| The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021 | 291 | 2021 |
| Toward automated defect extraction from bias temperature instability measurements D Waldhoer, C Schleich, J Michl, B Stampfer, K Tselios, EG Ioannidis, ... IEEE Transactions on Electron Devices 68 (8), 4057-4063, 2021 | 37 | 2021 |
| Physical modeling of charge trapping in 4H-SiC DMOSFET technologies C Schleich, D Waldhoer, K Waschneck, MW Feil, H Reisinger, T Grasser, ... IEEE Transactions on Electron Devices 68 (8), 4016-4021, 2021 | 36 | 2021 |
| Physical modeling of bias temperature instabilities in SiC MOSFETs C Schleich, J Berens, G Rzepa, G Pobegen, G Rescher, S Tyaginov, ... 2019 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2019 | 29 | 2019 |
| Similarities and differences of BTI in SiC and Si power MOSFETs J Berens, M Weger, G Pobegen, T Aichinger, G Rescher, C Schleich, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 23 | 2020 |
| Evidence of tunneling driven random telegraph noise in cryo-CMOS J Michl, A Grill, B Stampfer, D Waldhoer, C Schleich, T Knobloch, ... 2021 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2021 | 17 | 2021 |
| Comphy v3. 0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices D Waldhoer, C Schleich, J Michl, A Grill, D Claes, A Karl, T Knobloch, ... Microelectronics Reliability 146, 115004, 2023 | 15 | 2023 |
| Single-versus multi-step trap assisted tunneling currents—Part I: Theory C Schleich, D Waldhör, T Knobloch, W Zhou, B Stampfer, J Michl, M Waltl, ... IEEE Transactions on Electron Devices 69 (8), 4479-4485, 2022 | 15 | 2022 |
| The impact of interfacial charge trapping on the reproducibility of measurements of silicon carbide MOSFET device parameters MW Feil, A Huerner, K Puschkarsky, C Schleich, T Aichinger, W Gustin, ... Crystals 10 (12), 1143, 2020 | 15 | 2020 |
| Single-versus multi-step trap assisted tunneling currents—Part II: The role of polarons C Schleich, D Waldhör, AM El-Sayed, K Tselios, B Kaczer, T Grasser, ... IEEE Transactions on Electron Devices 69 (8), 4486-4493, 2022 | 12 | 2022 |
| Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors MW Feil, H Reisinger, A Kabakow, T Aichinger, C Schleich, A Vasilev, ... Communications Engineering 2 (1), 5, 2023 | 11 | 2023 |
| On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, T Müller, ... arXiv preprint arXiv:2008.04144, 2020 | 7 | 2020 |
| The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials. Nat. Electron. 4, 98–108 (2021) T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... | 5 | 2021 |
| Impact of single-defects on the variability of CMOS inverter circuits M Waltl, D Waldhoer, K Tselios, B Stampfer, C Schleich, G Rzepa, ... Microelectronics Reliability 126, 114275, 2021 | 4 | 2021 |
| Generation of hot-carrier induced border and interface traps, investigated by spectroscopic charge pumping B Ruch, G Pobegen, C Schleich, T Grasser 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 4 | 2020 |
| TCAD modeling of temperature activation of the hysteresis characteristics of lateral 4H-SiC MOSFETs A Vasilev, M Jech, A Grill, G Rzepa, C Schleich, S Tyaginov, A Makarov, ... IEEE Transactions on Electron Devices 69 (6), 3290-3295, 2022 | 3 | 2022 |
| Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors A Vasilev, M Jech, A Grill, G Rzepa, C Schleich, A Makarov, G Pobegen, ... 2020 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2020 | 3 | 2020 |
| An efficient and accurate DTCO simulation framework for reliability and variability-aware explorations of FinFETs, nanosheets, and beyond M Karner, G Rzepa, C Schleich, F Schanovsky, C Kernstock, HW Karner, ... 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | 2 | 2024 |
| Oxide and interface defect analysis of lateral 4H-SiC MOSFETs through CV characterization and TCAD simulations A Vasilev, MW Feil, C Schleich, B Stampfer, G Rzepa, G Pobegen, ... Materials Science Forum 1090, 119-126, 2023 | 2 | 2023 |
| Identifying Defects in Charge Trapping Related Phenomena D Waldhoer, C Schleich, J Michl, T Grasser 2023 International Conference on Numerical Simulation of Optoelectronic …, 2023 | 1 | 2023 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEE-mail megerősítve itt: iue.tuwien.ac.at
