| Structures and techniques for atomic layer deposition S Aoyama, RD Clark, SP Consiglio, M Hopstaken, H Jagannathan, ... US Patent 8,722,548, 2014 | 431 | 2014 |
| Method for forming a passivated metal layer H Yamasaki, K Nakamura, Y Kawano, GJ Leusink, FR McFeely, ... US Patent 7,189,431, 2007 | 304 | 2007 |
| Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing MS Ameen, G Leusink, JT Hillman US Patent 5,926,737, 1999 | 204 | 1999 |
| Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy E Bersch, M Di, S Consiglio, RD Clark, GJ Leusink, AC Diebold Journal of Applied Physics 107 (4), 2010 | 133 | 2010 |
| Method for characterizing the performance of an electrostatic chuck J Brcka, B Jones, G Leusink, JJ Long, B Oliver, C Tweed US Patent 6,853,953, 2005 | 67 | 2005 |
| Comparison of methods to determine bandgaps of ultrathin HfO2 films using spectroscopic ellipsometry M Di, E Bersch, AC Diebold, S Consiglio, RD Clark, GJ Leusink, T Kaack Journal of Vacuum Science & Technology A 29 (4), 2011 | 66 | 2011 |
| Selective chemical vapor deposition of tungsten using WF6 and GeH4 CA Van der Jeugd, GJ Leusink, G Janssen, S Radelaar Applied physics letters 57 (4), 354-356, 1990 | 39 | 1990 |
| Texturing and Tetragonal Phase Stabilization of ALD HfxZr1-xO2 Using a Cyclical Deposition and Annealing Scheme K Tapily, S Consiglio, RD Clark, R Vasić, E Bersch, J Jordan-Sweet, ... ECS Transactions 45 (3), 411, 2012 | 38 | 2012 |
| Low-pressure deposition of metal layers from metal-carbonyl precursors H Yamasaki, T Matsuda, A Gomi, T Hatano, M Sugiura, Y Kawano, ... US Patent 6,989,321, 2006 | 36 | 2006 |
| Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma T Nemoto, E Guidotti, G Leusink US Patent 6,992,011, 2006 | 35 | 2006 |
| Growth kinetics and inhibition of growth of chemical vapor deposited thin tungsten films on silicon from tungsten hexafluoride GJ Leusink, CR Kleijn, TGM Oosterlaken, G Janssen, S Radelaar Journal of applied physics 72 (2), 490-498, 1992 | 34 | 1992 |
| In situ sensitive measurement of stress in thin films GJ Leusink, TGM Oosterlaken, G Janssen, S Radelaar Review of scientific instruments 63 (5), 3143-3146, 1992 | 34 | 1992 |
| The evolution of growth stresses in chemical vapor deposited tungsten films studied by in situ wafer curvature measurements GJ Leusink, TGM Oosterlaken, G Janssen, S Radelaar Journal of applied physics 74 (6), 3899-3910, 1993 | 33 | 1993 |
| Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal SA Chew, H Yu, M Schaekers, S Demuynck, G Mannaert, E Kunnen, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 32 | 2017 |
| Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1− xZrxO2 gate dielectrics deposited by a … R Vasić, S Consiglio, RD Clark, K Tapily, S Sallis, B Chen, D Newby, ... Journal of Applied Physics 113 (23), 2013 | 32 | 2013 |
| High-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes RD Clark, S Consiglio, C Wajda, G Leusink, T Sugawara, H Nakabayashi, ... ECS Transactions 16 (4), 291, 2008 | 31 | 2008 |
| Physical and electrical effects of the Dep-Anneal-Dep-Anneal (DADA) process for HfO2 in high K/metal gate stacks RD Clark, S Aoyama, S Consiglio, G Nakamura, G Leusink ECS Transactions 35 (4), 815, 2011 | 30 | 2011 |
| Comparison of B2O3 and BN deposited by atomic layer deposition for forming ultrashallow dopant regions by solid state diffusion S Consiglio, RD Clark, D O'Meara, CS Wajda, K Tapily, GJ Leusink Journal of Vacuum Science & Technology A 34 (1), 2016 | 29 | 2016 |
| The impacts of ferroelectric and interfacial layer thicknesses on ferroelectric FET design N Tasneem, MM Islam, Z Wang, H Chen, J Hur, D Triyoso, S Consiglio, ... IEEE Electron Device Letters 42 (8), 1156-1159, 2021 | 28 | 2021 |
| Method of forming a metal layer using an intermittent precursor gas flow process H Yamasaki, T Matsuda, A Gomi, T Hatano, M Tachibana, K Matsuzava, ... US Patent 6,924,223, 2005 | 27 | 2005 |
