| Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide TH Yang, BW Liang, HC Hu, FX Chen, SZ Ho, WH Chang, L Yang, HC Lo, ... Nature Electronics 7 (1), 29-38, 2024 | 45 | 2024 |
| Effect of focused ion beam deposition induced contamination on the transport properties of nano devices YW Lan, WH Chang, YC Chang, CS Chang, CD Chen Nanotechnology 26 (5), 055705, 2015 | 19 | 2015 |
| Polymer‐Free Patterning of Graphene at Sub‐10‐nm Scale by Low‐Energy Repetitive Electron Beam YW Lan, WH Chang, BT Xiao, BW Liang, JH Chen, P Jiang, LJ Li, YW Su, ... Small 10 (22), 4778-4784, 2014 | 18 | 2014 |
| High-frequency graphene base hot-electron transistor BW Liang, WH Chang, HY Lin, PC Chen, YT Zhang, KB Simbulan, KS Li, ... ACS nano 15 (4), 6756-6764, 2021 | 15 | 2021 |
| Twisted light-enhanced photovoltaic effect KB Simbulan, YJ Feng, WH Chang, CI Lu, TH Lu, YW Lan ACS nano 15 (9), 14822-14829, 2021 | 11 | 2021 |
| Superior phototransistors based on a single ZnO nanoparticle with high mobility and ultrafast response time LN Nguyen, WH Chang, CD Chen, YW Lan Nanoscale Horizons 5 (1), 82-88, 2020 | 11 | 2020 |
| Self-powered broadband photodetection enabled by facile CVD-grown MoS 2/GaN heterostructures BW Liang, WH Chang, CS Huang, YJ Huang, JH Chen, KS Li, ... Nanoscale 15 (45), 18233-18240, 2023 | 9 | 2023 |
| Defect-engineered room temperature negative differential resistance in monolayer MoS 2 transistors WH Chang, CI Lu, TH Yang, ST Yang, KB Simbulan, CP Lin, SH Hsieh, ... Nanoscale Horizons 7 (12), 1533-1539, 2022 | 7 | 2022 |
| Generation of concentric space-variant linear polarized light by dielectric metalens WH Chang, JH Lin, CH Kuan, SY Huang, YW Lan, TH Lu Nano Letters 21 (1), 562-568, 2020 | 7 | 2020 |
| Effects of oxygen bonding on defective semiconducting and metallic single-walled carbon nanotube bundles YW Lan, WH Chang, SJ Lai, YC Chang, CS Wu, CH Kuan, CS Chang, ... Carbon 50 (12), 4619-4627, 2012 | 7 | 2012 |
| Room temperature negative differential resistance in clay-graphite paper transistors ST Yang, TH Yang, CI Lu, WH Chang, KB Simbulan, YW Lan Carbon 176, 440-445, 2021 | 5 | 2021 |
| Stacking fault induced tunnel barrier in platelet graphite nanofiber YW Lan, WH Chang, YY Li, YC Chang, CS Chang, CD Chen Applied Physics Letters 105 (10), 2014 | 5 | 2014 |
| Memtransistor-like operation of devices made by graphene/h-BN/MoS2 van der Waals heterostructure SP Chien, BW Liang, WH Chang, BW Wang, YJ Feng, YC Chen, YW Lan Applied Physics Letters 123 (14), 2023 | 4 | 2023 |
| Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide ST Yang, TH Yang, BW Liang, HC Lo, WH Chang, PY Lin, CY Su, YW Lan ACS nano 18 (9), 6936-6945, 2024 | 3 | 2024 |
| Phonon polarization deformation in graphene induced by substrate coupling strengths YC Chang, B Das, YF Chiang, WH Chang, YC Chen, R Kesarwani, ... Applied Physics Letters 122 (3), 2023 | 1 | 2023 |
| Magnetic Field‐Induced Polar Order in Monolayer Molybdenum Disulfide Transistors (Adv. Mater. 52/2024) D Hao, WH Chang, YC Chang, WT Liu, SZ Ho, CH Lu, TH Yang, ... Advanced Materials 36 (52), 2470415, 2024 | | 2024 |
| Magnetic Field‐Induced Polar Order in Monolayer Molybdenum Disulfide Transistors D Hao, WH Chang, YC Chang, WT Liu, SZ Ho, CH Lu, TH Yang, ... Advanced Materials 36 (52), 2411393, 2024 | | 2024 |
| Negative differential resistance induced by sulfur vacancies in monolayer MoS2 transistors WH Chang, CI Lu, TH Yang, ST Yang, KB Simbulan, TH Lu, YW Lan Low-Dimensional Materials and Devices 2023 12651, 4-7, 2023 | | 2023 |
| 二維材料過渡金屬硫化物元件製程及其積層三維整合技術 YW Lan, WH Chang, TH Yang 科儀新知, 19-24, 2022 | | 2022 |
| Homoepitaxy of rhombohedral-stacked MoS2 with room temperature switchable ferroelectricity TH Yang, HC Hu, FXR Chen, PY Lin, YF Chiang, WH Chang, YH Kuo, ... arXiv preprint arXiv:2205.12118, 2022 | | 2022 |
YW LanProfessor of Physics, National Taiwan Normal UniversityEmail yang diverifikasi di ntnu.edu.tw