Ikuti
Andreas Schramm
Andreas Schramm
R&D Manager Epitaxy, Modulight Corp.
Email yang diverifikasi di modulight.com
Judul
Dikutip oleh
Dikutip oleh
Tahun
Regimes of GaAs quantum dot self-assembly by droplet epitaxy
C Heyn, A Stemmann, A Schramm, H Welsch, W Hansen, Á Nemcsics
Physical Review B—Condensed Matter and Materials Physics 76 (7), 075317, 2007
1682007
Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography
J Tommila, V Polojärvi, A Aho, A Tukiainen, J Viheriälä, J Salmi, ...
Solar Energy Materials and Solar Cells 94 (10), 1845-1848, 2010
1032010
Variation of lattice constant and cluster formation in GaAsBi
J Puustinen, M Wu, E Luna, A Schramm, P Laukkanen, M Laitinen, ...
Journal of Applied Physics 114 (24), 2013
732013
Lithographically defined metal-semiconductor-hybrid nanoscrolls
O Schumacher, S Mendach, H Welsch, A Schramm, C Heyn, W Hansen
Applied Physics Letters 86 (14), 2005
722005
Superior radiation tolerance of thin epitaxial silicon detectors
G Kramberger, D Contarato, E Fretwurst, F Hönniger, G Lindström, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2003
702003
Faceting during GaAs quantum dot self-assembly by droplet epitaxy
C Heyn, A Stemmann, A Schramm, H Welsch, W Hansen, Á Nemcsics
Applied Physics Letters 90 (20), 2007
652007
Tunneling emission from self-assembled InAs quantum dots probed with capacitance transients
S Schulz, A Schramm, C Heyn, W Hansen
Physical Review B—Condensed Matter and Materials Physics 74 (3), 033311, 2006
502006
Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dots
J Tommila, A Tukiainen, J Viheriälä, A Schramm, T Hakkarainen, A Aho, ...
Journal of Crystal Growth 323 (1), 183-186, 2011
472011
Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells
V Polojärvi, A Aho, A Tukiainen, M Raappana, T Aho, A Schramm, ...
Solar Energy Materials and Solar Cells 149, 213-220, 2016
462016
Lithography-free oxide patterns as templates for self-catalyzed growth of highly uniform GaAs nanowires on Si (111)
TV Hakkarainen, A Schramm, J Mäkelä, P Laukkanen, M Guina
Nanotechnology 26 (27), 275301, 2015
462015
The RHEED tracking of the droplet epitaxial grown quantum dot and ring structures
Á Nemcsics, C Heyn, A Stemmann, A Schramm, H Welsch, W Hansen
Materials Science and Engineering: B 165 (1-2), 118-121, 2009
462009
Correlation effects in wave function mapping of molecular beam epitaxy grown quantum dots
G Maruccio, M Janson, A Schramm, C Meyer, T Matsui, C Heyn, ...
Nano letters 7 (9), 2701-2706, 2007
352007
Radiation tolerance of epitaxial silicon detectors at very large proton fluences
G Lindström, E Fretwurst, F Hönniger, G Kramberger, M Möller-Ivens, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006
352006
Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy
A Schramm, J Tommila, C Strelow, TV Hakkarainen, A Tukiainen, ...
Nanotechnology 23 (17), 175701, 2012
332012
Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations
TV Hakkarainen, J Tommila, A Schramm, A Tukiainen, R Ahorinta, ...
Applied Physics Letters 97 (17), 2010
272010
Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits
J Tommila, A Schramm, TV Hakkarainen, M Dumitrescu, M Guina
Nanotechnology 24 (23), 235204, 2013
262013
Composition of the “GaAs” quantum dot, grown by droplet epitaxy
Á Nemcsics, L Tóth, L Dobos, C Heyn, A Stemmann, A Schramm, ...
Superlattices and Microstructures 48 (4), 351-357, 2010
252010
Droplet epitaxy of GaAs quantum dots on (0 0 1), vicinal (0 0 1),(1 1 0), and (3 1 1) A GaAs
C Heyn, A Stemmann, A Schramm, W Hansen
Journal of crystal growth 311 (7), 1825-1827, 2009
242009
Photoinduced hole transfer in QD–phthalocyanine hybrids
LD Arvani M, Virkki K, Abou-Chahine F, Efimov A, Schramm A, Tkachenko NV
Physical Chemistry Chemical Physics 18 (39), 27414-27421, 2016
232016
Suppression of competing tunneling processes in thermally-activated carrier emission on self-assembled InAs quantum dots
A Schramm, S Schulz, C Heyn, W Hansen
Physical Review B—Condensed Matter and Materials Physics 77 (15), 153308, 2008
222008
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