Epitaxial growth of single-orientation high-quality MoS2 monolayers H Bana, E Travaglia, L Bignardi, P Lacovig, CE Sanders, M Dendzik, ...
2D Materials 5 (3), 035012, 2018
82 2018 Novel single-layer vanadium sulphide phases F Arnold, RM Stan, SK Mahatha, HE Lund, D Curcio, M Dendzik, H Bana, ...
2D Materials 5 (4), 045009, 2018
59 2018 Doping Graphene with Substitutional Mn PC Lin, R Villarreal, S Achilli, H Bana, MN Nair, A Tejeda, K Verguts, ...
ACS Nano 15 (3), 5449-5458, 2021
39 2021 Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal α-Sn I Madarevic, U Thupakula, G Lippertz, N Claessens, PC Lin, H Bana, ...
Apl Materials 8 (3), 2020
33 2020 Spin-dependent electron-phonon coupling in the valence band of single-layer NF Hinsche, AS Ngankeu, K Guilloy, SK Mahatha, A Grubišić Čabo, ...
Physical Review B 96 (12), 121402, 2017
31 2017 Growth and structure of singly oriented single-layer tungsten disulfide on Au (111) L Bignardi, D Lizzit, H Bana, E Travaglia, P Lacovig, CE Sanders, ...
Physical Review Materials 3 (1), 014003, 2019
30 2019 Breakdown of Universal Scaling for Nanometer-Sized Bubbles in Graphene R Villarreal, PC Lin, F Faraji, N Hassani, H Bana, Z Zarkua, MN Nair, ...
Nano Letters 21 (19), 8103-8110, 2021
28 2021 The adsorption of silicon on an iridium surface ruling out silicene growth M Satta, P Lacovig, N Apostol, M Dalmiglio, F Orlando, L Bignardi, H Bana, ...
Nanoscale 10 (15), 7085-7094, 2018
17 2018 Bond Defects in Graphene Created by Ultralow Energy Ion Implantation R Villarreal, PC Lin, Z Zarkua, H Bana, HC Tsai, M Auge, F Junge, ...
Available at SSRN 4191316, 2022
13 2022 Thermal Annealing of Graphene Implanted with Mn at Ultralow Energies: From Disordered and Contaminated to Nearly Pristine Graphene PC Lin, R Villarreal, H Bana, Z Zarkua, V Hendriks, HC Tsai, M Auge, ...
The Journal of Physical Chemistry C, 2022
11 2022 Electron–phonon coupling in single-layer MoS2 SK Mahatha, AS Ngankeu, NF Hinsche, I Mertig, K Guilloy, PL Matzen, ...
Surface Science 681, 64-69, 2019
11 2019 Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag (110) L Bignardi, SK Mahatha, D Lizzit, H Bana, E Travaglia, P Lacovig, ...
Nanoscale 13 (44), 18789-18798, 2021
9 2021 Periodic modulation of graphene by a 2D-FeO/Ir (111) Moire interlayer Y Ma, E Travaglia, H Bana, L Bignardi, P Lacovig, S Lizzit, M Batzill
The Journal of Physical Chemistry C 121 (5), 2762-2770, 2017
6 2017 Backside Power Delivery with relaxed overlay for backside patterning using extreme wafer thinning and Molybdenum-filled slit nano Through Silicon Vias P Zhao, L Witters, A Jourdain, M Stucchi, N Jourdan, JW Maes, H Bana, ...
IEEE Transactions on Electron Devices, 2024
2024 DRAM-Peri FinFET-A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAM J Ganguly, H Arimura, R Ritzenthaler, H Bana, JW Maes, JG Lai, S Brus, ...
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024
2024 Synthesis of Few-Layered Transition-Metal Dichalcogenides by Ion Implantation of Chalcogen and Metal Species into Sapphire R Bude, I Verschueren, I Florea, JL Maurice, P Legagneux, LMC Pereira, ...
ACS omega 8 (32), 29475-29484, 2023
2023 Correction to Doping Graphene with Substitutional Mn PC Lin, R Villarreal, S Achilli, H Bana, MN Nair, A Tejeda, K Verguts, ...
ACS nano 16 (3), 4974-4974, 2022
2022 Structural and Electronic Properties of Mn Implanted MoS2 H Bana
Graphene 2021 contributed abstract, 2021
2021 Growth and characterization of singly-oriented single-layer transition metal dichalcogenides on Au (111) H Bana
Graphene 2020 (online) contributed talk abstract, 2020
2020 Realization of Vanadium Sulfide Compounds in the 2D Limit C Sanders, F Arnold, R Stan, A Bruix, S Mahatha, H Lund, M Dendzik, ...
Bulletin of the American Physical Society, 2018
2018 