Követés
Matthias Gottwald
Matthias Gottwald
IBM - TJ Watson Research Center
E-mail megerősítve itt: us.ibm.com
Cím
Hivatkozott rá
Hivatkozott rá
Év
Engineered materials for all-optical helicity-dependent magnetic switching
S Mangin, M Gottwald, CH Lambert, D Steil, V Uhlíř, L Pang, M Hehn, ...
Nature materials 13 (3), 286-292, 2014
7002014
Light-induced magnetization reversal of high-anisotropy TbCo alloy films
S Alebrand, M Gottwald, M Hehn, D Steil, M Cinchetti, D Lacour, ...
Applied Physics Letters 101 (16), 2012
2252012
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang
US Patent 20170186942A1, 2017
1102017
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang
US Patent 9,634,237, 2017
1072017
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang
US Patent 9,634,237, 2017
1072017
Strong perpendicular magnetic anisotropy in Ni/Co (111) single crystal superlattices
S Girod, M Gottwald, S Andrieu, S Mangin, J McCord, EE Fullerton, ...
Applied Physics Letters 94 (26), 2009
792009
Subpicosecond magnetization dynamics in TbCo alloys
S Alebrand, U Bierbrauer, M Hehn, M Gottwald, O Schmitt, D Steil, ...
Physical Review B 89 (14), 144404, 2014
742014
Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications
Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015
722015
Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM
M Gottwald, JJ Kan, K Lee, X Zhu, C Park, SH Kang
Applied Physics Letters 106 (3), 2015
692015
Co/Ni multilayers for spintronics: High spin polarization and tunable magnetic anisotropy
S Andrieu, T Hauet, M Gottwald, A Rajanikanth, L Calmels, AM Bataille, ...
Physical Review Materials 2 (6), 064410, 2018
652018
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
G Hu, JJ Nowak, MG Gottwald, SL Brown, B Doris, CP D’Emic, P Hashemi, ...
2019 IEEE International Electron Devices Meeting (IEDM), 2.6. 1-2.6. 4, 2019
592019
Co/Ni (111) superlattices studied by microscopy, x-ray absorption, and ab initio calculations
M Gottwald, S Andrieu, F Gimbert, E Shipton, L Calmels, C Magen, ...
Physical Review B 86 (1), 014425, 2012
572012
Magnetoresistive effects in perpendicularly magnetized Tb-Co alloy based thin films and spin valves
M Gottwald, M Hehn, F Montaigne, D Lacour, G Lengaigne, S Suire, ...
Journal of Applied Physics 111 (8), 2012
572012
Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond
C Park, JJ Kan, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.2. 1-26.2. 4, 2015
492015
Ultra-thin Co/Pd multilayers with enhanced high-temperature annealing stability
M Gottwald, K Lee, JJ Kan, B Ocker, J Wrona, S Tibus, J Langer, SH Kang, ...
Applied Physics Letters 102 (5), 2013
482013
State diagram of nanopillar spin valves with perpendicular magnetic anisotropy
S Le Gall, J Cucchiara, M Gottwald, C Berthelot, CH Lambert, Y Henry, ...
Physical Review B 86 (1), 014419, 2012
382012
2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction
G Hu, G Lauer, JZ Sun, P Hashemi, C Safranski, SL Brown, L Buzi, ...
2021 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2021
302021
Double spin-torque magnetic tunnel junction devices for last-level cache applications
G Hu, C Safranski, JZ Sun, P Hashemi, SL Brown, J Bruley, L Buzi, ...
2022 International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2022
262022
Paramagnetic FexTa1-x alloys for engineering of perpendicularly magnetized tunnel junctions
M Gottwald, JJ Kan, K Lee, SH Kang, EE Fullerton
APL Materials 1 (2), 2013
252013
Asymmetric magnetization reversal in dipolarly coupled spin valve structures with perpendicular magnetic anisotropy
M Gottwald, M Hehn, D Lacour, T Hauet, F Montaigne, S Mangin, ...
Physical Review B 85 (6), 064403, 2012
242012
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