Christopher M. Neumann

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Eric PopPease-Ye Professor of Electrical Engineering, MSE, AP at Stanford & SLACEmail yang diverifikasi di stanford.edu
Eilam YalonTechnion, Israel Institute of TechnologyEmail yang diverifikasi di technion.ac.il
H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityEmail yang diverifikasi di stanford.edu
Scott W. FongStanford UniversityEmail yang diverifikasi di stanford.edu
Kenneth E. GoodsonStanford Mechanical Engineering, Davies Provostial ProfessorEmail yang diverifikasi di stanford.edu
Aditya SoodAssistant Professor, Princeton UniversityEmail yang diverifikasi di stanford.edu
Feng XiongAssociate Professor, Department of Electrical and Computer Engineering, University of PittsburghEmail yang diverifikasi di pitt.edu
Dr. Miguel Muñoz Rojo - ERC granteeTenured permanent researcher (CSIC) & Associate Prof. (University of Twente)Email yang diverifikasi di csic.es
Connor J. McClellanStanford UniversityEmail yang diverifikasi di stanford.edu
Saurabh V. SuryavanshiSynopsysEmail yang diverifikasi di suryavanshi.me
Ethan C. Ahn, Ph.D.Faculty of Electrical Engineering at George Mason UniversityEmail yang diverifikasi di gmu.edu
Mehdi AsheghiAdjunct Professor of Mechanical Engineerig, Stanford UniversityEmail yang diverifikasi di stanford.edu
Ashkan BehnamDevice Engineer, MicronEmail yang diverifikasi di micron.com
Sanchit DeshmukhPhD, Stanford UniversityEmail yang diverifikasi di alumni.stanford.edu
Runjie (Lily) XuStanford UniversityEmail yang diverifikasi di apple.com
Feifei LianStanford UniversityEmail yang diverifikasi di stanford.edu
Seunghyun LeeProfessor, Dept. of Electrical Engineering, Kyung Hee UniversityEmail yang diverifikasi di khu.ac.kr
Sharnali IslamUniversity of DhakaEmail yang diverifikasi di du.ac.bd
Myung-Ho BaeKorea Research Institute of Standards and Science, [email protected]Email yang diverifikasi di kriss.re.kr
Christopher J. BrennanUniversity of Texas at AustinEmail yang diverifikasi di utexas.edu

Ikuti

Christopher M. Neumann

Intel

Email yang diverifikasi di intel.com

Memory 2D Materials Semiconductors Nanotechnology


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Phase-Change Memory—Towards a Storage-Class Memory SW Fong, CM Neumann, HSP Wong IEEE Transactions on Electron Devices 64 (11), 4374-4385, 2017	440	2017
Energy Dissipation in Monolayer MoS2 Electronics E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ... Nano Letters 17 (6), 3429–3433, 2017	241	2017
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS₂ by Raman Thermometry E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ... ACS applied materials & interfaces 9 (49), 43013-43020, 2017	189	2017
Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier C Ahn, SW Fong, Y Kim, S Lee, A Sood, CM Neumann, M Asheghi, ... Nano letters 15 (10), 6809-6814, 2015	171	2015
Transport in nanoribbon interconnects obtained from graphene grown by chemical vapor deposition A Behnam, AS Lyons, MH Bae, EK Chow, S Islam, CM Neumann, E Pop Nano letters 12 (9), 4424-4430, 2012	151	2012
Spatially resolved thermometry of resistive memory devices E Yalon, S Deshmukh, MM Rojo, F Lian, CM Neumann, F Xiong, E Pop Scientific Reports 7 (1), 15360, 2017	70	2017
Stanford memory trends HSP Wong, C Ahn, J Cao, HY Chen, SW Fong, Z Jiang, C Neumann, ... tech. report, 2016	60	2016
Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2 CM Neumann, KL Okabe, E Yalon, RW Grady, HSP Wong, E Pop Applied Physics Letters 114 (8), 2019	53	2019
Understanding the switching mechanism of interfacial phase change memory KL Okabe, A Sood, E Yalon, CM Neumann, M Asheghi, E Pop, ... Journal of Applied Physics 125 (18), 2019	46	2019
Towards ultimate scaling limits of phase-change memory F Xiong, E Yalon, A Behnam, CM Neumann, KL Grosse, S Deshmukh, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2016	43	2016
Dual-Layer Dielectric Stack for Thermally Isolated Low-Energy Phase-Change Memory SW Fong, CM Neumann, E Yalon, MM Rojo, E Pop, HSP Wong IEEE Transactions on Electron Devices 64 (11), 4496-4502, 2017	39	2017
FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory SC Chang, N Haratipour, S Shivaraman, C Neumann, S Atanasov, J Peck, ... 2021 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2021	37	2021
Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates CJ Brennan, CM Neumann, SA Vitale Journal of Applied Physics 118 (4), 2015	22	2015
Hafnia-Based FeRAM: A Path Toward Ultra-High Density for Next-Generation High-Speed Embedded Memory N Haratipour, SC Chang, S Shivaraman, C Neumann, YC Liao, ... 2022 International Electron Devices Meeting (IEDM), 6.7. 1-6.7. 4, 2022	21	2022
Uncovering Phase Change Memory Energy Limits by Sub‐Nanosecond Probing of Power Dissipation Dynamics K Stern, N Wainstein, Y Keller, CM Neumann, E Pop, S Kvatinsky, E Yalon Advanced Electronic Materials 7 (8), 2100217, 2021	16	2021
Graphene-based electromechanical thermal switches ME Chen, MM Rojo, F Lian, J Koeln, A Sood, SM Bohaichuk, ... 2D Materials 8 (3), 035055, 2021	14	2021
Sub-Nanosecond Pulses Enable Partial Reset for Analog Phase Change Memory K Stern, N Wainstein, Y Keller, CM Neumann, E Pop, S Kvatinsky, E Yalon IEEE Electron Device Letters 42 (9), 1291-1294, 2021	13	2021
Molybdenum oxide on carbon nanotube: Doping stability and correlation with work function RS Park, HJK Kim, G Pitner, C Neumann, S Mitra, HSP Wong Journal of Applied Physics 128 (4), 2020	8	2020
Stateful Logic Using Phase Change Memory B Hoffer, N Wainstein, CM Neumann, E Pop, E Yalon, S Kvatinsky IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022	6	2022
The Effect of Interfaces on Phase Change Memory Switching CM Neumann Stanford University, 2019	5	2019

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