Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ... Nano letters 17 (7), 4373-4380, 2017 | 106 | 2017 |
Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016 | 94 | 2016 |
Band-offset engineering for GeSn-SiGeSn hetero tunnel FETs and the role of strain S Sant, A Schenk IEEE Journal of the Electron Devices Society 3 (3), 164-175, 2015 | 72 | 2015 |
Methods to enhance the performance of InGaAs/InP heterojunction tunnel FETs S Sant, A Schenk IEEE Transactions on Electron Devices 63 (5), 2169-2175, 2015 | 71 | 2015 |
Lateral InAs/Si p-type tunnel FETs integrated on Si—part 1: experimental devices KE Moselund, D Cutaia, H Schmid, M Borg, S Sant, A Schenk, H Riel IEEE Transactions on Electron Devices 63 (11), 4233-4239, 2016 | 49 | 2016 |
Pseudopotential calculations of strained-GeSn/SiGeSn hetero-structures S Sant, A Schenk Applied Physics Letters 105 (16), 2014 | 49 | 2014 |
Band gap bowing and band offsets in relaxed and strained Si1− xGex alloys by employing a new nonlinear interpolation scheme S Sant, S Lodha, U Ganguly, S Mahapatra, FO Heinz, L Smith, V Moroz, ... Journal of Applied Physics 113 (3), 2013 | 49 | 2013 |
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy M Borg, L Gignac, J Bruley, A Malmgren, S Sant, C Convertino, ... Nanotechnology 30 (8), 084004, 2018 | 41 | 2018 |
InGaAs-on-insulator FinFETs with reduced off-current and record performance C Convertino, C Zota, S Sant, F Eltes, M Sousa, D Caimi, A Schenk, ... 2018 IEEE International Electron Devices Meeting (IEDM), 39.2. 1-39.2. 4, 2018 | 37 | 2018 |
Manipulating surface states of III–V nanowires with uniaxial stress G Signorello, S Sant, N Bologna, M Schraff, U Drechsler, H Schmid, ... Nano letters 17 (5), 2816-2824, 2017 | 36 | 2017 |
The effect of density-of-state tails on band-to-band tunneling: Theory and application to tunnel field effect transistors S Sant, A Schenk Journal of Applied Physics 122 (13), 2017 | 31 | 2017 |
Impact of trap-assisted tunneling and channel quantization on InAs/Si hetero tunnel FETs S Sant, A Schenk, K Moselund, H Riel 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 30 | 2016 |
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance H Hahn, V Deshpande, E Caruso, S Sant, E O'Connor, Y Baumgartner, ... 2017 IEEE International Electron Devices Meeting (IEDM), 17.5. 1-17.5. 4, 2017 | 24 | 2017 |
III–V-based hetero tunnel FETs: A simulation study with focus on non-ideality effects A Schenk, S Sant, K Moselund, H Riel 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 18 | 2016 |
Tunneling between density-of-state tails: Theory and effect on Esaki diodes A Schenk, S Sant Journal of applied physics 128 (1), 2020 | 17 | 2020 |
Trap-tolerant device geometry for InAs/Si pTFETs S Sant, A Schenk IEEE Electron Device Letters 38 (10), 1363-1366, 2017 | 14 | 2017 |
Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In0.53Ga0.47As Ultrathin-Body MOSFETs and Mitigation Measures S Sant, P Aguirre, H Hahn, V Deshpande, L Czornomaz, A Schenk IEEE Transactions on Electron Devices 65 (6), 2578-2584, 2018 | 12 | 2018 |
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si tunnel FETs A Schenk, S Sant, K Moselund, H Riel 2017 17th International Workshop on Junction Technology (IWJT), 27-30, 2017 | 12 | 2017 |
Comparative simulation study of InAs/Si and All-III-V hetero tunnel FETs A Schenk, S Sant, K Moselund, H Riel ECS Transactions 66 (5), 157, 2015 | 12 | 2015 |
Ultra-thin III-V photodetectors epitaxially integrated on si with bandwidth exceeding 25 GHz S Mauthe, Y Baumgartner, S Sant, Q Ding, M Sousa, L Czornomaz, ... 2020 Optical Fiber Communications Conference and Exhibition (OFC), 1-3, 2020 | 11 | 2020 |