Követés
Volker Türck
Volker Türck
Dr. Türck Ingenieurbüro GmbH
E-mail megerősítve itt: tuerck-ing.de - Kezdőlap
Cím
Hivatkozott rá
Hivatkozott rá
Év
Effect of random field fluctuations on excitonic transitions of individual CdSe quantum dots
V Türck, S Rodt, O Stier, R Heitz, R Engelhardt, UW Pohl, D Bimberg, ...
Physical Review B 61 (15), 9944, 2000
2792000
Rewritable photonic circuits
F Intonti, S Vignolini, V Türck, M Colocci, P Bettotti, L Pavesi, ...
Applied physics letters 89 (21), 2006
1602006
Chaotic behavior of a random laser with static disorder
S Mujumdar, V Türck, R Torre, DS Wiersma
Physical Review A—Atomic, Molecular, and Optical Physics 76 (3), 033807, 2007
1592007
Low-pressure metal organic chemical vapor deposition of GaN on silicon (111) substrates using an AlAs nucleation layer
A Strittmatter, A Krost, M Straßburg, V Türck, D Bimberg, J Bläsing, ...
Applied physics letters 74 (9), 1242-1244, 1999
1121999
Zero-dimensional excitons in (Zn, Cd) Se quantum structures
M Lowisch, M Rabe, B Stegemann, F Henneberger, M Grundmann, ...
Physical Review B 54 (16), R11074, 1996
831996
Radio frequency selective addressing of localized atoms in a periodic potential
H Ott, E De Mirandes, F Ferlaino, G Roati, V Türck, G Modugno, ...
Physical review letters 93 (12), 120407, 2004
662004
InGaAs quantum wires grown by low pressure metalorganic chemical vapor deposition on InP V‐grooves
M Kappelt, M Grundmann, A Krost, V Türck, D Bimberg
Applied physics letters 68 (25), 3596-3598, 1996
511996
Charged Excitons and Biexcitons in Self‐Organized CdSe Quantum Dots
V Türck, S Rodt, R Heitz, O Stier, M Strassburg, UW Pohl, D Bimberg
physica status solidi (b) 224 (1), 217-221, 2001
382001
High-gain excitonic lasing from a single InAs monolayer in bulk GaAs
AR Goni, M Stroh, C Thomsen, F Heinrichsdorff, V Türck, A Krost, ...
Applied physics letters 72 (12), 1433-1435, 1998
381998
Evolution strategies applied to least-squares curve fitting of spectroscopic data
Y Heiner, O Stier, V Türck, J Waschull, B Sumpf, A Ostermeier
Journal of Quantitative Spectroscopy and Radiative Transfer 56 (5), 769-782, 1996
321996
Lateral carrier transfer in quantum dot layers
S Rodt, V Türck, R Heitz, F Guffarth, R Engelhardt, UW Pohl, M Straßburg, ...
Physical Review B 67 (23), 235327, 2003
312003
Few‐Particle Effects in Self‐Organized Quantum Dots
S Rodt, A Schliwa, R Heitz, V Türck, O Stier, RL Sellin, M Straßburg, ...
physica status solidi (b) 234 (1), 354-367, 2002
312002
Laterally structured ZnCdSe/ZnSe superlattices by diffusion induced disordering
M Kuttler, M Strassburg, V Türck, R Heitz, UW Pohl, D Bimberg, E Kurtz, ...
Applied physics letters 69 (18), 2647-2649, 1996
311996
LP-MOCVD growth of GaN on silicon substrates—comparison between AlAs and ZnO nucleation layers
A Strittmatter, A Krost, V Türck, M Straßburg, D Bimberg, J Bläsing, ...
Materials Science and Engineering: B 59 (1-3), 29-32, 1999
261999
MOCVD of vertically stacked CdSe/ZnSSe quantum islands
UW Pohl, R Engelhardt, V Türck, D Bimberg
Journal of crystal growth 195 (1-4), 569-573, 1998
251998
Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices
M Strassburg, R Heitz, V Türck, S Rodt, UW Pohl, A Hoffmann, D Bimberg, ...
Journal of electronic materials 28, 506-514, 1999
231999
Line broadening and localization mechanisms in CdSe/ZnSe quantum dots
V Türck, S Rodt, O Stier, R Heitz, UW Pohl, R Engelhardt, D Bimberg
Journal of Luminescence 87, 337-340, 2000
222000
Interplay of surface charges and excitons localized in CdSe/ZnSe quantum dots
V Türck, S Rodt, R Heitz, O Stier, M Straßburg, UW Pohl, D Bimberg
Physica E: Low-dimensional Systems and Nanostructures 13 (2-4), 269-272, 2002
202002
Three-dimensionally confined excitons in MOCVD-grown ultrathin CdSe depositions in ZnSSe matrix
R Engelhardt, V Türck, UW Pohl, D Bimberg, P Veit
Journal of crystal growth 184, 311-314, 1998
201998
Optical identification of quantum dot types in CdSe/ZnSe structures
M Strassburg, T Deniozou, A Hoffmann, S Rodt, V Türck, R Heitz, ...
Journal of crystal growth 214, 756-760, 2000
172000
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