Accuracy of electron counting using a 7‐junction electron pump MW Keller, JM Martinis, NM Zimmerman, AH Steinbach
Applied Physics Letters 69 (12), 1804-1806, 1996
463 1996 A capacitance standard based on counting electrons MW Keller, AL Eichenberger, JM Martinis, NM Zimmerman
Science 285 (5434), 1706-1709, 1999
313 1999 Science MW Keller, AL Eichenberger, JM Martinis, NM Zimmerman
Science 285, 1706, 1999
173 1999 Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor A Fujiwara, H Inokawa, K Yamazaki, H Namatsu, Y Takahashi, ...
Applied Physics Letters 88 (5), 2006
168 2006 Current quantization due to single-electron transfer in Si-wire charge-coupled devices A Fujiwara, NM Zimmerman, Y Ono, Y Takahashi
Applied physics letters 84 (8), 1323-1325, 2004
147 2004 Electrical conductivity of xenon at megabar pressures MI Eremets, EA Gregoryanz, VV Struzhkin, H Mao, RJ Hemley, N Mulders, ...
Physical review letters 85 (13), 2797, 2000
136 2000 Submicron gap capacitor for measurement of breakdown voltage in air E Hourdakis, BJ Simonds, NM Zimmerman
Review of scientific instruments 77 (3), 2006
115 2006 Excellent charge offset stability in a Si-based single-electron tunneling transistor NM Zimmerman, WH Huber, A Fujiwara, Y Takahashi
Applied Physics Letters 79 (19), 3188-3190, 2001
109 2001 Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors OD Jurchescu, BH Hamadani, HD Xiong, SK Park, S Subramanian, ...
Applied Physics Letters 92 (13), 2008
106 2008 Machine learning techniques for state recognition and auto-tuning in quantum dots SS Kalantre, JP Zwolak, S Ragole, X Wu, NM Zimmerman, MD Stewart Jr, ...
npj Quantum Information 5 (1), 6, 2019
93 2019 Formation of strain-induced quantum dots in gated semiconductor nanostructures T Thorbeck, NM Zimmerman
AIP Advances 5 (8), 2015
91 2015 Modulation of the charge of a single-electron transistor by distant defects NM Zimmerman, JL Cobb, AF Clark
Physical Review B 56 (12), 7675, 1997
85 1997 Electrical metrology with single electrons NM Zimmerman, MW Keller
Measurement Science and Technology 14 (8), 1237, 2003
72 2003 Uncertainty budget for the NIST electron counting capacitance standard, ECCS-1 MW Keller, NM Zimmerman, AL Eichenberger
Metrologia 44 (6), 505, 2007
68 2007 Magnetic field tuned energy of a single two-level system in a meso-scopic metal NM Zimmerman, B Golding, WH Haemmerle
Physical review letters 67 (10), 1322, 1991
66 1991 Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability NM Zimmerman, WH Huber, B Simonds, E Hourdakis, A Fujiwara, Y Ono, ...
Journal of Applied Physics 104 (3), 2008
60 2008 Microscopic Scatterer Displacements Generate the Resistance Noise of H in Pd NM Zimmerman, WW Webb
Physical review letters 61 (7), 889, 1988
58 1988 A seven-junction electron pump: design, fabrication, and operation MW Keller, JM Martinis, AH Steinbach, NM Zimmerman
IEEE transactions on instrumentation and measurement 46 (2), 307-310, 1997
55 1997 Electrically driven spin qubit based on valley mixing W Huang, M Veldhorst, NM Zimmerman, AS Dzurak, D Culcer
Physical Review B 95 (7), 075403, 2017
52 2017 Charge offset stability in tunable-barrier Si single-electron tunneling devices NM Zimmerman, BJ Simonds, A Fujiwara, Y Ono, Y Takahashi, H Inokawa
Applied Physics Letters 90 (3), 2007
52 2007