Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ...
IEEE Transactions on Electron Devices 63 (2), 614-619, 2016
100 2016 High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure S Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ...
IEEE Electron Device Letters 37 (12), 1617-1620, 2016
90 2016 Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing J Zhang, S Huang, Q Bao, X Wang, K Wei, Y Zheng, Y Li, C Zhao, X Liu, ...
Applied Physics Letters 107 (26), 2015
68 2015 Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs Z Liu, S Huang, Q Bao, X Wang, K Wei, H Jiang, H Cui, J Li, C Zhao, X Liu, ...
Journal of Vacuum Science & Technology B 34 (4), 2016
50 2016 Dependence of M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ Chen
IEEE Electron Device Letters 39 (3), 413-416, 2018
47 2018 Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue® MOCVD platform Q Bao, T Zhu, N Zhou, S Guo, J Luo, C Zhao
Journal of Crystal Growth 419, 52-56, 2015
33 2015 Mechanism of TMAl pre-seeding in AlN epitaxy on Si (111) substrate Q Bao, J Luo, C Zhao
Vacuum 101, 184-188, 2014
31 2014 Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx /GaN MIS-FETs M Hua, J Wei, Q Bao, J He, Z Zhang, Z Zheng, J Lei, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2017
30 2017 Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure Q Bao, S Huang, X Wang, K Wei, Y Zheng, Y Li, C Yang, H Jiang, J Li, ...
Semiconductor Science and Technology 31 (6), 065014, 2016
29 2016 Hole-induced threshold voltage shift under reverse-bias stress in E-mode GaN MIS-FET M Hua, J Wei, Q Bao, Z Zheng, Z Zhang, J He, KJ Chen
IEEE Transactions on Electron Devices 65 (9), 3831-3838, 2018
25 2018 High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer M Hua, Z Zhang, Q Qian, J Wei, Q Bao, G Tang, KJ Chen
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
10 2017 Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiNx X Ma, Y Liu, X Wang, S Huang, Z Gao, Q Bao, X Liu
physica status solidi (a) 212 (12), 2928-2935, 2015
9 2015 GaN-based power electronic device and method for manufacturing the same S Huang, X Liu, XH Wang, K Wei, BAO Qilong, W Wang, C Zhao
US Patent 10,062,775, 2018
4 2018 Evolution of traps in TiN/O3-sourced Al2O3/GaN gate structures with thermal annealing temperature X Liu, S Huang, Q Bao, X Wang, K Wei, Y Li, J Xiang, C Zhao, X Yang, ...
Journal of Vacuum Science & Technology B 36 (2), 2018
4 2018 Device physics towards high performance GaN-based power electronics K Wei, S Yang, J Chen, Z Tang, X Liu, S Huang, X Wang, Q Bao, M Hua
Scientia Sinica Physica, Mechanica & Astronomica 46 (10), 107307, 2016
3 2016 Gallium nitride component, method for manufacturing gallium nitride component, and electronic device T Gaofei, D Ueda, H Sun, BAO Qilong, W Hanxing
US Patent App. 18/592,325, 2024
2024 Integrated device, semiconductor device, and integrated device manufacturing method T Gaofei, BAO Qilong, W Hanxing, Q Jiang, D Ouyang
US Patent App. 18/533,315, 2024
2024 Field effect transistor, preparation method thereof, and switch circuit BAO Qilong, Q Jiang, T Gaofei, W Hanxing, G Curatola
US Patent App. 18/463,417, 2023
2023 Gallium Nitride Power Transistor G Curatola, BAO Qilong, Q Jiang, T Gaofei, W Hanxing
US Patent App. 18/460,216, 2023
2023 Gallium Nitride Device, Switching Power Transistor, Drive Circuit, and Gallium Nitride Device Production Method BAO Qilong, Q Jiang, T Gaofei, W Hanxing, B Huang, Z Hou
US Patent App. 17/727,221, 2022
2022 
Sen HuangInstitute of Microelectronics, Chinese Academy of SciencesEmail yang diverifikasi di ime.ac.cn