Gilles Patriarche

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OugazzadenGeorgia Institute of TechnologyEmail yang diverifikasi di georgiatech-metz.fr
Eric Le BourhisUniversity of PoitiersEmail yang diverifikasi di univ-poitiers.fr
Guillaume Saint-GironsDirecteur de recherches CNRSEmail yang diverifikasi di ec-lyon.fr
Konstantinos PantzasResearch Scientist, CNRS Center for Nanostructures and NanosciencesEmail yang diverifikasi di c2n.upsaclay.fr
Suresh SundaramAssociate Professor, Georgia Tech EuropeEmail yang diverifikasi di georgiatech-metz.fr
Jean Paul SalvestriniGeorgia Tech EuropeEmail yang diverifikasi di georgiatech-metz.fr
Michel MortierCNRS / Chimie ParisTech (France)Email yang diverifikasi di chimie-paristech.fr
Maria TchernychevaResearcher at Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Universite Paris-SudEmail yang diverifikasi di u-psud.fr
Nicolas ChauvinINLEmail yang diverifikasi di insa-lyon.fr
Emmanuel LhuillierINSP CNRS - Sorbonne universitéEmail yang diverifikasi di insp.upmc.fr
Tarik MoudakirIngénieur ChercheurEmail yang diverifikasi di georgiatech-metz.fr
lianhe liUniversity of LeedsEmail yang diverifikasi di leeds.ac.uk
Abdelkarim OuerghiC2N, Université Paris-SaclayEmail yang diverifikasi di c2n.upsaclay.fr
Sandrine IthurriaESPCI Paris, PSLEmail yang diverifikasi di espci.fr
Andrea FioreEindhoven University of TechnologyEmail yang diverifikasi di tue.nl
Pere Roca i CabarrocasLPICM, CNRS, Ecole Polytechnique, and IPVFEmail yang diverifikasi di polytechnique.edu
debora pierucciINSP CNRS - Sorbonne universitéEmail yang diverifikasi di insp.upmc.fr
Bruno GrandidierIEMN-CNRS, dept. ISEN PhysicsEmail yang diverifikasi di isen.fr
Laurent BacriUniversité d'Evry Val d'Essonne - LAMBE CNRS UMR 8587Email yang diverifikasi di univ-evry.fr
Adrien MichonResearcher at CRHEA - CNRSEmail yang diverifikasi di crhea.cnrs.fr

Ikuti

Gilles Patriarche

Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris Sud, Université Paris

Email yang diverifikasi di c2n.upsaclay.fr

physique des matériaux physique des semiconducteurs microscopie électronique en transmission


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Why does wurtzite form in nanowires of III-V zinc blende semiconductors? F Glas, JC Harmand, G Patriarche Physical review letters 99 (14), 146101, 2007	965	2007
Core/shell colloidal semiconductor nanoplatelets B Mahler, B Nadal, C Bouet, G Patriarche, B Dubertret Journal of the American Chemical Society 134 (45), 18591-18598, 2012	468	2012
Band Alignment and Minigaps in Monolayer MoS₂-Graphene van der Waals Heterostructures D Pierucci, H Henck, J Avila, A Balan, CH Naylor, G Patriarche, YJ Dappe, ... Nano letters 16 (7), 4054-4061, 2016	365	2016
Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth JC Harmand, G Patriarche, N Péré-Laperne, MN Merat-Combes, ... Applied Physics Letters 87 (20), 2005	364	2005
Efficient exciton concentrators built from colloidal core/crown CdSe/CdS semiconductor nanoplatelets MD Tessier, P Spinicelli, D Dupont, G Patriarche, S Ithurria, B Dubertret Nano letters 14 (1), 207-213, 2014	319	2014
Crystal phase quantum dots N Akopian, G Patriarche, L Liu, JC Harmand, V Zwiller Nano letters 10 (4), 1198-1201, 2010	313	2010
Predictive modeling of self-catalyzed III-V nanowire growth F Glas, MR Ramdani, G Patriarche, JC Harmand Physical Review B—Condensed Matter and Materials Physics 88 (19), 195304, 2013	234	2013
From excitonic to photonic polariton condensate in a ZnO-based microcavity F Li, L Orosz, O Kamoun, S Bouchoule, C Brimont, P Disseix, T Guillet, ... Physical review letters 110 (19), 196406, 2013	234	2013
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys A Elbaz, D Buca, N von den Driesch, K Pantzas, G Patriarche, ... Nature Photonics 14 (6), 375-382, 2020	227	2020
Type-II CdSe/CdTe core/crown semiconductor nanoplatelets S Pedetti, S Ithurria, H Heuclin, G Patriarche, B Dubertret Journal of the American Chemical Society 136 (46), 16430-16438, 2014	214	2014
Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm C Paranthoen, N Bertru, O Dehaese, A Le Corre, S Loualiche, B Lambert, ... Applied Physics Letters 78 (12), 1751-1753, 2001	214	2001
Infrared photodetection based on colloidal quantum-dot films with high mobility and optical absorption up to THz E Lhuillier, M Scarafagio, P Hease, B Nadal, H Aubin, XZ Xu, N Lequeux, ... Nano letters 16 (2), 1282-1286, 2016	205	2016
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ... Journal of Applied Physics 102 (9), 2007	192	2007
van der Waals epitaxy of GaSe/graphene heterostructure: electronic and interfacial properties Z Ben Aziza, H Henck, D Pierucci, MG Silly, E Lhuillier, G Patriarche, ... ACS nano 10 (10), 9679-9686, 2016	191	2016
Gradient CdSe/CdS quantum dots with room temperature biexciton unity quantum yield M Nasilowski, P Spinicelli, G Patriarche, B Dubertret Nano letters 15 (6), 3953-3958, 2015	185	2015
Arsenic pathways in self-catalyzed growth of GaAs nanowires MR Ramdani, JC Harmand, F Glas, G Patriarche, L Travers Crystal Growth & Design 13 (1), 91-96, 2013	181	2013
Atomic step flow on a nanofacet JC Harmand, G Patriarche, F Glas, F Panciera, I Florea, JL Maurice, ... Physical review letters 121 (16), 166101, 2018	180	2018
Growth and characterization of InP nanowires with InAsP insertions M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ... Nano letters 7 (6), 1500-1504, 2007	179	2007
Sub-5 nm FIB direct patterning of nanodevices J Gierak, A Madouri, AL Biance, E Bourhis, G Patriarche, C Ulysse, ... Microelectronic engineering 84 (5-8), 779-783, 2007	179	2007
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ... Nanotechnology 18 (38), 385306, 2007	167	2007

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