| The new nitrides: Layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system D Jena, R Page, J Casamento, P Dang, J Singhal, Z Zhang, J Wright, ... Japanese Journal of Applied Physics 58 (SC), SC0801, 2019 | 105 | 2019 |
| Structural and piezoelectric properties of ultra-thin ScxAl1− xN films grown on GaN by molecular beam epitaxy J Casamento, CS Chang, YT Shao, J Wright, DA Muller, HG Xing, D Jena Applied Physics Letters 117 (11), 2020 | 65 | 2020 |
| Oxygen Incorporation in the Molecular Beam Epitaxy Growth of ScxGa1−xN and ScxAl1−xN J Casamento, HG Xing, D Jena physica status solidi (b) 257 (4), 1900612, 2020 | 58 | 2020 |
| Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy R Page, J Casamento, Y Cho, S Rouvimov, HG Xing, D Jena Physical Review Materials 3 (6), 064001, 2019 | 55 | 2019 |
| Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ... Applied Physics Letters 119 (6), 2021 | 53 | 2021 |
| Epitaxial ScxAl1− xN on GaN exhibits attractive high-K dielectric properties J Casamento, H Lee, T Maeda, V Gund, K Nomoto, L van Deurzen, ... Applied Physics Letters 120 (15), 2022 | 48 | 2022 |
| Semiconducting high-entropy chalcogenide alloys with ambi-ionic entropy stabilization and ambipolar doping Z Deng, A Olvera, J Casamento, JS Lopez, L Williams, R Lu, G Shi, ... Chemistry of Materials 32 (14), 6070-6077, 2020 | 47 | 2020 |
| Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN J Casamento, J Wright, R Chaudhuri, HG Xing, D Jena Applied Physics Letters 115 (17), 2019 | 42 | 2019 |
| Insights on the Synthesis, Crystal and Electronic Structures, and Optical and Thermoelectric Properties of Sr1–xSbxHfSe3 Orthorhombic Perovskite NA Moroz, C Bauer, L Williams, A Olvera, J Casamento, AA Page, ... Inorganic Chemistry 57 (12), 7402-7411, 2018 | 35 | 2018 |
| Crystal Structure and Thermoelectric Properties of the 7,7L Lillianite Homologue Pb6Bi2Se9 J Casamento, JS Lopez, NA Moroz, A Olvera, H Djieutedjeu, A Page, ... Inorganic Chemistry 56 (1), 261-268, 2017 | 31 | 2017 |
| Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1− xN/GaN heterostructures J Casamento, H Lee, CS Chang, MF Besser, T Maeda, DA Muller, ... APL Materials 9 (9), 2021 | 29 | 2021 |
| Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions J Casamento, TS Nguyen, Y Cho, C Savant, T Vasen, S Afroz, D Hannan, ... Applied Physics Letters 121 (19), 2022 | 28 | 2022 |
| Temperature-dependent Lowering of Coercive Field in 300 nm Sputtered Ferroelectric Al0.70Sc0.30N V Gund, B Davaji, H Lee, MJ Asadi, J Casamento, HG Xing, D Jena, A Lal 2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF), 1-3, 2021 | 22 | 2021 |
| Towards realizing the low-coercive field operation of sputtered ferroelectric ScxAl1-xN V Gund, B Davaji, H Lee, J Casamento, HG Xing, D Jena, A Lal 2021 21st International Conference on Solid-State Sensors, Actuators and …, 2021 | 21 | 2021 |
| In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors R Chaudhuri, A Hickman, J Singhal, J Casamento, HG Xing, D Jena physica status solidi (a) 219 (4), 2100452, 2022 | 18 | 2022 |
| FerroHEMTs: High-current and high-speed all-epitaxial AlScN/GaN ferroelectric transistors J Casamento, K Nomoto, TS Nguyen, H Lee, C Savant, L Li, A Hickman, ... 2022 International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2022 | 17 | 2022 |
| 2021 21st International Conference on Solid‐State Sensors, Actuators and Microsystems (Transducers) V Gund, B Davaji, H Lee, J Casamento, HG Xing, D Jena, A Lal | 15 | 2021 |
| Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors L Van Deurzen, TS Nguyen, J Casamento, HG Xing, D Jena Applied Physics Letters 123 (24), 2023 | 14 | 2023 |
| Infrared signatures for phase identification in hafnium oxide thin films ST Jaszewski, S Calderon, B Shrestha, SS Fields, A Samanta, FJ Vega, ... ACS nano 17 (23), 23944-23954, 2023 | 14 | 2023 |
| Spin–orbit torque field-effect transistor (SOTFET): Proposal for a magnetoelectric memory X Li, J Casamento, P Dang, Z Zhang, O Afuye, AB Mei, AB Apsel, ... Applied Physics Letters 116 (24), 2020 | 14 | 2020 |
