Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges EP Gusev, V Narayanan, MM Frank
IBM Journal of Research and Development 50 (4.5), 387-410, 2006
388 2006 Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode C Dubourdieu, J Bruley, TM Arruda, A Posadas, J Jordan-Sweet, ...
Nature Nanotechnology 8 (10), 748, 2013
300 2013 A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates S Zafar, Y Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 23-25, 2006
290 2006 High- MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ...
IEEE Electron Device Letters 31 (4), 275-277, 2010
265 2010 Oxygen vacancies in high dielectric constant oxide-semiconductor films S Guha, V Narayanan
Physical review letters 98 (19), 196101, 2007
259 2007 Ultimate scaling of high-κ gate dielectrics: Higher-κ or interfacial layer scavenging? T Ando
Materials 5 (3), 478-500, 2012
217 2012 A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference M Le Gallo, R Khaddam-Aljameh, M Stanisavljevic, A Vasilopoulos, ...
Nature Electronics 6 (9), 680-693, 2023
159 2023 HERMES Core–A 14nm CMOS and PCM-based In-Memory Compute Core using an array of 300ps/LSB Linearized CCO-based ADCs and local digital processing R Khaddam-Aljameh, M Stanisavljevic, JF Mas, G Karunaratne, ...
2021 Symposium on VLSI Circuits, 1-2, 2021
141 2021 Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition K Lorenz, M Gonsalves, W Kim, V Narayanan, S Mahajan
Applied Physics Letters 77 (21), 3391-3393, 2000
134 2000 A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process X Chen, S Samavedam, V Narayanan, K Stein, C Hobbs, C Baiocco, W Li, ...
2008 symposium on vlsi technology, 88-89, 2008
132 2008 Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition V Narayanan, K Lorenz, W Kim, S Mahajan
Applied Physics Letters 78 (11), 1544-1546, 2001
131 2001 A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
128 2011 Fundamental aspects of HfO2 -based high-k metal gate stack reliability and implications on tinv -scaling E Cartier, A Kerber, T Ando, MM Frank, K Choi, S Krishnan, B Linder, ...
2011 International Electron Devices Meeting, 18.4. 1-18.4. 4, 2011
127 2011 Examination of flatband and threshold voltage tuning of HfO2∕ TiN field effect transistors by dielectric cap layers S Guha, VK Paruchuri, M Copel, V Narayanan, YY Wang, PE Batson, ...
Applied physics letters 90 (9), 2007
124 2007 High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing M Chudzik, B Doris, R Mo, J Sleight, E Cartier, C Dewan, D Park, H Bu, ...
2007 IEEE symposium on VLSI technology, 194-195, 2007
123 2007 Signal and noise extraction from analog memory elements for neuromorphic computing N Gong, T Idé, S Kim, I Boybat, A Sebastian, V Narayanan, T Ando
Nature communications 9 (1), 2102, 2018
119 2018 Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt -tuning dipoles with gate … T Ando, MM Frank, K Choi, C Choi, J Bruley, M Hopstaken, M Copel, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
116 2009 A flexible and fast PyTorch toolkit for simulating training and inference on analog crossbar arrays MJ Rasch, D Moreda, T Gokmen, M Le Gallo, F Carta, C Goldberg, ...
2021 IEEE 3rd international conference on artificial intelligence circuits …, 2021
113 2021 An analog-AI chip for energy-efficient speech recognition and transcription S Ambrogio, P Narayanan, A Okazaki, A Fasoli, C Mackin, K Hosokawa, ...
Nature 620 (7975), 768-775, 2023
112 2023 High-k/metal gate innovations enabling continued CMOS scaling MM Frank
2011 Proceedings of the European Solid-State Device Research Conference …, 2011
112 2011 
Takashi AndoIBM T. J. Watson Research CenterEmail yang diverifikasi di us.ibm.com
