Ikuti
Anna Maria Szekeres
Anna Maria Szekeres
Institute of Solid State Physics, Bulgarian Academy of Sciences
Email yang diverifikasi di issp.bas.bg
Judul
Dikutip oleh
Dikutip oleh
Tahun
Optical properties of chemical vapor deposited thin films of molybdenum and tungsten based metal oxides
K Gesheva, A Szekeres, T Ivanova
Solar energy Materials and Solar cells 76 (4), 563-576, 2003
1982003
Evaluation of basic physical parameters of quaternary Ge–Sb-(S, Te) chalcogenide glasses
V Pamukchieva, A Szekeres, K Todorova, M Fabian, E Svab, Z Revay, ...
Journal of non-crystalline solids 355 (50-51), 2485-2490, 2009
852009
Structure and optical properties of CVD molybdenum oxide films for electrochromic application
T Ivanova, K Gesheva, A Szekeres
Journal of Solid State Electrochemistry 7, 21-24, 2002
802002
Structural transformations and their relation to the optoelectronic properties of chromium oxide thin films
T Ivanova, K Gesheva, A Cziraki, A Szekeres, E Vlaikova
Journal of Physics: Conference Series 113 (1), 012030, 2008
702008
Structural and optical properties of CVD thin tungsten oxide films
D Gogova, K Gesheva, A Szekeres, M Sendova‐Vassileva
physica status solidi (a) 176 (2), 969-984, 1999
681999
Spectroscopic ellipsometry study of CVD molybdenum oxide films: effect of temperature
A Szekeres, T Ivanova, K Gesheva
Journal of Solid State Electrochemistry 7, 17-20, 2002
622002
Crystallization of chemically vapor deposited molybdenum and mixed tungsten/molybdenum oxide films for electrochromic application
KA Gesheva, A Cziraki, T Ivanova, A Szekeres
Thin Solid Films 515 (11), 4609-4613, 2007
582007
Spectroscopic characterization of CVD-molybdenum oxide films
T Ivanova, A Szekeres, M Gartner, D Gogova, KA Gesheva
Electrochimica acta 46 (13-14), 2215-2219, 2001
572001
Study of the surface roughness of CVD-tungsten oxide thin films
RE Tanner, A Szekeres, D Gogova, K Gesheva
Applied surface science 218 (1-4), 163-169, 2003
492003
Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis
F Hamelmann, U Heinzmann, A Szekeres, N Kirov, T Nikolova
Journal of Optoelectronics and Advanced Materials 7 (1), 389-392, 2005
472005
Structural characterization of AlN films synthesized by pulsed laser deposition
A Szekeres, Z Fogarassy, P Petrik, E Vlaikova, A Cziraki, G Socol, ...
Applied Surface Science 257 (12), 5370-5374, 2011
442011
Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices
A Szekeres, T Nikolova, S Simeonov, A Gushterov, F Hamelmann, ...
Microelectronics journal 37 (1), 64-70, 2006
382006
The effect of O2 plasma on properties of the SiSiO2 system
A Szekeres, S Alexandrova, K Kirov
physica status solidi (a) 62 (2), 727-736, 1980
351980
Influence of in situ nitrogen pressure on crystallization of pulsed laser deposited AlN films
S Bakalova, A Szekeres, A Cziraki, CP Lungu, S Grigorescu, G Socol, ...
Applied surface science 253 (19), 8215-8219, 2007
332007
Plasma photoresist stripping in a planar reactor
A Szekeres, K Kirov, S Alexandrova
physica status solidi (a) 63 (1), 371-374, 1981
311981
Optical and electrochromic characterization of multilayered mixed metal oxide thin films
F Hamelmann, K Gesheva, T Ivanova, A Szekeres, M Abroshev, ...
J. Optoelectron. Adv. Mater 7, 393-396, 2005
302005
Compositional dependence of the optical properties of new quaternary chalcogenide glasses of Ge–Sb–(S, Te) system
V Pamukchieva, A Szekeres, K Todorova, E Svab, M Fabian
Optical Materials 32 (1), 45-48, 2009
292009
Optical properties of GexSb20− xTe80 thin films and their changes by light illumination
V Pamukchieva, A Szekeres
Optical Materials 30 (7), 1088-1092, 2008
292008
Enhanced gas sensing of Au nanocluster-doped or-coated zinc oxide thin films
G Socol, E Axente, C Ristoscu, F Sima, A Popescu, N Stefan, ...
Journal of Applied Physics 102 (8), 2007
272007
Silicon nanoparticles in thermally annealed thin silicon monoxide films
A Szekeres, T Nikolova, A Paneva, A Cziraki, GJ Kovacs, I Lisovskyy, ...
Materials Science and Engineering: B 124, 504-507, 2005
262005
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