| Biomass-directed synthesis of 20 g high-quality boron nitride nanosheets for thermoconductive polymeric composites XB Wang, Q Weng, X Wang, X Li, J Zhang, F Liu, XF Jiang, H Guo, N Xu, ... Acs Nano 8 (9), 9081-9088, 2014 | 165 | 2014 |
| Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films X Gao, Y Xia, J Ji, H Xu, Y Su, H Li, C Yang, H Guo, J Yin, Z Liu Applied Physics Letters 97 (19), 2010 | 68 | 2010 |
| Enabling Photoemission Electron Microscopy in Liquids via Graphene-Capped Microchannel Arrays Hongxuan Guo, Evgheni Strelcov, Alexander Yulaev, Jian Wang, Narayana ... Nano Letters 17 (2), 1034–1041, 2017 | 66 | 2017 |
| The resistive switching mechanism of Ag/SrTiO3/Pt memory cells XB Yan, K Li, J Yin, YD Xia, HX Guo, L Chen, ZG Liu Electrochemical and Solid-State Letters 13 (3), H87, 2010 | 58 | 2010 |
| Graphene composites with dental and biomedical applicability S Malik, FM Ruddock, AH Dowling, K Byrne, W Schmitt, I Khalakhan, ... Beilstein Journal of Nanotechnology 9 (1), 801-808, 2018 | 52 | 2018 |
| Memristive behaviors of LiNbO3 ferroelectric diodes H Li, Y Xia, B Xu, H Guo, J Yin, Z Liu Applied Physics Letters 97 (1), 2010 | 51 | 2010 |
| Graphene microcapsule arrays for combinatorial electron microscopy and spectroscopy in liquids A Yulaev, H Guo, E Strelcov, L Chen, I Vlassiouk, A Kolmakov ACS applied materials & interfaces 9 (31), 26492-26502, 2017 | 36 | 2017 |
| Nanoscale mapping of the double layer potential at the graphene–electrolyte interface E Strelcov, C Arble, H Guo, BD Hoskins, A Yulaev, IV Vlassiouk, ... Nano Letters 20 (2), 1336-1344, 2020 | 35 | 2020 |
| Resistive switching devices based on nanocrystalline solid electrolyte (AgI) 0.5 (AgPO3) 0.5 HX Guo, B Yang, L Chen, YD Xia, KB Yin, ZG Liu, J Yin Applied Physics Letters 91 (24), 2007 | 35 | 2007 |
| Interfacial electrochemistry in liquids probed with photoemission electron microscopy S Nemsak, E Strelcov, T Duchoň, H Guo, J Hackl, A Yulaev, I Vlassiouk, ... Journal of the American Chemical Society 139 (50), 18138-18141, 2017 | 34 | 2017 |
| Virtual substrate method for nanomaterials characterization B Da, J Liu, M Yamamoto, Y Ueda, K Watanabe, NT Cuong, S Li, ... Nature communications 8 (1), 15629, 2017 | 30 | 2017 |
| Unipolar resistive switching characteristics in Co3O4 films X Gao, H Guo, Y Xia, J Yin, Z Liu Thin Solid Films 519 (1), 450-452, 2010 | 30 | 2010 |
| Unipolar resistive switching behaviors in amorphous lutetium oxide films X Gao, Y Xia, B Xu, J Kong, H Guo, K Li, H Li, H Xu, K Chen, J Yin, Z Liu Journal of Applied Physics 108 (7), 2010 | 29 | 2010 |
| Conduction behavior change in amorphous LaLuO3 dielectrics based on correlated barrier hopping theory K Li, Y Xia, B Xu, X Gao, H Guo, Z Liu, J Yin Applied Physics Letters 96 (18), 2010 | 27 | 2010 |
| Characterization of two-dimensional hexagonal boron nitride using scanning electron and scanning helium ion microscopy H Guo, J Gao, N Ishida, M Xu, D Fujita Applied Physics Letters 104 (3), 2014 | 26 | 2014 |
| The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes HX Guo, LG Gao, YD Xia, K Jiang, B Xu, ZG Liu, J Yin Applied Physics Letters 94 (15), 2009 | 26 | 2009 |
| Characterization of RbAg4I5 films prepared by pulsed laser deposition B Yang, XF Liang, HX Guo, KB Yin, J Yin, ZG Liu Journal of Physics D: Applied Physics 41 (11), 115304, 2008 | 23 | 2008 |
| Bipolar resistive switching performance of the nonvolatile memory cells based on (AgI) 0.2 (Ag2MoO4) 0.8 solid electrolyte films XB Yan, J Yin, HX Guo, Y Su, B Xu, HT Li, DW Yan, YD Xia, ZG Liu Journal of Applied Physics 106 (5), 2009 | 21 | 2009 |
| In aqua electrochemistry probed by XPEEM: experimental setup, examples, and challenges S Nemšák, E Strelcov, H Guo, BD Hoskins, T Duchoň, DN Mueller, ... Topics in Catalysis 61, 2195-2206, 2018 | 17 | 2018 |
| Permeation through graphene ripples T Liang, G He, X Wu, J Ren, H Guo, Y Kong, H Iwai, D Fujita, H Gao, ... 2D Materials 4 (2), 025010, 2017 | 14 | 2017 |
Andrei KolmakovNISTE-mail megerősítve itt: nist.gov
