Martin Eickhoff

Dikutip oleh

	Semua	Sejak 2020
Kutipan	11487	2942
indeks-h	53	24
indeks-i10	165	71

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53 artikel

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Jordi ArbiolICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BISTEmail yang diverifikasi di icrea.cat
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceEmail yang diverifikasi di cea.fr
Sangam ChatterjeeInstitute for Experimental Physics I, Justus-Liebig-University GiessenEmail yang diverifikasi di physik.uni-giessen.de
Alexey ChernikovDresden University of Technology (TU Dresden), University of RegensburgEmail yang diverifikasi di tu-dresden.de
Anna Fontcuberta i MorralEcole Polytechnique Fédérale de LausanneEmail yang diverifikasi di epfl.ch
Maria TchernychevaResearcher at Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Universite Paris-SudEmail yang diverifikasi di u-psud.fr
Gwénolé JacopinInstitut Néel - CNRS, Univ. Grenoble Alpes, FranceEmail yang diverifikasi di epfl.ch
Tomás PalaciosMITEmail yang diverifikasi di mit.edu
Andreas OffenhäusserForschungszentrum JülichEmail yang diverifikasi di fz-juelich.de
Jaume GazquezICMAB-CSICEmail yang diverifikasi di icmab.es
Ulrich SchwarzProfessor, TU ChemnitzEmail yang diverifikasi di physik.tu-chemnitz.de
j. grajal de la fuenteUniversidad Politécnica de MadridEmail yang diverifikasi di upm.es
Guido FagliaUniversity of Brescia & CNR BresciaEmail yang diverifikasi di ing.unibs.it
Silvia RamosUniversity of KentEmail yang diverifikasi di cond-mat.org
Lise LahourcadeLASPE @ EPFL - SwitzerlandEmail yang diverifikasi di epfl.ch
PezoldtTU IlmenauEmail yang diverifikasi di tu-ilmenau.de
Richard S. Mullerprofessor of eecs university of california berkeleyEmail yang diverifikasi di eecs.berkeley.edu

Ikuti

Martin Eickhoff

Institut für Festkörperphysik, Universität Bremen

Email yang diverifikasi di ifp.uni-bremen.de

Solid state physics semiconductor physics physics of nanostructures biochemical sensors nanosensors


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Pyroelectric properties ofAl (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1435	2002
Binary copper oxide semiconductors: From materials towards devices BK Meyer, A Polity, D Reppin, M Becker, P Hering, PJ Klar, T Sander, ... physica status solidi (b) 249 (8), 1487-1509, 2012	817	2012
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff Applied Physics Letters 83 (1), 177-179, 2003	362	2003
Playing with polarity M Stutzmann, O Ambacher, M Eickhoff, U Karrer, A Lima Pimenta, ... physica status solidi (b) 228 (2), 505-512, 2001	292	2001
Gas sensitive GaN/AlGaN-heterostructures J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann Sensors and Actuators B: Chemical 87 (3), 425-430, 2002	277	2002
Hydrogen response mechanism of Pt–GaN Schottky diodes J Schalwig, G Müller, U Karrer, M Eickhoff, O Ambacher, M Stutzmann, ... Applied Physics Letters 80 (7), 1222-1224, 2002	264	2002
GaN-based heterostructures for sensor applications M Stutzmann, G Steinhoff, M Eickhoff, O Ambacher, CE Nebel, J Schalwig, ... Diamond and related materials 11 (3-6), 886-891, 2002	243	2002
Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis M De La Mata, C Magen, J Gazquez, MIB Utama, M Heiss, S Lopatin, ... Nano letters 12 (5), 2579-2586, 2012	204	2012
Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy-The influence of Si-and Mg-doping F Furtmayr, M Vielemeyer, M Stutzmann, J Arbiol, S Estradé, F Peirò, ... Journal of Applied Physics 104 (3), 2008	200	2008
AlxGa1–xN—A new material system for biosensors G Steinhoff, O Purrucker, M Tanaka, M Stutzmann, M Eickhoff Advanced Functional Materials 13 (11), 841-846, 2003	196	2003
Direct biofunctionalization of semiconductors: A survey M Stutzmann, JA Garrido, M Eickhoff, MS Brandt physica status solidi (a) 203 (14), 3424-3437, 2006	189	2006
Recording of cell action potentials with AlGaN∕ GaN field-effect transistors G Steinhoff, B Baur, G Wrobel, S Ingebrandt, A Offenhäusser, A Dadgar, ... Applied Physics Letters 86 (3), 2005	182	2005
Tin-Assisted Synthesis of by Molecular Beam Epitaxy M Kracht, A Karg, J Schörmann, M Weinhold, D Zink, F Michel, M Rohnke, ... Physical Review Applied 8 (5), 054002, 2017	173	2017
Chemical functionalization of GaN and AlN surfaces B Baur, G Steinhoff, J Hernando, O Purrucker, M Tanaka, B Nickel, ... Applied Physics Letters 87 (26), 2005	168	2005
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures–Part B: Sensor applications M Eickhoff, J Schalwig, G Steinhoff, O Weidemann, L Görgens, ... physica status solidi (c), 1908-1918, 2003	161	2003
Influence of surface oxides on hydrogen-sensitive Pd: GaN Schottky diodes O Weidemann, M Hermann, G Steinhoff, H Wingbrant, A Lloyd Spetz, ... Applied Physics Letters 83 (4), 773-775, 2003	136	2003
Group III-nitride-based gas sensors for combustion monitoring J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann Materials Science and Engineering: B 93 (1-3), 207-214, 2002	133	2002
Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy TA Wassner, B Laumer, S Maier, A Laufer, BK Meyer, M Stutzmann, ... Journal of Applied Physics 105 (2), 2009	131	2009
Optical properties of Si-and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy F Furtmayr, M Vielemeyer, M Stutzmann, A Laufer, BK Meyer, M Eickhoff Journal of Applied Physics 104 (7), 2008	131	2008
AlN/diamond heterojunction diodes CR Miskys, JA Garrido, CE Nebel, M Hermann, O Ambacher, M Eickhoff, ... Applied physics letters 82 (2), 290-292, 2003	130	2003

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