Deep-level optical spectroscopy investigation of N-doped TiO2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga
Applied Physics Letters 86 (13), 132104-132104-3, 2005
244 2005 Optical bandgap widening of p-type Cu2O films by nitrogen doping Y Nakano, S Saeki, T Morikawa
Applied Physics Letters 94 (2), 2009
213 2009 Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga
Applied physics letters 88 (17), 172103-172103-3, 2006
145 2006 Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
135 2004 Electrical characterization of band gap states in C-doped TiO2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga
Applied Physics Letters 87 (5), 052111-052111-3, 2005
108 2005 Interface properties of thermally oxidized n -GaN metal–oxide–semiconductor capacitors Y Nakano, T Jimbo
Applied physics letters 82 (2), 218-220, 2003
103 2003 III-V hemt devices M Sugimoto, T Kachi, Y Nakano, T Uesugi, H Ueda, N Soejima
US Patent 7,777,252, 2010
85 2010 Electrical activation characteristics of silicon-implanted GaN Y Irokawa, O Fujishima, T Kachi, Y Nakano
Journal of applied physics 97 (8), 083505-083505-5, 2005
81 2005 Microstructure and Related Phenomena of Multilayer Ceamic Capacitors with Ni-Electrode Y Nakano
J. Amer. Ceram. Soc. 32, 119-128, 1993
81 1993 Origin of visible-light sensitivity in N-doped TiO2 films Y Nakano, T Morikawa, T Ohwaki, Y Taga
Chemical Physics 339 (1), 20-26, 2007
79 2007 Visible-blind wide-dynamic-range fast-response self-powered ultraviolet photodetector based on CuI/In-Ga-Zn-O heterojunction N Yamada, Y Kondo, X Cao, Y Nakano
Applied Materials Today 15, 153-162, 2019
70 2019 OXYGEN ADSORPTION AND VDR EFFECT IN(Sr, Ca) TiO3-x BASED CERAMICS Y Nakano, N Ichinose
Journal of Materials Research 5 (12), 2910-2922, 1990
69 1990 Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers Y Nakano, T Kachi, T Jimbo
Applied physics letters 83 (21), 4336-4338, 2003
62 2003 Group III nitride semiconductor device T Kachi, Y Nakano, T Uesugi
US Patent 7,211,839, 2007
58 2007 Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams A Uedono, K Ito, H Nakamori, K Mori, Y Nakano, T Kachi, S Ishibashi, ...
Journal of Applied Physics 102 (8), 2007
51 2007 Interface properties of SiO2/n-GaN metal–insulator–semiconductor structures Y Nakano, T Jimbo
Applied physics letters 80 (25), 4756-4758, 2002
49 2002 Deep-level optical spectroscopy investigation of band gap states in AlGaN/GaN hetero-interfaces Y Nakano, Y Irokawa, M Takeguchi
Applied physics express 1 (9), 091101, 2008
48 2008 Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering Y Nakano, T Morikawa, T Ohwaki, Y Taga
Applied Physics Letters 87 (23), 2005
47 2005 Electrical characterization of acceptor levels in Mg-doped GaN Y Nakano, T Jimbo
Journal of applied physics 92 (9), 5590-5592, 2002
44 2002 Database management method and database management apparatus Y Nakano, T Nakazawa, N Ito
US Patent 7,908,245, 2011
42 2011 