Dietz Nikolaus

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Ian T. FergusonSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State UniversityEmail yang diverifikasi di kennesaw.edu
Mustafa AlevliMarmara UniversityEmail yang diverifikasi di marmara.edu.tr
A. G. Unil PereraRegent's Professor of Physics, Georgia State UniversityEmail yang diverifikasi di gsu.edu
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinEmail yang diverifikasi di tu-berlin.de
Matthew KaneAssociate Professor of Marine Engineering and Technology, Texas A&M University (Galveston Campus)Email yang diverifikasi di tamug.edu
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateEmail yang diverifikasi di ncsu.edu
Ramon CollazoProfessor of Materials Science and Engineering, NCSUEmail yang diverifikasi di ncsu.edu
Ramazan AtalayEmail yang diverifikasi di my.centennialcollege.ca
Max BüglerTechnische Universität BerlinEmail yang diverifikasi di physik.tu-berlin.de
Ali Kemal OkyayStanford UniversityEmail yang diverifikasi di stanford.edu
Sampath GamageUniversity of GeorgiaEmail yang diverifikasi di uga.edu
Kazufumi ItoNorth Carolina State UniversityEmail yang diverifikasi di math.ncsu.edu
Ronny KirsteResearch associate, NCSUEmail yang diverifikasi di ncsu.edu
M. K. I. SenevirathnaAssistant Professor, Center of Excellence for Materials Physics, Department of Physics, CAU, GeorgiaEmail yang diverifikasi di cau.edu
V. NarayananIBM T. J. Watson Research CenterEmail yang diverifikasi di us.ibm.com
Rudra P BhattaLoudoun County Public School SystemEmail yang diverifikasi di lcps.org
Ammar NayfehProfessor in Electrical Engineering Khalifa UniversityEmail yang diverifikasi di ku.ac.ae
Raoul SchlesserHexaTech, Inc.Email yang diverifikasi di hexatechinc.com
Farsad Imtiaz ChowdhuryResearch Assistant at University of AlbertaEmail yang diverifikasi di ualberta.ca
Sandro CattarinSenior Research Scientist CNR-ICMATE, PadovaEmail yang diverifikasi di cnr.it

Ikuti

Dietz Nikolaus

Georgia State University

Email yang diverifikasi di gsu.edu - Beranda

Condensed Matter Physics Group III-V thin film growth Materials diagnostics Optical material characterization


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Seeded growth of AlN bulk crystals in m-and c-orientation P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ... Journal of Crystal Growth 312 (1), 58-63, 2009	166	2009
The growth and optical properties of large, high-quality AlN single crystals M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ... Journal of applied physics 96 (10), 5870-5876, 2004	135	2004
GaN∕ AlGaN ultraviolet/infrared dual-band detector G Ariyawansa, MBM Rinzan, M Alevli, M Strassburg, N Dietz, AGU Perera, ... Applied physics letters 89 (9), 2006	96	2006
Different optical absorption edges in AlN bulk crystals grown in m-and c-orientations P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, Z Sitar Applied Physics Letters 93 (13), 2008	71	2008
Native defect related optical properties of ZnGeP₂ N Dietz, I Tsveybak, W Ruderman, G Wood, KJ Bachmann Applied physics letters 65 (22), 2759-2761, 1994	71	1994
Sellmeier parameters for and GaP FL Madarasz, JO Dimmock, N Dietz, KJ Bachmann Journal of Applied Physics 87 (3), 1564-1565, 2000	67	2000
Magnetic and optical properties of Ga1− xMnxN grown by metalorganic chemical vapour deposition MH Kane, A Asghar, CR Vestal, M Strassburg, J Senawiratne, ZJ Zhang, ... Semiconductor science and technology 20 (3), L5, 2005	65	2005
Characterization of InN layers grown by high-pressure chemical vapor deposition M Alevli, G Durkaya, A Weerasekara, AGU Perera, N Dietz, W Fenwick, ... Applied physics letters 89 (11), 2006	57	2006
Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy V Narayanan, S Mahajan, KJ Bachmann, V Woods, N Dietz Acta Materialia 50 (6), 1275-1287, 2002	57	2002
InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization V Woods, N Dietz Materials Science and Engineering: B 127 (2-3), 239-250, 2006	52	2006
Stacking faults and twins in gallium phosphide layers grown on silicon V Narayanan, S Mahajan, KJ Bachmann, V Woods, N Dietz Philosophical Magazine A 82 (4), 685-698, 2002	46	2002
Heteroepitaxy of GaP on Si (100) KJ Bachmann, U Rossow, N Sukidi, H Castleberry, N Dietz Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	44	1996
Orientation mediated self-assembled gallium phosphide islands grown on silicon V Narayanan, S Mahajan, N Sukidi, KJ Bachmann, V Woods, N Dietz Philosophical Magazine A 80 (3), 555-572, 2000	43	2000
p-Polarized reflectance spectroscopy: a highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions N Dietz, KJ Bachmann Vacuum 47 (2), 133-140, 1996	43	1996
Defect identification in semiconductors by Brewster angle spectroscopy HJ Lewerenz, N Dietz Journal of applied physics 73 (10), 4975-4987, 1993	42	1993
A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation B Tekcan, S Alkis, M Alevli, N Dietz, B Ortaç, N Biyikli, AK Okyay IEEE Electron Device Letters 35 (9), 936-938, 2014	41	2014
The characterization of InN growth under high‐pressure CVD conditions N Dietz, M Alevli, V Woods, M Strassburg, H Kang, IT Ferguson physica status solidi (b) 242 (15), 2985-2994, 2005	38	2005
Real-time optical characterization of thin film growth N Dietz Materials Science and Engineering: B 87 (1), 1-22, 2001	37	2001
Correlation of the structural and ferromagnetic properties of Ga1− xMnxN grown by metalorganic chemical vapor deposition MH Kane, M Strassburg, WE Fenwick, A Asghar, AM Payne, S Gupta, ... Journal of crystal growth 287 (2), 591-595, 2006	33	2006
Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy KJ Bachmann, N Dietz, AE Miller US Patent 5,552,327, 1996	33	1996

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