| The role of Ru passivation and doping on the barrier and seed layer properties of Ru-modified TaN for copper interconnects S Kondati Natarajan, CL Nies, M Nolan The Journal of chemical physics 152 (14), 2020 | 16 | 2020 |
| Ru passivated and Ru doped ε-TaN surfaces as a combined barrier and liner material for copper interconnects: a first principles study SK Natarajan, CL Nies, M Nolan Journal of Materials Chemistry C 7 (26), 7959-7973, 2019 | 16 | 2019 |
| Control of the Cu morphology on Ru-passivated and Ru-doped TaN surfaces–promoting growth of 2D conducting copper for CMOS interconnects CL Nies, SK Natarajan, M Nolan Chemical Science 13 (3), 713-725, 2022 | 12 | 2022 |
| DFT calculations of the structure and stability of copper clusters on MoS2 CL Nies, M Nolan Beilstein Journal of Nanotechnology 11 (1), 391-406, 2020 | 11 | 2020 |
| Electronic and optical properties of boron-containing GaN alloys: The role of boron atom clustering CL Nies, TP Sheerin, S Schulz APL Materials 11 (9), 2023 | 3 | 2023 |
| Incorporation of tungsten or cobalt into TaN barrier layers controls morphology of deposited copper CL Nies, M Nolan Journal of Physics: Materials 6 (3), 035008, 2023 | 3 | 2023 |
| Control of Cu morphology on TaN barrier and combined Ru-TaN barrier/liner substrates for nanoscale interconnects from atomistic kinetic Monte Carlo simulations S Aldana, CL Nies, M Nolan arXiv preprint arXiv:2410.06133, 2024 | 1 | 2024 |
| Prediction of Co and Ru nanocluster morphology on 2D MoS2 from interaction energies CL Nies, M Nolan Beilstein Journal of Nanotechnology 12 (1), 704-724, 2021 | 1 | 2021 |
| Structure and stability of copper nanoclusters on monolayer tungsten dichalcogenides M Sweetman, CL Nies, M Nolan Dalton Transactions, 2025 | | 2025 |
| Impact of boron atom clustering on the electronic structure of (B, In) N alloys CL Nies, S Schulz physica status solidi (b) 261 (11), 2400016, 2024 | | 2024 |
| Study of Cu, Co and Ru Nanoclusters on MoS2 to Predict Thin Film Morphology CL Nies, M Nolan Electrochemical Society Meeting Abstracts 241, 848-848, 2022 | | 2022 |
| Nitride materials for use in downscaled interconnect technology CL Nies University College Cork, 2022 | | 2022 |
| TaN-Based Combined Barrier+ Liner Materials to Beat the Interconnect Bottleneck CL Nies, S Kondati Natarajan, M Nolan Electrochemical Society Meeting Abstracts 239, 1006-1006, 2021 | | 2021 |
| Structure and Stability of Small Metal Clusters on Stoichiometric and Defective 2D MoS2 CL Nies, M Nolan Electrochemical Society Meeting Abstracts 239, 1985-1985, 2021 | | 2021 |
| New Materials to Battle the Transistor Interconnect Bottleneck CL Nies, SK Natarajan, M Nolan Electrochemical Society Meeting Abstracts 237, 1294-1294, 2020 | | 2020 |
| DFT calculations of the structure and stability of copper clusters CL Nies, M Nolan | | 2020 |
| The Role of Ru Passivation CL Nies, M Nolan | | 2020 |
| Structure and Stability of Cun Clusters (N= 1-4) Adsorbed on Stoichiometric and Defective 2D MoS2 CL Nies, M Nolan | | 2019 |
| Ru passivated and Ru doped e-TaN surfaces as combined barrier and liner material for copper interconnects: a first principles study S Kondati Natarajan, CL Nies, M Nolan Royal Society of Chemistry, 2019 | | 2019 |
| Ru Passivated and Ru Doped e-TaN surfaces as Combined Barrier and Liner Material for Copper Interconnects: A First Principles Study S Natarajan, CL Nies, M Nolan | | 2018 |
