Ikuti
Richard Van de Sanden
Richard Van de Sanden
scientific director Eindhoven Institute of Renewable Energy Systems (EIRES), group leader Dutch
Email yang diverifikasi di differ.nl - Beranda
Judul
Dikutip oleh
Dikutip oleh
Tahun
Plasma-assisted atomic layer deposition: basics, opportunities, and challenges
HB Profijt, SE Potts, MCM Van de Sanden, WMM Kessels
Journal of Vacuum Science & Technology A 29 (5), 2011
11132011
The 2017 Plasma Roadmap: Low temperature plasma science and technology
I Adamovich, SD Baalrud, A Bogaerts, PJ Bruggeman, M Cappelli, ...
Journal of Physics D: Applied Physics 50 (32), 323001, 2017
10822017
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
B Hoex, SBS Heil, E Langereis, MCM Van de Sanden, WMM Kessels
Applied physics letters 89 (4), 2006
9602006
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
B Hoex, JJH Gielis, MCM Van de Sanden, WMM Kessels
Journal of Applied physics 104 (11), 2008
7402008
Silicon surface passivation by atomic layer deposited Al2O3
B Hoex, J Schmidt, P Pohl, MCM Van de Sanden, WMM Kessels
Journal of Applied Physics 104 (4), 2008
6472008
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels
Progress in photovoltaics: research and applications 16 (6), 461-466, 2008
6222008
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ...
Applied Physics Letters 91 (11), 2007
5242007
Optical constants of graphene measured by spectroscopic ellipsometry
JW Weber, VE Calado, MCM Van De Sanden
Applied physics letters 97 (9), 2010
5082010
High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
J Benick, B Hoex, MCM Van De Sanden, WMM Kessels, O Schultz, ...
Applied Physics Letters 92 (25), 2008
5042008
In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
E Langereis, SBS Heil, HCM Knoops, W Keuning, MCM Van De Sanden, ...
Journal of Physics D: Applied Physics 42 (7), 073001, 2009
4062009
Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
HW De Vries, MCM van de Sanden, M Creatore, WMM Kessels
US Patent App. 12/304,614, 2009
4032009
Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor
JL Van Hemmen, SBS Heil, JH Klootwijk, F Roozeboom, CJ Hodson, ...
Journal of The Electrochemical Society 154 (7), G165, 2007
3702007
Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
E Langereis, M Creatore, SBS Heil, MCM Van de Sanden, WMM Kessels
Applied physics letters 89 (8), 2006
3492006
Vacancies and voids in hydrogenated amorphous silicon
AHM Smets, WMM Kessels, MCM Van de Sanden
Applied physics letters 82 (10), 1547-1549, 2003
3432003
Influence of the deposition temperature on the c-Si surface passivation by Al2O3 films synthesized by ALD and PECVD
G Dingemans, MCM Van de Sanden, WMM Kessels
Electrochemical and Solid-state letters 13 (3), H76, 2009
2782009
Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
G Dingemans, W Beyer, MCM Van de Sanden, WMM Kessels
Applied Physics Letters 97 (15), 2010
2442010
Plasma‐driven dissociation of CO2 for fuel synthesis
W Bongers, H Bouwmeester, B Wolf, F Peeters, S Welzel, ...
Plasma processes and polymers 14 (6), 1600126, 2017
2382017
In Situ Observation of Nanoparticle Exsolution from Perovskite Oxides: From Atomic Scale Mechanistic Insight to Nanostructure Tailoring
D Neagu, V Kyriakou, IL Roiban, M Aouine, C Tang, A Caravaca, K Kousi, ...
ACS nano 13 (11), 12996-13005, 2019
2222019
Conformality of plasma-assisted ALD: physical processes and modeling
HCM Knoops, E Langereis, MCM Van De Sanden, WMM Kessels
Journal of The Electrochemical Society 157 (12), G241, 2010
2202010
Stability of Al2O3 and Al2O3/a-SiNx: H stacks for surface passivation of crystalline silicon
G Dingemans, P Engelhart, R Seguin, F Einsele, B Hoex, ...
Journal of Applied Physics 106 (11), 2009
2192009
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