hiroyuki kanaya

hiroyuki kanaya

Toshiba
Dirujuk 2236 kali
MRAM STT RAM FeRAM emerging memory
Youngin Goh

Youngin Goh

KAIST 전기 및 전자공학부 박사
Email yang diverifikasi di kaist.ac.kr
Dirujuk 1259 kali
Ferroelectric materials FeRAM HfO2-based ferroelectric tunnel junction
Jun Okuno

Jun Okuno

SONY
Email yang diverifikasi di sony.com
Dirujuk 1071 kali
FeRAM Compute in Memory CMOS image sensor Transistor Biosensor
Taeho Kim

Taeho Kim

Ph. D. candidate at Korea Advanced Institute of Science and Technology
Email yang diverifikasi di kaist.ac.kr
Dirujuk 938 kali
FeRAM Ferroelectric Negative Capacitance NCFET TFT
Tao Zeng

Tao Zeng

National University of Singapore
Email yang diverifikasi di nus.edu.sg
Dirujuk 896 kali
Memristor RRAM FeRAM Synaptic emulation Neuromorphic computing
Alireza Kashir

Alireza Kashir

Principal Engineer at Ferroelectric Memory GmbH
Email yang diverifikasi di ferroelectric-memory.com
Dirujuk 708 kali
HfO2 Ferroelectrics Multiferroics FeRAM
Kuo-Yu Hsiang

Kuo-Yu Hsiang

Department of Electronics Engineering and Institute of Electronics, National Yang Ming …
Email yang diverifikasi di nycu.edu.tw
Dirujuk 563 kali
(Anti)-ferroelectric HfZrO2 FeFET FeRAM FTJ
Yingxin Chen

Yingxin Chen

Hangzhou Dianzi University, Nanjing Unverisity, University of Wisconsin-Madison
Email yang diverifikasi di hdu.edu.cn
Dirujuk 551 kali
Ferroelectric materials Piezoelectric materials Delectric capacitor FeRAM Wireless Neurostimulation
Fei Huang

Fei Huang

Stanford University
Email yang diverifikasi di stanford.edu
Dirujuk 477 kali
FERAM Electronic Materials & Devices
Md. Aftab Baig

Md. Aftab Baig

imec
Email yang diverifikasi di imec.be
Dirujuk 413 kali
Memory Devices and Circuits (MRAM FeRAM) Design Technology Co-Optimization Neuromorphic Computing
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