, Z Sun
Science 379 (6639), eadg0014, 2023
145 2023 Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control L Li, Q Wang, F Wu, Q Xu, J Tian, Z Huang, Q Wang, X Zhao, Q Zhang, ...
Nature Communications 15 (1), 1825, 2024
33 2024 Room temperature field-free switching of perpendicular magnetization through spin-orbit torque originating from low-symmetry type II Weyl semimetal Y Zhang, H Xu, K Jia, G Lan, Z Huang, B He, C He, Q Shao, Y Wang, ...
Science Advances 9 (44), eadg9819, 2023
33 2023 Spatially indirect intervalley excitons in bilayer Z Huang, Y Zhao, T Bo, Y Chu, J Tian, L Liu, Y Yuan, F Wu, J Zhao, L Xian, ...
Physical Review B 105 (4), L041409, 2022
26 2022 Direct and Inverse Spin Splitting Effects in Altermagnetic RuO2 Y Guo, J Zhang, Z Zhu, Y Jiang, L Jiang, C Wu, J Dong, X Xu, W He, B He, ...
Advanced Science 11 (25), 2400967, 2024
17 2024 Weyl phonons in chiral crystals T Zhang, Z Huang, Z Pan, L Du, G Zhang, S Murakami
Nano Letters 23 (16), 7561-7567, 2023
13 2023 Coupled ferroelectricity and correlated states in a twisted quadrilayer MoS2 moiré superlattice F Wu, L Li, Q Xu, L Liu, Y Yuan, J Zhao, Z Huang, X Zan, K Watanabe, ...
Chinese Physics Letters 40 (4), 047303, 2023
11 2023 Nonlinear physics of moiré superlattices L Du, Z Huang, J Zhang, F Ye, Q Dai, H Deng, G Zhang, Z Sun
Nature Materials 23 (9), 1179-1192, 2024
8 2024 Giant Correlated Gap and Possible Room-Temperature Correlated States in Twisted Bilayer F Wu, Q Xu, Q Wang, Y Chu, L Li, J Tang, J Liu, J Tian, Y Ji, L Liu, Y Yuan, ...
Physical Review Letters 131 (25), 256201, 2023
7 2023 Dynamic-to-static switch of hydrogen bonds induces a metal–insulator transition in an organic–inorganic superlattice Z Xie, R Luo, T Ying, Y Gao, B Song, T Yu, X Chen, M Hao, C Chai, J Yan, ...
Nature Chemistry 16 (11), 1803-1810, 2024
6 2024 Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation J Yuan, M Liao, Z Huang, J Tian, Y Chu, L Du, W Yang, D Shi, R Yang, ...
Chinese Physics B 31 (8), 087302, 2022
3 2022 Observation of phonon Stark effect Z Huang, Y Bai, Y Zhao, L Liu, X Zhao, J Wu, K Watanabe, T Taniguchi, ...
Nature Communications 15 (1), 4586, 2024
2 2024 Electron/infrared-phonon coupling in ABC trilayer graphene X Zan, X Guo, A Deng, Z Huang, L Liu, F Wu, Y Yuan, J Zhao, Y Peng, L Li, ...
Nature Communications 15 (1), 1888, 2024
2 2024 Real-and momentum-indirect neutral and charged excitons in a multi-valley semiconductor Z Huang, Y Li, T Bo, Y Zhao, F Wu, L Li, Y Yuan, Y Ji, L Liu, J Tian, Y Chu, ...
National Science Open 2 (4), 20220060, 2023
2 2023 Rail-to-Rail MoS2 Inverters J Tian, Y Peng, Q Wang, Y Chu, Z Huang, N Li, X Li, J Tang, B Huang, ...
ACS Applied Electronic Materials 4 (6), 2636-2640, 2022
2 2022 Homo‐Site Nucleation Growth of Twisted Bilayer MoS2 with Commensurate Angles J Zhou, H Huang, Z Zhao, Z Dou, L Zhou, T Zhang, Z Huang, Y Feng, ...
Advanced Materials 36 (38), 2408227, 2024
1 2024 Epitaxial growth of trilayer graphene moiré superlattice Y Yuan, Y Chu, C Hu, J Tian, L Liu, F Wu, Y Ji, J Zhao, Z Huang, X Zan, ...
Chinese Physics B 32 (7), 077304, 2023
1 2023 Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 X Li, B Qin, Y Wang, Y Xi, Z Huang, M Zhao, Y Peng, Z Chen, Z Pan, J Zhu, ...
Nature Communications 15 (1), 10921, 2024
2024 Medium-scale flexible integrated circuits based on 2D semiconductors Y Peng, C Cui, L Li, Y Wang, Q Wang, J Tian, Z Huang, B Huang, Y Zhang, ...
Nature Communications 15 (1), 10833, 2024
2024 Sliding ferroelectric memories and synapses X Li, B Qin, Y Wang, Y Xi, Z Huang, M Zhao, Y Peng, Z Chen, Z Pan, J Zhu, ...
arXiv preprint arXiv:2401.16150, 2024
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