Layout optimization of complementary FET 6T-SRAM cell based on a universal methodology using sensitivity with respect to parasitic-and-values Y Luo, L Cao, Q Zhang, Y Cao, Z Zhang, J Yao, G Yan, X Zhang, W Gan, ...
IEEE Transactions on Electron Devices 69 (11), 6095-6101, 2022
14 2022 Investigation of novel hybrid channel complementary FET scaling beyond 3-nm node from device to circuit Y Luo, Q Zhang, L Cao, W Gan, H Xu, Y Cao, J Gu, R Xu, G Yan, J Huo, ...
IEEE Transactions on Electron Devices 69 (7), 3581-3588, 2022
14 2022 Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications Z Zhang, G Tian, J Huo, F Zhang, Q Zhang, G Xu, Z Wu, Y Cheng, Y Liu, ...
Science China Information Sciences 66 (10), 200405, 2023
10 2023 A multiscale simulation framework for steep-slope Si nanowire cold source FET W Gan, K Luo, G Qi, RJ Prentki, F Liu, J Huo, W Huang, J Bu, Q Zhang, ...
IEEE Transactions on Electron Devices 68 (11), 5455-5461, 2021
10 2021 Quasi-Volatile MoS2 Barristor Memory for 1T Compact Neuron by Correlative Charges Trapping and Schottky Barrier Modulation J Huo, H Yin, Y Zhang, X Tan, Y Mao, C Zhang, F Zhang, G Zhan, Z Zhang, ...
ACS Applied Materials & Interfaces 14 (51), 57440-57448, 2022
8 2022 Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit J Huo, W Huang, F Zhang, S Zhang, W Gan, Q Huo, Y Cai, Q Zhang, Y Li, ...
Microelectronics Journal 116, 105196, 2021
7 2021 Vertically stacked nanosheet number optimization strategy for complementary FET (CFET) scaling beyond 2 nm S Li, Y Luo, H Xu, J Huo, Z Di, Y Li, Q Zhang, H Yin, Z Wu
IEEE Transactions on Electron Devices 70 (12), 6118-6124, 2023
5 2023 Stacked HZO/α-In2 Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window J Huo, Z Zhang, Y Zhang, F Zhang, G Yan, G Tian, H Xu, G Zhan, G Xu, ...
IEEE Transactions on Electron Devices 70 (6), 3071-3075, 2023
5 2023 Influence of parasitic capacitance and resistance on performance of 6T-SRAM for advanced CMOS circuits design Y Luo, G Yan, L Cao, J Huo, X Zhang, Y Wei, G Tian, Q Zhang, Z Wu, ...
2022 China Semiconductor Technology International Conference (CSTIC), 1-3, 2022
4 2022 Theoretical study of negative capacitance FinFET with quasi-antiferroelectric material F Zhang, Y Peng, X Deng, J Huo, Y Liu, G Han, Z Wu, H Yin, Y Hao
IEEE Transactions on Electron Devices 68 (6), 3074-3079, 2021
3 2021 Multi-physics evaluation of silicon steep-slope cold source FET W Gan, R Prentki, K Luo, J Huo, W Huang, Q Huo, J Bu, R Cao, Y Lu, ...
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
3 2021 The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf F Zhang, Z Zhang, J Yao, X Zhu, Y Peng, J Huo, Q Zhang, G Xu, Z Wu, ...
IEEE Transactions on Electron Devices, 2024
2 2024 Unique Consecutive RTN Characteristics Coupled With Ferroelectric Nanodomain Switching in Advanced Fe-FinFETs F Zhang, H Yang, Q Zhang, Y Peng, J Duan, H Xu, J Huo, X Wang, G Xu, ...
IEEE Electron Device Letters 45 (4), 566-569, 2024
2 2024 Ultralow‐Power Compact Artificial Synapse Based on a Ferroelectric Fin Field‐Effect Transistor for Spatiotemporal Information Processing Z Zhang, G Zhan, W Gan, Y Cheng, X Zhang, Y Peng, J Tang, F Zhang, ...
Advanced Intelligent Systems 5 (11), 2300275, 2023
2 2023 Compact Physical Implementation of Spiking Neural Network Using Ambipolar WSe2 n-Type/p-Type Ferroelectric Field-Effect Transistor J Huo, L Li, H Zheng, J Gao, TTT Tun, H Xiang, KW Ang
ACS nano 18 (41), 28394-28405, 2024
1 2024 Reconfigurable Five-In-One Carbon Nanotube Optoelectronic Transistor for Intelligent Computing and Communication S Liu, H Huang, Y Li, Z Zhang, Y Zhang, Y Li, Q Wang, Q Zhang, J Huo, ...
ACS Applied Materials & Interfaces 16 (40), 54435-54444, 2024
1 2024 Device-Circuit Co-Optimization for Negative Capacitance FinFETs based on SPICE Model J Huo, W Huang, F Zhang, Q Huo, W Gan, H Xu, H Zhu, H Yin, Z Wu
2020 International Workshop on Advanced Patterning Solutions (IWAPS), 1-4, 2020
1 2020 High-Performance Carbon Nanotube Optoelectronic Transistors for Memory Applications S Liu, H Huang, Y Li, Y Zhang, F Wang, Y Lu, R Jiang, J Huo, H Yin
2024 IEEE 17th International Conference on Solid-State & Integrated Circuit …, 2024
2024 High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications S Liu, H Huang, Y Li, Y Zhang, F Wang, Z Zhang, Q Zhang, J Huo, J Yao, ...
IEEE Journal of the Electron Devices Society, 2024
2024 Impact of Thickness Dependent Ferroelectric and Interface Charge Variation on Device-to-Device Variation in Ferroelectric FET F Zhang, Z Zhang, J Huo, Q Zhang, G Xu, Z Wu, G Han, H Yin, Y Liu
2024 Conference of Science and Technology for Integrated Circuits (CSTIC), 1-3, 2024
2024