Christian Lavoie

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22 artikel

14 artikel

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Jean Jordan-SweetIBM T.J. Watson Research CenterEmail yang diverifikasi di us.ibm.com
Ahmet S. OzcanSemiotic AIEmail yang diverifikasi di semiotic.ai
Guy CohenResearcher, IBM T.J. Watson Research Center, Yorktown Height, New YorkEmail yang diverifikasi di us.ibm.com
Zhen ZhangProfessor of Solid-State Electronics, Uppsala UniversityEmail yang diverifikasi di angstrom.uu.se
Roland Van Meirhaegheprofessor University of GentEmail yang diverifikasi di ugent.be
Paul SolomonIBMEmail yang diverifikasi di us.ibm.com
Thomas TiedjeElectrical and Computer Engineering, University of Victoria, Victoria, BCEmail yang diverifikasi di uvic.ca
Stephen RossnagelUVA Dept Mat. Sci.Email yang diverifikasi di virginia.edu
Conal MurrayResearch Staff Member, IBM T.J. Watson Research CenterEmail yang diverifikasi di us.ibm.com
Nicolas BREILApplied MaterialsEmail yang diverifikasi di amat.com
Kenneth P RodbellIBM TJ Watson Research CenterEmail yang diverifikasi di us.ibm.com
Phaedon AvourisIBM Fellow, Emeritus and University of Minnesota, MinneapolisEmail yang diverifikasi di umn.edu
Richard MartelProfessor of Chemistry, Universite de MontrealEmail yang diverifikasi di umontreal.ca
H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityEmail yang diverifikasi di stanford.edu
Jerry TersoffIBMEmail yang diverifikasi di us.ibm.com
L.A. ClevengerIBM ResearchEmail yang diverifikasi di us.ibm.com
Kathryn GuariniIBMEmail yang diverifikasi di us.ibm.com
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityEmail yang diverifikasi di purdue.edu
Shane R JohnsonArizona State UniversityEmail yang diverifikasi di asu.edu
Dae-gyu ParkSenior Manager, IBM T.J.Watson Research CenterEmail yang diverifikasi di us.ibm.com

Ikuti

Christian Lavoie

Manager Advanced Characterization, IBM T.J. Watson Research Center, Yorktown Heights, NY

Email yang diverifikasi di us.ibm.com

Contacts to CMOS devices Diffusion and Intermetallics X-ray Characterization Quantum Materials


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Ambipolar electrical transport in semiconducting single-wall carbon nanotubes R Martel, V Derycke, C Lavoie, I Appenzeller, KK Chan, J Tersoff, ... Phys. Rev. Lett. 87, 256805, 2001	1079	2001
Self-aligned process for nanotube/nanowire FETs P Avouris, RA Carruthers, J Chen, CGMM Detavernier, C Lavoie, ... US Patent 8,119,466, 2012	560	2012
Towards implementation of a nickel silicide process for CMOS technologies C Lavoie, FM d’Heurle, C Detavernier, C Cabral Jr Microelectronic Engineering 70 (2-4), 144-157, 2003	508	2003
Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ... IEEE Electron Device Letters 31 (7), 731-733, 2010	313	2010
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation J Kedzierski, E Nowak, T Kanarsky, Y Zhang, D Boyd, R Carruthers, ... Digest. International Electron Devices Meeting,, 247-250, 2002	283	2002
Thin film reaction of transition metals with germanium S Gaudet, C Detavernier, AJ Kellock, P Desjardins, C Lavoie Journal of Vacuum Science & Technology A 24 (3), 474-485, 2006	278	2006
High-/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ... IEEE Electron Device Letters 31 (4), 275-277, 2010	265	2010
Field-emission SEM imaging of compositional and doping layer semiconductor superlattices DD Perovic, MR Castell, A Howie, C Lavoie, T Tiedje, JSW Cole Ultramicroscopy 58 (1), 104-113, 1995	238	1995
An off-normal fibre-like texture in thin films on single-crystal substrates C Detavernier, AS Özcan, J Jordan-Sweet, EA Stach, J Tersoff, FM Ross, ... Nature 426 (6967), 641-645, 2003	234	2003
In-situ X-ray diffraction study of metal induced crystallization of amorphous silicon W Knaepen, C Detavernier, RL Van Meirhaeghe, JJ Sweet, C Lavoie Thin Solid Films 516 (15), 4946-4952, 2008	198	2008
Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition H Kim, C Cabral Jr, C Lavoie, SM Rossnagel Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002	172	2002
Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films C Lavoie, C Detavernier, C Cabral Jr, FM d’Heurle, AJ Kellock, ... Microelectronic engineering 83 (11-12), 2042-2054, 2006	148	2006
High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation D Deduytsche, C Detavernier, RL Van Meirhaeghe, C Lavoie Journal of applied physics 98 (3), 2005	139	2005
In situ x-ray diffraction study of metal induced crystallization of amorphous germanium W Knaepen, S Gaudet, C Detavernier, RL Van Meirhaeghe, JJ Sweet, ... Journal of Applied Physics 105 (8), 2009	129	2009
FinFET performance advantage at 22nm: An AC perspective M Guillorn, J Chang, A Bryant, N Fuller, O Dokumaci, X Wang, J Newbury, ... 2008 Symposium on VLSI Technology, 12-13, 2008	124	2008
Influence of Pt addition on the texture of NiSi on Si (001) C Detavernier, C Lavoie applied physics letters 84 (18), 3549-3551, 2004	121	2004
Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap SR Johnson, C Lavoie, MK Nissen, JT Tiedje US Patent 5,388,909, 1995	120	1995
Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy SR Johnson, C Lavoie, T Tiedje, JA Mackenzie Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993	116	1993
Two gates are better than one [double-gate MOSFET process] PM Solomon, KW Guarini, Y Zhang, K Chan, EC Jones, GM Cohen, ... IEEE circuits and devices magazine 19 (1), 48-62, 2003	115	2003
Triple-self-aligned, planar double-gate MOSFETs: devices and circuits KW Guarini, PM Solomon, Y Zhang, KK Chan, EC Jones, GM Cohen, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001	107	2001

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