Atomic Layer Deposition of CJ Kirkpatrick, B Lee, R Suri, X Yang, V Misra
IEEE electron device letters 33 (9), 1240-1242, 2012
53 2012 3DNAND GIDL-assisted body biasing for erase enabling CMOS under array (CUA) architecture C Caillat, K Beaman, A Bicksler, E Camozzi, T Ghilardi, G Huang, H Liu, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
49 2017 Platinum nanoparticles grown by atomic layer deposition for charge storage memory applications S Novak, B Lee, X Yang, V Misra
Journal of The Electrochemical Society 157 (6), H589, 2010
45 2010 Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal X Yang, B Lee, V Misra
IEEE Transactions on Electron Devices 63 (7), 2826-2830, 2016
39 2016 Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics B Lee, C Kirkpatrick, X Yang, S Jayanti, R Suri, J Roberts, V Misra
2010 International Electron Devices Meeting, 20.6. 1-20.6. 4, 2010
37 2010 Low-frequency noise measurements of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with HfAlO gate dielectric C Kayis, JH Leach, CY Zhu, M Wu, X Li, Ü Ozgur, H Morkoç, X Yang, ...
IEEE electron device letters 31 (9), 1041-1043, 2010
33 2010 Ultimate scalability of TaN metal floating gate with incorporation of high-k blocking dielectrics for flash memory applications S Jayanti, X Yang, R Suri, V Misra
2010 International Electron Devices Meeting, 5.3. 1-5.3. 4, 2010
32 2010 High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2 X Yang, B Lee, V Misra
IEEE Electron Device Letters 36 (4), 312-314, 2015
30 2015 Investigation of the Origin of B Lee, SR Novak, DJ Lichtenwalner, X Yang, V Misra
IEEE transactions on electron devices 58 (9), 3106-3115, 2011
22 2011 Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures S Jayanti, X Yang, DJ Lichtenwalner, V Misra
Applied Physics Letters 96 (9), 2010
19 2010 Normally‐off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application B Lee, C Kirkpatrick, Y Choi, X Yang, AQ Huang, V Misra
physica status solidi c 9 (3‐4), 868-870, 2012
17 2012 Impact of ALD gate dielectrics (SiO2, HfO2, and SiO2/HAH) on device electrical characteristics and reliability of AlGaN/GaN MOSHFET devices B Lee, C Kirkpatrick, YH Choi, X Yang, Y Wang, X Yang, A Huang, ...
ECS Transactions 41 (3), 445, 2011
17 2011 Investigation of Lanthanum Silicate conditions on 4H-SiC MOSFET characteristics X Yang, B Lee, V Misra
IEEE Transactions on Electron Devices 62 (11), 3781-3785, 2015
15 2015 High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2 XY Yang, BM Lee, V Misra
Materials Science Forum 778, 557-561, 2014
14 2014 Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics C Kirkpatrick, B Lee, X Yang, V Misra
physica status solidi c 8 (7‐8), 2445-2447, 2011
11 2011 Improvement of threshold voltage reliability of 4H-SiC MOSFETs with lanthanum silicate by high temperature forming gas anneal X Yang, B Lee, V Misra
IEEE Electron Device Letters 39 (2), 244-247, 2017
10 2017 Measurements of generation‐recombination effect by low‐frequency phase‐noise technique in AlGaN/GaN MOSHFETs C Kayis, JH Leach, CY Zhu, M Wu, X Li, Ü Özgür, H Morkoç, X Yang, ...
physica status solidi c 8 (5), 1539-1543, 2011
8 2011 Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO B Lee, C Kirkpatrick, X Yang, S Jayanti, R Suri, J Roberts
IEDM Tech. Dig, 20.6, 0
8 Investigation of Thermal Stability of High-kappa Interpoly Dielectrics in TaN Metal Floating Gate Memory Structures S Jayanti, X Yang, V Misra
2011 3rd IEEE International Memory Workshop (IMW), 1-4, 2011
6 2011 Effect of post deposition annealing for high mobility 4H-SiC MOSFET utilizing lanthanum silicate and atomic layer deposited SiO2 X Yang, B Lee, V Misra
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 117-120, 2014
2 2014 