| Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer V Rajagopal Reddy, V Manjunath, V Janardhanam, YH Kil, CJ Choi Journal of electronic materials 43, 3499-3507, 2014 | 114 | 2014 |
| Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0) V Janardhanam, AA Kumar, VR Reddy, PN Reddy Journal of Alloys and Compounds 485 (1-2), 467-472, 2009 | 101 | 2009 |
| Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers V Janardhanam, HK Lee, KH Shim, HB Hong, SH Lee, KS Ahn, CJ Choi Journal of alloys and compounds 504 (1), 146-150, 2010 | 96 | 2010 |
| Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode PRS Reddy, V Janardhanam, KH Shim, VR Reddy, SN Lee, SJ Park, ... Vacuum 171, 109012, 2020 | 78 | 2020 |
| Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer V Manjunath, VR Reddy, PRS Reddy, V Janardhanam, CJ Choi Current Applied Physics 17 (7), 980-988, 2017 | 52 | 2017 |
| Temperature-dependent current–voltage characteristics of Se Schottky contact to n-type Ge V Janardhanam, I Jyothi, KS Ahn, CJ Choi Thin Solid Films 546, 63-68, 2013 | 51 | 2013 |
| Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer M Uma, N Balaram, PR Sekhar Reddy, V Janardhanam, ... Journal of Electronic Materials 48, 4217-4225, 2019 | 50 | 2019 |
| Current–voltage–temperature (I–V–T) characteristics of Pd/Au Schottky contacts on n-InP (1 1 1) MB Reddy, AA Kumar, V Janardhanam, VR Reddy, PN Reddy Current Applied Physics 9 (5), 972-977, 2009 | 50 | 2009 |
| Temperature dependency of Schottky barrier parameters of Ti Schottky contacts to Si-on-insulator I Jyothi, HD Yang, KH Shim, V Janardhanam, SM Kang, H Hong, CJ Choi Materials Transactions 54 (9), 1655-1660, 2013 | 46 | 2013 |
| Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode VR Reddy, V Janardhanam, CH Leem, CJ Choi Superlattices and Microstructures 67, 242-255, 2014 | 44 | 2014 |
| Current–voltage and capacitance–voltage characteristics of Al Schottky contacts to strained Si-on-insulator in the wide temperature range I Jyothi, V Janardhanam, H Hong, CJ Choi Materials Science in Semiconductor Processing 39, 390-399, 2015 | 43 | 2015 |
| Electrical properties of Pt/n-type Ge Schottky contact with PEDOT: PSS interlayer AA Kumar, VR Reddy, V Janardhanam, HD Yang, HJ Yun, CJ Choi Journal of alloys and compounds 549, 18-21, 2013 | 43 | 2013 |
| Electrical properties of Pt/n-Ge Schottky contact modified using copper phthalocyanine (CuPc) interlayer AA Kumar, VR Reddy, V Janardhanam, MW Seo, H Hong, KS Shin, ... Journal of The Electrochemical Society 159 (1), H33, 2011 | 40 | 2011 |
| Temperature-dependent current–voltage characteristics of Er-silicide Schottky contacts to strained Si-on-insulator I Jyothi, MW Seo, V Janardhanam, KH Shim, YB Lee, KS Ahn, CJ Choi Journal of alloys and compounds 556, 252-258, 2013 | 39 | 2013 |
| Microstructural, electrical and frequency-dependent properties of Au/p-Cu2ZnSnS4/n-GaN heterojunction VR Reddy, V Janardhanam, J Won, CJ Choi Journal of colloid and interface science 499, 180-188, 2017 | 35 | 2017 |
| Energy-level alignment and electrical properties of Al/p-type Si Schottky diodes with sorbitol-doped PEDOT: PSS as an organic interlayer V Janardhanam, HJ Yun, I Jyothi, J Lee, H Hong, VR Reddy, CJ Choi Journal of Alloys and Compounds 637, 84-89, 2015 | 30 | 2015 |
| Modified electrical characteristics of Pt/n-type Ge Schottky diode with a pyronine-B interlayer I Jyothi, V Janardhanam, VR Reddy, CJ Choi Superlattices and Microstructures 75, 806-817, 2014 | 30 | 2014 |
| Electrical properties of Au/Bi0. 5Na0. 5TiO3-BaTiO3/n-GaN metal–insulator–semiconductor (MIS) structure VR Reddy, V Janardhanam, JW Ju, H Hong, CJ Choi Semiconductor Science and Technology 29 (7), 075001, 2014 | 30 | 2014 |
| Carrier transport mechanism of Se/n-type Si Schottky diodes V Janardhanam, YK Park, KS Ahn, CJ Choi Journal of alloys and compounds 534, 37-41, 2012 | 30 | 2012 |
| Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization V Janardhanam, I Jyothi, SN Lee, VR Reddy, CJ Choi Thin Solid Films 676, 125-132, 2019 | 29 | 2019 |
