Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys MV Fischetti, SE Laux
Journal of Applied Physics 80 (4), 2234-2252, 1996
1932 1996 Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects MV Fischetti, SE Laux
Physical Review B 38 (14), 9721, 1988
1299 1988 Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering MV Fischetti, DA Neumayer, EA Cartier
Journal of Applied Physics 90 (9), 4587-4608, 2001
1033 2001 Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport MV Fischetti
IEEE transactions on electron devices 38 (3), 634-649, 1991
830 1991 Silicon CMOS devices beyond scaling W Haensch, EJ Nowak, RH Dennard, PM Solomon, A Bryant, ...
IBM Journal of Research and Development 50 (4.5), 339-361, 2006
632 2006 Monte Carlo study of electron transport in silicon inversion layers MV Fischetti, SE Laux
Physical Review B 48 (4), 2244, 1993
630 1993 Six-band MV Fischetti, Z Ren, PM Solomon, M Yang, K Rim
Journal of Applied Physics 94 (2), 1079-1095, 2003
622 2003 Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go? Laux, Fischetti
1992 International Technical Digest on Electron Devices Meeting, 553-556, 1992
432 1992 Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks S Zafar, A Callegari, E Gusev, MV Fischetti
Journal of Applied physics 93 (11), 9298-9303, 2003
389 2003 Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity S Jin, MV Fischetti, T Tang
Journal of Applied Physics 102 (8), 2007
373 2007 Quantum effects in the early universe. I. Influence of trace anomalies on homogeneous, isotropic, classical geometries MV Fischetti, JB Hartle, BL Hu
Physical Review D 20 (8), 1757, 1979
365 1979 Theory of high-field electron transport in silicon dioxide MV Fischetti, DJ DiMaria, SD Brorson, TN Theis, JR Kirtley
Physical Review B 31 (12), 8124, 1985
363 1985 Monte Carlo device simulation: full band and beyond K Hess
Springer Science & Business Media, 2012
345 2012 Understanding hot‐electron transport in silicon devices: Is there a shortcut? MV Fischetti, SE Laux, E Crabbe
Journal of Applied Physics 78 (2), 1058-1087, 1995
295 1995 On the enhanced electron mobility in strained-silicon inversion layers MV Fischetti, F Gamiz, W Hänsch
Journal of applied physics 92 (12), 7320-7324, 2002
284 2002 Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection MV Fischetti
Journal of applied physics 57 (8), 2860-2879, 1985
232 1985 Hybrid-orientation technology (HOT): Opportunities and challenges M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ...
IEEE Transactions on Electron Devices 53 (5), 965-978, 2006
229 2006 Impact ionization in silicon E Cartier, MV Fischetti, EA Eklund, FR McFeely
Applied Physics Letters 62 (25), 3339-3341, 1993
204 1993 Monte Carlo analysis of semiconductor devices: The DAMOCLES program SE Laux, MV Fischetti, DJ Frank
IBM Journal of Research and Development 34 (4), 466-494, 1990
203 1990 Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs S Jin, MV Fischetti, TW Tang
IEEE Transactions on Electron Devices 54 (9), 2191-2203, 2007
202 2007 