| Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD J Sheng, TH Hong, HM Lee, KR Kim, M Sasase, J Kim, H Hosono, ... ACS applied materials & interfaces 11 (43), 40300-40309, 2019 | 267 | 2019 |
| Review of recent advances in flexible oxide semiconductor thin-film transistors J Sheng, HJ Jeong, KL Han, TH Hong, JS Park Journal of Information Display 18 (4), 159-172, 2017 | 135 | 2017 |
| Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development J Sheng, JH Lee, WH Choi, TH Hong, MJ Kim, JS Park Journal of Vacuum Science & Technology A 36 (6), 2018 | 132 | 2018 |
| Design of InZnSnO semiconductor alloys synthesized by supercycle atomic layer deposition and their rollable applications J Sheng, TH Hong, DH Kang, Y Yi, JH Lim, JS Park ACS Applied Materials & Interfaces 11 (13), 12683-12692, 2019 | 74 | 2019 |
| Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes J Sheng, KL Han, TH Hong, WH Choi, JS Park Journal of Semiconductors 39 (1), 011008, 2018 | 65 | 2018 |
| Remarkable stability improvement with a high‐performance PEALD‐IZO/IGZO top‐gate thin‐film transistor via modulating dual‐channel effects YS Kim, WB Lee, HJ Oh, TH Hong, JS Park Advanced Materials Interfaces 9 (16), 2200501, 2022 | 44 | 2022 |
| Metastable rhombohedral phase transition of semiconducting indium oxide controlled by thermal atomic layer deposition JH Lee, J Sheng, H An, TH Hong, HY Kim, HK Lee, JH Seok, JW Park, ... Chemistry of Materials 32 (17), 7397-7403, 2020 | 34 | 2020 |
| Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor TH Hong, HJ Jeong, HM Lee, SH Choi, JH Lim, JS Park ACS Applied Materials & Interfaces 13 (24), 28493-28502, 2021 | 32 | 2021 |
| Exploration of chemical composition of In–Ga–Zn–O system via PEALD technique for optimal physical and electrical properties TH Hong, YS Kim, SH Choi, JH Lim, JS Park Advanced Electronic Materials 9 (4), 2201208, 2023 | 23 | 2023 |
| Structural, Optical, and Electrical Properties of InOx Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Flexible Device Applications TH Hong, KR Kim, SH Choi, SH Lee, KL Han, JH Lim, JS Park ACS Applied Electronic Materials 4 (6), 3010-3017, 2022 | 20 | 2022 |
| Plasma-enhanced atomic-layer-deposited indium oxide thin film using a DMION precursor within a wide process window SH Choi, TH Hong, SH Ryu, JS Park Ceramics International 48 (19), 27807-27814, 2022 | 17 | 2022 |
| Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors SH Choi, HJ Jeong, TH Hong, YH Na, CK Park, MY Lim, SH Jeong, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 14 | 2021 |
| Plasma-enhanced atomic layer deposition assisted low-temperature synthetic routes to rationally designed metastable C-axis aligned hexagonal In-Zn-O TH Hong, HW Kim, YS Kim, HJ Jeong, SB Cho, JS Park Chemistry of Materials 35 (13), 5168-5176, 2023 | 8 | 2023 |
| Plasma Enhanced atomic layer deposited amorphous gallium oxide thin films using novel trimethyl [N-(2-methoxyethyl)-2-methylpropan-2-amine] gallium TH Hong, WH Choi, SH Choi, HK Lee, JH Seok, JW Park, JH Lim, JS Park Ceramics International 47 (2), 1588-1593, 2021 | 7 | 2021 |
| Delamination of Graphene/ZnO interlayer driven by photocatalytic effect for flexible a-IGZO TFT applications WB Lee, HS Shin, KL Han, TH Hong, TH Han, JS Park Applied Surface Science 571, 151358, 2022 | 5 | 2022 |
| Rapid gas-induced detachable rGO/MnO debonding layer for flexible electronic applications YB Kim, TH Hong, J Sheng, H Park, SH Noh, SB Ambade, W Eom, ... Carbon 146, 756-762, 2019 | 4 | 2019 |
| Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition YS Kim, H Hong, TH Hong, SH Choi, KB Chung, JS Park Applied Surface Science 664, 160242, 2024 | 3 | 2024 |
| Display device and method of manufacturing the same JS Park, JH Lim, JS Park, J Sheng, TH Hong US Patent App. 16/782,973, 2020 | 3 | 2020 |
| Tailoring indium oxide film characteristics through oxygen reactants in atomic layer deposition with highly reactive liquid precursor SH Ryu, TH Hong, SH Choi, K Yeom, DW Ryu, JH Seok, JS Park Applied Surface Science 664, 160271, 2024 | 1 | 2024 |
| (Invited) Atomic Layer Deposited Amorphous Igzo Semiconductor with Vertical Composition Engineering for High Mobility Field Effect Transistor J Sheng, TH Hong, HJ Jeong, JS Park Electrochemical Society Meeting Abstracts prime2020, 1659-1659, 2020 | 1 | 2020 |
