Novel applications of photonic band gap materials: Low‐loss bends and high Q cavities RD Meade, A Devenyi, JD Joannopoulos, OL Alerhand, DA Smith, K Kash
Journal of applied physics 75 (9), 4753-4755, 1994
451 1994 Optical spectroscopy of ultrasmall structures etched from quantum wells K Kash, A Scherer, JM Worlock, HG Craighead, MC Tamargo
Applied Physics Letters 49 (16), 1043-1045, 1986
406 1986 Synthesis, lattice structure, and band gap of ZnSnN2 PC Quayle, K He, J Shan, K Kash
MRS Communications 3 (3), 135-138, 2013
164 2013 Optical properties of III–V semiconductor quantum wires and dots K Kash
Journal of luminescence 46 (2), 69-82, 1990
162 1990 Observation of quantum confinement by strain gradients K Kash, BP Van der Gaag, DD Mahoney, AS Gozdz, LT Florez, ...
Physical review letters 67 (10), 1326, 1991
146 1991 Carrier energy relaxation in In0. 53Ga0. 47As determined from picosecond luminescence studies K Kash, J Shah
Applied physics letters 45 (4), 401-403, 1984
145 1984 Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures K Kash, JM Worlock, P Grabbe, JP Harbison, MD Sturge
Applied physics letters 53 (9), 782-784, 1988
134 1988 Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule PC Quayle, EW Blanton, A Punya, GT Junno, K He, L Han, H Zhao, ...
physical review B 91 (20), 205207, 2015
130 2015 Long-lived spatially indirect excitons in coupled GaAs/ JE Golub, K Kash, JP Harbison, LT Florez
Physical Review B 41 (12), 8564, 1990
126 1990 Luminescence characteristics of quantum wires grown by organometallic chemical vapor deposition on nonplanar substrates E Kapon, K Kash, EM Clausen Jr, DM Hwang, E Colas
Applied physics letters 60 (4), 477-479, 1992
109 1992 Picosecond luminescence measurements of hot carrier relaxation in III–V semiconductors using sum frequency generation K Kash, J Shah, D Block, AC Gossard, W Wiegmann
Physica B+ C 134 (1-3), 189-198, 1985
109 1985 Strain‐induced confinement of carriers to quantum wires and dots within an InGaAs‐InP quantum well K Kash, R Bhat, DD Mahoney, PSD Lin, A Scherer, JM Worlock, ...
Applied physics letters 55 (7), 681-683, 1989
104 1989 Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources K Du, C Bekele, CC Hayman, JC Angus, P Pirouz, K Kash
Journal of Crystal Growth 310 (6), 1057-1061, 2008
103 2008 Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications R Bhat, MA Koza, K Kash, SJ Allen, WP Hong, SA Schwarz, GK Chang, ...
Journal of crystal growth 108 (3-4), 441-448, 1991
91 1991 Aluminum ion‐implantation enhanced intermixing of GaAs‐AlGaAs quantum‐well structures K Kash, B Tell, P Grabbe, EA Dobisz, HG Craighead, MC Tamargo
Journal of applied physics 63 (1), 190-194, 1988
84 1988 Electrochemical pinning of the Fermi level: mediation of photoluminescence from gallium nitride and zinc oxide V Chakrapani, C Pendyala, K Kash, AB Anderson, MK Sunkara, JC Angus
Journal of the American Chemical Society 130 (39), 12944-12952, 2008
79 2008 Low pressure synthesis of bulk, polycrystalline gallium nitride A Argoitia, CC Hayman, JC Angus, L Wang, JS Dyck, K Kash
Applied Physics Letters 70 (2), 179-181, 1997
77 1997 Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells L Han, K Kash, H Zhao
Journal of Applied Physics 120 (10), 2016
65 2016 Measurement of nonradiative Auger and radiative recombination rates in strained‐layer quantum‐well systems MC Wang, K Kash, CE Zah, R Bhat, SL Chuang
Applied physics letters 62 (2), 166-168, 1993
65 1993 Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces E Colas, E Kapon, S Simhony, HM Cox, R Bhat, K Kash, PSD Lin
Applied physics letters 55 (9), 867-869, 1989
65 1989 