Silicene, silicene derivatives, and their device applications A Molle, C Grazianetti, L Tao, D Taneja, MH Alam, D Akinwande
Chemical Society Reviews 47 (16), 6370-6387, 2018
346 2018 Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers MH Alam, Z Xu, S Chowdhury, Z Jiang, D Taneja, SK Banerjee, K Lai, ...
Nature communications 11 (1), 3203, 2020
47 2020 Disassembling silicene from native substrate and transferring onto an arbitrary target substrate C Martella, G Faraone, MH Alam, D Taneja, L Tao, G Scavia, E Bonera, ...
Advanced Functional Materials 30 (42), 2004546, 2020
31 2020 Two-Step Growth of Uniform Monolayer MoS2 Nanosheets by Metal–Organic Chemical Vapor Deposition S Chowdhury, A Roy, C Liu, MH Alam, R Ghosh, H Chou, D Akinwande, ...
ACS omega 6 (15), 10343-10351, 2021
25 2021 Wafer-scalable single-layer amorphous molybdenum trioxide MH Alam, S Chowdhury, A Roy, X Wu, R Ge, MA Rodder, J Chen, Y Lu, ...
ACS nano 16 (3), 3756-3767, 2022
21 2022 Direct growth of MH Alam, S Chowdhury, A Roy, MH Braga, SK Banerjee, D Akinwande
Physical Review Materials 5 (5), 054003, 2021
15 2021 Physics-based bias-dependent compact modeling of 1/f noise in single-to few-layer 2D-FETs N Mavredakis, A Pacheco-Sanchez, MH Alam, A Guimerà-Brunet, ...
Nanoscale 15 (14), 6853-6863, 2023
4 2023 Role of Hydrogen in Suppressing Secondary Nucleation in Chemical Vapor-Deposited MoS2 S Chowdhury, A Roy, MH Alam, T Pramanik, J Depoy, R Chrostowski, ...
ACS Applied Electronic Materials 4 (12), 6133-6141, 2022
4 2022 Inx Ga1−x Sb MOSFET: Performance analysis by self consistent CV characterization and direct tunneling gate leakage current MH Alam, IA Niaz, I Ahmed, Z Al Azim, N Chowdhury, QDM Khosru
2012 IEEE International Conference on Electro/Information Technology, 1-6, 2012
3 2012 Solid Electrolytic Substrates for High Performance Transistors and Circuits MH Alam, Z Xu, S Chowdhury, Z Jiang, D Taneja, SK Banerjee, K Lai, ...
78th Device Research Conference, 2020
2 2020 Performance analysis of InAs/AlSb MOS-HEMT by self-consistent capacitance-voltage characterization and direct tunneling gate leakage current I Ahmed, S Chowdhury, MH Alam, IA Niaz, QDM Khosru
ECS Transactions 72 (2), 189, 2016
2 2016 Effect of biaxial strain on structural and electronic properties of graphene/boron nitride hetero bi-layer structure MH Alam, KI Masood, QDM Khosru
8th International Conference on Electrical and Computer Engineering, 381-384, 2014
2 2014 Integration paths for Xenes G Faraone, MH Alam, X Xu, Z Dang, L Tao, D Akinwande, D Taneja
Xenes, 405-438, 2022
1 2022 Electric Field Tunable Band Gap in Bi-Axially Strained Graphene/Hexagonal Boron Nitride Super-Lattice KI Masood, MH Alam, QDM Khosru
227th ECS Meeting (May 24-28, 2015), 2015
1 2015 Low-Temperature Synthesis of WSe2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons SST Nibhanupudi, A Roy, S Chowdhury, R Schalip, MJ Coupin, ...
ACS Applied Materials & Interfaces 16 (17), 22326-22333, 2024
2024 Solid electrolyte substrates for two-dimensional transition metal dichalcogenide growth, transistors and circuits MH Alam
2021 Centimeter-Scale MoS2 on Solid Electrolyte Substrate by Sulfurization of Molybdenum Thin Film MH Alam, SST Nibhanupudi, SK Banerjee, D Akinwande
2021 IEEE 21st International Conference on Nanotechnology (NANO), 421-424, 2021
2021 Author Correction: Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers MH Alam, Z Xu, S Chowdhury, Z Jiang, D Taneja, SK Banerjee, K Lai, ...
Nature Communications 12, 2933, 2021
2021 A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect N Chowdhury, I Ahmed, Z Al Azim, MH Alam, IA Niaz, QDM Khosru
ECS Transactions 58 (16), 9, 2014
2014 Effect of biaxial strain on the performance of graphene/BN hetero bilayer based field effect transistor H Alam
Department of Electrical and Electronic Engineering (EEE), 2014
2014 
Deji AkinwandeThe University of Texas at Austin, IEEE, MRS, APS, AAS FellowE-mail megerősítve itt: ece.utexas.edu