| The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2 Y Goh, S Jeon Nanotechnology 29 (33), 335201, 2018 | 178 | 2018 |
| Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode Y Goh, SH Cho, SHK Park, S Jeon Nanoscale 12 (16), 9024-9031, 2020 | 148 | 2020 |
| The influence of top and bottom metal electrodes on ferroelectricity of hafnia Y Lee, Y Goh, J Hwang, D Das, S Jeon IEEE Transactions on Electron Devices 68 (2), 523-528, 2021 | 140 | 2021 |
| Ultra-thin Hf0. 5Zr0. 5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization Y Goh, J Hwang, Y Lee, M Kim, S Jeon Applied Physics Letters 117 (24), 2020 | 129 | 2020 |
| Sub-60-mV/decade negative capacitance FinFET with sub-10-nm hafnium-based ferroelectric capacitor E Ko, H Lee, Y Goh, S Jeon, C Shin IEEE Journal of the Electron Devices Society 5 (5), 306-309, 2017 | 80 | 2017 |
| Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing Y Goh, S Jeon Applied Physics Letters 113 (5), 2018 | 71 | 2018 |
| Selector-less ferroelectric tunnel junctions by stress engineering and an imprinting effect for high-density cross-point synapse arrays Y Goh, J Hwang, M Kim, Y Lee, M Jung, S Jeon ACS applied materials & interfaces 13 (49), 59422-59430, 2021 | 59 | 2021 |
| Effect of forming gas high-pressure annealing on metal-ferroelectric-semiconductor hafnia ferroelectric tunnel junction J Hwang, Y Goh, S Jeon IEEE Electron Device Letters 41 (8), 1193-1196, 2020 | 59 | 2020 |
| Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering Y Goh, J Hwang, S Jeon ACS Applied Materials & Interfaces 12 (51), 57539-57546, 2020 | 54 | 2020 |
| Crystalline phase-controlled high-quality hafnia ferroelectric with RuO₂ electrode Y Goh, SH Cho, SHK Park, S Jeon IEEE Transactions on Electron Devices 67 (8), 3431-3434, 2020 | 50 | 2020 |
| Effect of insertion of dielectric layer on the performance of Hafnia ferroelectric devices J Hwang, Y Goh, S Jeon IEEE Transactions on Electron Devices 68 (2), 841-845, 2020 | 45 | 2020 |
| Flexible ferroelectric hafnia-based synaptic transistor by focused-microwave annealing H Joh, M Jung, J Hwang, Y Goh, T Jung, S Jeon ACS Applied Materials & Interfaces 14 (1), 1326-1333, 2021 | 42 | 2021 |
| Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions J Hwang, Y Goh, S Jeon Small 20 (9), 2305271, 2024 | 30 | 2024 |
| High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications Y Goh, J Hwang, M Kim, M Jung, S Lim, SO Jung, S and Jeon International Electron Devices Meeting (IEDM), 2021 | 27 | 2021 |
| Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing J Woo, Y Goh, S Im, JH Hwang, Y Kim, JH Kim, JP Im, SM Yoon, SE Moon, ... IEEE Electron Device Letters 41 (2), 232-235, 2019 | 27 | 2019 |
| Defects and charge-trapping mechanisms of double-active-layer In–Zn–O and Al–Sn–Zn–In–O thin-film transistors Y Goh, T Kim, JH Yang, JH Choi, CS Hwang, SH Cho, S Jeon ACS Applied Materials & Interfaces 9 (11), 9271-9279, 2017 | 21 | 2017 |
| First-order reversal curve diagrams for characterizing ferroelectricity of Hf0. 5Zr0. 5O2 films grown at different rates Y Goh, S Jeon Journal of Vacuum Science & Technology B 36 (5), 2018 | 18 | 2018 |
| Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier M Kim, Y Goh, J Hwang, S Jeon Applied Physics Letters 119 (26), 2021 | 17 | 2021 |
| A method of controlling the imprint effect in hafnia ferroelectric device H Shin, V Gaddam, Y Goh, Y Jeong, G Kim, Y Qin, S Jeon Applied Physics Letters 122 (2), 2023 | 14 | 2023 |
| Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process J Hwang, M Kim, M Jung, T Kim, Y Goh, Y Lee, S Jeon IEEE Transactions on Electron Devices 69 (6), 3439-3445, 2022 | 14 | 2022 |
