Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si H Schmid, M Borg, K Moselund, L Gignac, CM Breslin, J Bruley, D Cutaia, ...
Applied Physics Letters 106 (23), 2015
270 2015 High-speed III-V nanowire photodetector monolithically integrated on Si S Mauthe, Y Baumgartner, M Sousa, Q Ding, MD Rossell, A Schenk, ...
Nature communications 11 (1), 4565, 2020
195 2020 Vertical III–V nanowire device integration on Si (100) M Borg, H Schmid, KE Moselund, G Signorello, L Gignac, J Bruley, ...
Nano letters 14 (4), 1914-1920, 2014
185 2014 Si–InAs heterojunction Esaki tunnel diodes with high current densities MT Björk, H Schmid, CD Bessire, KE Moselund, H Ghoneim, S Karg, ...
Applied Physics Letters 97 (16), 2010
128 2010 A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon C Convertino, CB Zota, H Schmid, D Caimi, L Czornomaz, AM Ionescu, ...
nature electronics 4 (2), 162-170, 2021
102 2021 Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon V Pott, KE Moselund, D Bouvet, L De Michielis, AM Ionescu
IEEE transactions on nanotechnology 7 (6), 733-744, 2008
96 2008 Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk
IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016
94 2016 Room-temperature lasing from monolithically integrated GaAs microdisks on silicon S Wirths, BF Mayer, H Schmid, M Sousa, J Gooth, H Riel, KE Moselund
ACS nano 12 (3), 2169-2175, 2018
85 2018 III–V heterostructure tunnel field-effect transistor C Convertino, CB Zota, H Schmid, AM Ionescu, KE Moselund
Journal of Physics: Condensed Matter 30 (26), 264005, 2018
75 2018 Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si M Borg, H Schmid, KE Moselund, D Cutaia, H Riel
Journal of Applied Physics 117 (14), 2015
74 2015 InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs H Riel, KE Moselund, C Bessire, MT Björk, A Schenk, H Ghoneim, ...
2012 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2012
74 2012 High-mobility GaSb nanostructures cointegrated with InAs on Si M Borg, H Schmid, J Gooth, MD Rossell, D Cutaia, M Knoedler, ...
ACS nano 11 (3), 2554-2560, 2017
72 2017 Waveguide coupled III-V photodiodes monolithically integrated on Si P Wen, P Tiwari, S Mauthe, H Schmid, M Sousa, M Scherrer, M Baumann, ...
Nature Communications 13 (1), 909, 2022
71 2022 Ballistic one-dimensional InAs nanowire cross-junction interconnects J Gooth, M Borg, H Schmid, V Schaller, S Wirths, K Moselund, M Luisier, ...
Nano letters 17 (4), 2596-2602, 2017
70 2017 Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- KE Moselund, MT Bjork, H Schmid, H Ghoneim, S Karg, E Lortscher, ...
IEEE Transactions on Electron Devices 58 (9), 2911-2916, 2011
67 2011 Complementary III–V heterojunction lateral NW tunnel FET technology on Si D Cutaia, KE Moselund, H Schmid, M Borg, A Olziersky, H Riel
2016 IEEE Symposium on VlSI Technology, 1-2, 2016
61 2016 Scaled resistively-coupled VO2 oscillators for neuromorphic computing E Corti, B Gotsmann, K Moselund, AM Ionescu, J Robertson, S Karg
Solid-State Electronics 168, 107729, 2020
60 2020 Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress KE Moselund, P Dobrosz, S Olsen, V Pott, L De Michielis, D Tsamados, ...
2007 IEEE International Electron Devices Meeting, 191-194, 2007
59 2007 Comparison of VLS grown Si NW tunnel FETs with different gate stacks KE Moselund, H Ghoneim, MT Bjork, H Schmid, S Karg, E Lortscher, ...
2009 Proceedings of the European Solid State Device Research Conference, 448-451, 2009
50 2009 Lateral InAs/Si p-type tunnel FETs integrated on Si—part 1: experimental devices KE Moselund, D Cutaia, H Schmid, M Borg, S Sant, A Schenk, H Riel
IEEE Transactions on Electron Devices 63 (11), 4233-4239, 2016
49 2016