Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
656 2019 Reliability wearout mechanisms in advanced CMOS technologies AW Strong, EY Wu, RP Vollertsen, J Sune, G La Rosa, TD Sullivan, ...
John Wiley & Sons, 2009
280 2009 Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability EY Wu, J Suné
Microelectronics reliability 45 (12), 1809-1834, 2005
193 2005 IEEE Trans. Magn. EY Wu, JV Peske, DC Palmer
IEEE Trans. Magn 30 (6), 4254-4256, 1994
182 1994 On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques EY Wu, RP Vollertsen
IEEE Transactions on Electron Devices 49 (12), 2131-2140, 2002
174 2002 Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides E Wu, J Sune, W Lai, E Nowak, J McKenna, A Vayshenker, D Harmon
Solid-State Electronics 46 (11), 1787-1798, 2002
174 2002 Ultra-thin oxide reliability for ULSI applications EY Wu, JH Stathis, LK Han
Semiconductor Science and Technology 15 (5), 425, 2000
152 2000 Experimental evidence of T/sub BD/power-law for voltage dependence of oxide breakdown in ultrathin gate oxides EY Wu, A Vayshenker, E Nowak, J Sune, RP Vollertsen, W Lai, D Harmon
IEEE Transactions on Electron Devices 49 (12), 2244-2253, 2002
138 2002 Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides EY Wu, J Aitken, E Nowak, A Vayshenker, P Varekamp, G Hueckel, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
131 2000 Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ...
Applied Physics Letters 108 (1), 2016
129 2016 A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
128 2011 Challenges for accurate reliability projections in the ultra-thin oxide regime EY Wu, WW Abadeer, LK Han, SH Lo, GR Hueckel
1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999
120 1999 CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics EY Wu, EJ Nowak, A Vayshenker, WL Lai, DL Harmon
IBM Journal of Research and Development 46 (2.3), 287-298, 2002
116 2002 On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress … EY Wu, J Suñé, W Lai
IEEE Transactions on Electron Devices 49 (12), 2141-2150, 2002
110 2002 Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure E Wu, E Nowak, J Aitken, W Abadeer, LK Han, S Lo
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
100 1998 Hydrogen-Release Mechanisms in the Breakdown of Thin J Suñé, EY Wu
Physical review letters 92 (8), 087601, 2004
90 2004 Gate oxide breakdown under current limited constant voltage stress BP Linder, JH Stathis, RA Wachnik, E Wu, SA Cohen, A Ray, ...
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000
90 2000 Statistics of successive breakdown events in gate oxides J Sune, EY Wu
IEEE Electron Device Letters 24 (4), 272-274, 2003
77 2003 Weibull breakdown characteristics and oxide thickness uniformity EY Wu, EJ Nowak, RP Vollertsen, LK Han
IEEE Transactions on Electron Devices 47 (12), 2301-2309, 2000
76 2000 IEEE EDL E Wu, J Suñé
IEEE EDL 21 (7), 341-343, 2000
76 2000 