| Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source YC Jung, SM Hwang, DN Le, ALN Kondusamy, J Mohan, SW Kim, JH Kim, ... Materials 13 (15), 3387, 2020 | 22 | 2020 |
| Ferroelectric field-effect transistors for binary neural network with 3-D NAND architecture GH Lee, MS Song, S Kim, J Yim, S Hwang, J Yu, D Kwon, H Kim IEEE Transactions on Electron Devices 69 (11), 6438-6445, 2022 | 20 | 2022 |
| Application of single-pulse charge pumping method on evaluation of indium gallium zinc oxide thin-film transistors MC Nguyen, AHT Nguyen, H Ji, J Cheon, JH Kim, KM Yu, SY Cho, ... IEEE Transactions on Electron Devices 65 (9), 3786-3790, 2018 | 19 | 2018 |
| Electrical characterization of the self-heating effect in oxide semiconductor thin-film transistors using pulse-based measurements MC Nguyen, N On, H Ji, AHT Nguyen, S Choi, J Cheon, KM Yu, SY Cho, ... IEEE Transactions on Electron Devices 65 (6), 2492-2497, 2018 | 15 | 2018 |
| Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0. 5Zr0. 5O2 C Han, KR Kwon, J Kim, J Yim, S Kim, EC Park, JW You, S Jeong, R Choi, ... Materials Science in Semiconductor Processing 160, 107401, 2023 | 9 | 2023 |
| Ferroelectric field-effect transistor synaptic device with hafnium-silicate interlayer SW Kim, W Shin, M Kim, KR Kwon, J Yim, J Kim, C Han, S Jeong, EC Park, ... IEEE Electron Device Letters 44 (12), 1955-1958, 2023 | 8 | 2023 |
| Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO2 C Han, SJ Kwon, J Yim, J Kim, S Kim, S Jeong, EC Park, JW You, R Choi, ... IEEE Transactions on Electron Devices 69 (6), 3499-3502, 2022 | 8 | 2022 |
| Solution-processed Rb-doped indium zinc oxide thin-film transistors SW Kim, MC Nguyen, AHT Nguyen, SJ Choi, HM Ji, JG Cheon, KM Yu, ... IEEE Electron Device Letters 39 (9), 1330-1333, 2018 | 8 | 2018 |
| Unraveling threshold voltage instability in ferroelectric junctionless FETs using low-frequency noise measurement with base bias W Shin, RH Koo, S Kim, D Kwon, JJ Kim, D Kwon, JH Lee IEEE Electron Device Letters 44 (10), 1768-1771, 2023 | 6 | 2023 |
| Ferroelectric polarization-switching acceleration of sputtered Hf0. 5Zr0. 5O2 with defect-induced polarization of interlayer C Han, J Yim, A Nguyen, J Kim, KR Kwon, S Kim, S Jeong, EC Park, ... Journal of Alloys and Compounds 960, 170516, 2023 | 2 | 2023 |
| Channel-length-dependent low-frequency noise characteristics of ferroelectric junctionless poly-Si thin-film transistors W Shin, S Kim, RH Koo, D Kwon, JJ Kim, DH Kwon, D Kwon, JH Lee IEEE Electron Device Letters 44 (6), 1003-1006, 2023 | 2 | 2023 |
Rino ChoiProfessor of Materials Science and Eng., Inha UniversityE-mail megerősítve itt: inha.ac.kr
