A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ...
2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017
539 2017 A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ...
2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016
431 2016 Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ...
ACS applied materials & interfaces 9 (4), 3792-3798, 2017
331 2017 Novel ferroelectric FET based synapse for neuromorphic systems H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ...
2017 Symposium on VLSI Technology, T176-T177, 2017
269 2017 Complex internal bias fields in ferroelectric hafnium oxide T Schenk, M Hoffmann, J Ocker, M Pesic, T Mikolajick, U Schroeder
ACS applied materials & interfaces 7 (36), 20224-20233, 2015
267 2015 Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015
161 2015 FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ...
2020 IEEE International Memory Workshop (IMW), 1-4, 2020
160 2020 High endurance strategies for hafnium oxide based ferroelectric field effect transistor J Muller, P Polakowski, S Muller, H Mulaosmanovic, J Ocker, T Mikolajick, ...
2016 16th non-volatile memory technology symposium (NVMTS), 1-7, 2016
104 2016 Memory cell arrangement and methods thereof M Mennenga, J Ocker
US Patent 11,309,034, 2022
56 2022 In-gap electronic structure of LaAlO A Koitzsch, J Ocker, M Knupfer, MC Dekker, K Dörr, B Büchner, ...
Physical Review B—Condensed Matter and Materials Physics 84 (24), 245121, 2011
56 2011 Memory cell and methods thereof SF Müller, M Noack, J Ocker, R Jähne
US Patent 10,438,645, 2019
53 2019 Interplay Between Switching and Retention in HfO2 -Based Ferroelectric FETs H Mulaosmanovic, F Müller, M Lederer, T Ali, R Hoffmann, K Seidel, ...
IEEE Transactions on Electron Devices 67 (8), 3466-3471, 2020
47 2020 Reconfigurable Si nanowire nonvolatile transistors SJ Park, DY Jeon, S Piontek, M Grube, J Ocker, V Sessi, A Heinzig, ...
Advanced Electronic Materials 4 (1), 1700399, 2018
34 2018 2017 Symposium on VLSI Technology H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ...
Symposium on VLSI Technology, T176-T177, 2017
27 2017 2017 IEEE Int. Electron Devices Meeting (IEDM) S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ...
IEEE, 2017
26 2017 Application and Benefits of Target Programming Algorithms for Ferroelectric HfO2 Transistors H Zhou, J Ocker, A Padovani, M Pesic, M Trentzsch, S Dünkel, ...
2020 IEEE International Electron Devices Meeting (IEDM), 18.6. 1-18.6. 4, 2020
24 2020 IEEE International Electron Devices Meeting (IEDM) M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ...
San Francisco, CA, 11.5, 2016
22 2016 Impact of field cycling on HfO2 based non-volatile memory devices U Schroeder, M Pešic, T Schenk, H Mulaosmanovic, S Slesazeck, J Ocker, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 364-368, 2016
19 2016 Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3 and HfO2 on AlGaN/GaN heterostructure capacitors A Winzer, N Szabó, J Ocker, R Hentschel, M Schuster, F Schubert, ...
Journal of Applied Physics 118 (12), 2015
19 2015 Memory cell and methods thereof SF Müller, M Noack, J Ocker, R Jähne
US Patent 10,622,051, 2020
18 2020 