Borderline Magic Clustering: The Fabrication of Tetravalent Pb Cluster Arrays <?format ?>on SC Li, JF Jia, RF Dou, QK Xue, IG Batyrev, SB Zhang
Physical review letters 93 (11), 116103, 2004
317 2004 Equilibrium and adhesion of Nb/sapphire: The effect of oxygen partial pressure IG Batyrev, A Alavi, MW Finnis
Physical Review B 62 (7), 4698, 2000
210 2000 Ab initio calculations on the Al 2 O 3 (0001) surface I Batyrev, A Alavi, MW Finnis
Faraday Discussions 114, 33-43, 1999
172 1999 Breakdown of the band-gap-common-cation rule: The origin of the small band gap of InN SH Wei, X Nie, IG Batyrev, SB Zhang
Physical Review B 67 (16), 165209, 2003
138 2003 Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ...
Materials science forum 527, 935-948, 2006
91 2006 In-plane relaxation of Cu(111) and IG Batyrev, L Kleinman
Physical Review B 64 (3), 033410, 2001
83 2001 Tip size effect on the appearance of a STM image for complex surfaces: Theory versus experiment for YL Wang, HJ Gao, HM Guo, HW Liu, IG Batyrev, WE McMahon, SB Zhang
Physical Review B—Condensed Matter and Materials Physics 70 (7), 073312, 2004
81 2004 Effects of device aging on microelectronics radiation response and reliability DM Fleetwood, MP Rodgers, L Tsetseris, XJ Zhou, I Batyrev, S Wang, ...
Microelectronics Reliability 47 (7), 1075-1085, 2007
64 2007 Reactions of water molecules in silica-based network glasses IG Batyrev, B Tuttle, DM Fleetwood, RD Schrimpf, L Tsetseris, ...
Physical review letters 100 (10), 105503, 2008
59 2008 Magnetism of the V (001) surface: Contradictory results from pseudopotential and linearized augmented plane-wave calculations IG Batyrev, JH Cho, L Kleinman
Physical Review B 63 (17), 172420, 2001
44 2001 Hydrogen effects in MOS devices L Tsetseris, DM Fleetwood, RD Schrimpf, XJ Zhou, IG Batyrev, ...
Microelectronic engineering 84 (9-10), 2344-2349, 2007
43 2007 Hydrogen shuttling near Hf-defect complexes in Si∕ SiO2∕ HfO2 structures AG Marinopoulos, I Batyrev, XJ Zhou, RD Schrimpf, DM Fleetwood, ...
Applied Physics Letters 91 (23), 2007
37 2007 Performance, reliability, radiation effects, and aging issues in microelectronics–From atomic-scale physics to engineering-level modeling ST Pantelides, L Tsetseris, MJ Beck, SN Rashkeev, G Hadjisavvas, ...
Solid-State Electronics 54 (9), 841-848, 2010
35 2010 The effects of aging on MOS irradiation and annealing response MP Rodgers, DM Fleetwood, RD Schrimpf, IG Batyrev, S Wang, ...
IEEE transactions on nuclear science 52 (6), 2642-2648, 2005
35 2005 Effects of water on the aging and radiation response of MOS devices IG Batyrev, MP Rodgers, DM Fleetwood, RD Schrimpf, ST Pantelides
IEEE transactions on nuclear science 53 (6), 3629-3635, 2006
34 2006 Stabilization of pentazolate anions in the high-pressure compounds Na 2 N 5 and NaN 5 and in the sodium pentazolate framework NaN 5· N 2 M Bykov, E Bykova, S Chariton, VB Prakapenka, IG Batyrev, ...
Dalton Transactions 50 (21), 7229-7237, 2021
31 2021 Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling IG Batyrev, D Hughart, R Durand, M Bounasser, BR Tuttle, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 55 (6), 3039-3045, 2008
26 2008 5-7-5 line defects on WE McMahon, IG Batyrev, T Hannappel, JM Olson, SB Zhang
Physical Review B—Condensed Matter and Materials Physics 74 (3), 033304, 2006
25 2006 Dinitrogen as a Universal Electron Acceptor in Solid-State Chemistry: An Example of Uncommon Metallic Compounds Na3 (N2 )4 and NaN2 M Bykov, KR Tasca, IG Batyrev, D Smith, K Glazyrin, S Chariton, ...
Inorganic chemistry 59 (20), 14819-14826, 2020
22 2020 Density functional theory and evolution algorithm calculations of elastic properties of AlON IG Batyrev, DE Taylor, GA Gazonas, JW McCauley
Journal of Applied Physics 115 (2), 2014
22 2014 